室温范德华磁阻存储器：利用外尔半金属TaIrTe4中的轨道电流实现数据写入
Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal TaIrTe4
AI总结：
本研究以贝里曲率偶极子为关键因子，利用外尔半金属TaIrTe4的轨道电流实现TaIrTe4/Fe3GaTe2异质结构的无场垂直磁化翻转，达成室温全电控制的低功耗范德华磁阻存储器，为轨道电子学及磁存储技术提供新方向。
摘要：
电流诱导的面外磁化已被用于具有垂直磁各向异性的铁磁体的无场翻转。识别能高效将电荷电流转换为面外轨道或自旋极化电流的系统，对推进磁存储技术至关重要。本文引入贝里曲率偶极子作为关键评估因子，可通过非线性霍尔效应直接测量。在实验所用的外尔半金属TaIrTe4中，施加与贝里曲率偶极子平行的电流会产生面外轨道磁化，该磁化主导TaIrTe4/Fe3GaTe2异质结构中的无场垂直磁化翻转。值得注意的是，已实现室温下范德华磁阻存储器的全电控制，数据写入的临界电流密度低至2×10^6A/cm²。研究结果揭示了非线性霍尔效应与无场磁化翻转的关联，突显了贝里曲率偶极子在推进轨道电子学中的潜力。
英文摘要：
Current-induced out of plane magnetization has been utilized for field-free switching of ferromagnets with perpendicular magnetic anisotropy. Identifying systems capable of energy-efficiently converting charge currents into out of plane orbit- or spin-polarized currents is crucial for advancing magnetic memory technologies. Here we introduce the Berry curvature dipole as a key evaluation factor, directly measurable through nonlinear Hall effects. In the Weyl semimetal TaIrTe4 used in our experiments, applying a current parallel to the Berry curvature dipole results in out of plane orbital magnetization, which governs the field-free perpendicular magnetization switching in TaIrTe4/Fe3GaTe2 heterostructures. Notably, all-electric control of van der Waals magnetoresistive memory at room temperature has been achieved with a low critical current density 2x10^6A/cm2 for data writing. Our findings reveal the connection between nonlinear Hall effects and field-free magnetization switching, highlighting the potential of the Berry curvature dipole in advancing orbitronics.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
