记忆力的记忆守恒理论
The Memory-Conservation Theory of Memristance
摘要：
忆阻器是近年来发现的一种基本的电路元件，在神经形态计算、非线性电子学和计算机存储器等领域具有重要的应用价值。它通常是使用蔡氏方程，其中缺乏材料的设备属性，或使用Strukov的唯象模型（或模型从它派生），偏离蔡氏的定义，由于缺乏一个磁通量项。它示出，通过建模的记忆保持离子电流（在Strukov忆阻器中的氧空位）的静磁学，忆阻器的磁通量可以被识别为从离子产生的通量。这导致了一种新的忆阻理论，由两个部分组成：1。一种记忆功能，它描述了离子感受到的忆阻如何影响位于器件“开启”部分的导电电子; 2.一种守恒函数，描述器件“关”部分的时变电阻。该模型允许在电子理论中直接结合离子，并首次将Chua的忆阻器的本构定义与器件材料特性联系起来。
英文摘要：
The memristor, the recently discovered fundamental circuit element, is of great interest for neuromorphic computing, nonlinear electronics and computer memory. It is usually modelled either using Chua's equations, which lack material device properties, or using Strukov's phenomenological model (or models derived from it), which deviates from Chua's definitions due to the lack of a magnetic flux term. It is shown that by modelling the magnetostatics of the memory-holding ionic current (oxygen vacancies in the Strukov memristor), the memristor's magnetic flux can be identified as the flux arising from the ions. This leads to a novel theory of memristance consisting of two components: 1. A memory function which describes how the memristance, as felt by the ions, affects the conducting electrons located in the `on' part of the device; 2. A conservation function which describes the time-varying resistance in the `off' part of the device. This model allows for a straight-forward incorporation of the ions within the electronic theory and relates Chua's constitutive definition of a memristor with device material properties for the first time.
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