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arXiv 2603.04773quant-ph
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用于硅基自旋量子比特的鲁棒复合双量子比特门

Robust composite two-qubit gates for silicon-based spin qubits

School of Physics, Anhui University(安徽大学物理学院)

Yang-Yang Yu, Guang-Hui Zhang, Yan-Jie He, Jun Wu, Xue-Ke Song, Dong Wang

AI总结:

基于哈密顿量逆工程,提出一种高保真度fSim门方案,通过结合几何和动态方法提升鲁棒性,实现快速构造复合双量子比特门。

摘要:

我们提出了一种基于哈密顿量逆工程的通用方法,以实现一组参数化的双量子比特门。该方法具有同时控制四个能级之间跃迁的独特优势,提供了一种更简单有效的构造复合双量子比特门的方法,其操作次数比传统方法更少。应用于硅双量子点(DQDs)时,可以仅用一个脉冲开关实现一步fSim门和B门。值得注意的是,该方法可以进一步与各种优化理论相结合以提高门性能。基于量子最优控制理论,我们开发了一种具有实验可行脉冲形状的高保真度fSim门方案,其平均门时间为50纳秒,在存在退相干和近似误差的情况下理论保真度为99.95%。通过结合几何量子门原理,我们提出了结合几何和动态的fSim门方案。数值模拟显示,这种混合方案在对抗系统误差方面比纯动态方法更具鲁棒性。我们的方法可以推广到任意的双量子比特物理系统,提供了一条可行的路径,用于快速且鲁棒地构造复合双量子比特门。

英文摘要:

We propose a universal approach based on Hamiltonian inverse engineering to realize a set of parameterized two-qubit gates. This method possesses unique advantages to simultaneous control of transitions among four energy levels, providing a simpler and effective way to construct composite two-qubit gates with fewer operations than traditional methods. Applied to silicon double quantum dots (DQDs), one can realize a one-step fSim gate and a B gate with only one pulse switch. Of note, the method can be further integrated with various optimization theories to enhance gate performance. Based on quantum optimal control theory, we develop a high-fidelity fSim gate scheme with experimentally feasible pulse shapes, featuring an average gate time of 50 ns and a theoretical fidelity of 99.95% in the presence of decoherence and approximation error. By incorporating geometric quantum gate principles, we propose a combined geometric and dynamic fSim gate scheme. Numerical simulations demonstrate that this hybrid scheme exhibits stronger robustness against systematic errors compared to the purely dynamic approach. Our method is generalizable to arbitrary two-qubit physical systems, offering a feasible pathway for rapidly and robustly constructing composite two-qubit gates.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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