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arXiv 2603.04500cond-mat.mes-hall
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Ge作为轨道电子平台:二维空穴气体中的巨量平面内轨道磁电效应

Ge as an orbitronic platform: giant in-plane orbital magneto-electric effect in a 2-dimensional hole gas

School of Physics, The University of New South Wales(新南威尔士大学物理学院)

James H. Cullen, Dimitrie Culcer

AI总结:

本文研究了Ge中二维空穴气体的巨量平面内轨道磁电效应,发现其OAM密度高达10^12 ħ/cm²,且比Rashba-Edelstein效应大一个数量级,为轨道电子器件的发展提供了新方向。

摘要:

随着对计算能力需求的增加,人们开始寻找高效且稳定的内存设备。这一总体动机推动了最近对轨道电子学的兴起,即利用载流子的轨道角动量来构建计算设备。轨道电子设备需要能够高效产生轨道角动量(OAM)的材料。在二维材料中,OAM可以通过轨道磁电效应(OME)来电生成。在本文中,我们报告了对二维空穴气体(2DHGs)中OME的计算。我们证明Ge空穴中的OME非常大,对于施加的电场约为10^4 V/m,OAM密度约为10^12 ħ/cm²。此外,我们发现OME比二维空穴气体中的 Rashba-Edelstein 效应大一个数量级。我们在二维空穴气体中计算的OME生成平面内对齐的OAM,这是由于重空穴和轻空穴状态之间的跃迁,这在该系统中是独特的。我们的结果使Ge以及其他p型半导体成为构建未来轨道电子设备的有力候选者。

英文摘要:

Increasing demand for computational power has initiated the hunt for energy efficient and stable memory devices. This is the overarching motivation behind the recent rise of \textit{orbitronics}, which looks to harness the orbital angular momentum of charge carriers in computing devices. Orbitronic devices require materials with efficient generation of orbital angular momentum (OAM). In 2D materials, OAM can be electrically generated via the orbital magneto-electric effect (OME). In this paper we report the calculation of the OME in 2 dimensional hole gases (2DHGs). We show that the OME in Ge holes is very large, for an applied electric field of the order $10^4$ V$/$m the OAM density is of the order $10^{12}$ $\hbar/$cm$^{2}$. Furthermore, we find the OME to be an order of magnitude larger than the Rashba-Edelstein effect in 2DHGs. The OME we calculated in 2DHGs generates OAM aligned in the plane and arises due to transitions between heavy and light hole states, which is unique to this system. Our results put Ge, as well as other p-type semiconductors, forward as strong candidates for building future orbitronic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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