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arXiv 2603.02450cond-mat.supr-concond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el
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电可控的超导记忆效应在UTe₂中

Electrically-controllable superconducting memory effect in UTe2

Cavendish Laboratory, University of Cambridge(剑桥大学卡文迪许实验室);National High Magnetic Field Laboratory(国家高磁场实验室);Department of Physics, Washington University in St. Louis(华盛顿大学圣路易斯分校物理系);Charles University, Faculty of Mathematics and Physics(查理大学数学与物理学院);School of Physics and Astronomy, Shanghai Jiao Tong University(上海交通大学物理与天文学院);School of Physical Sciences, University of Chinese Academy of Sciences(中国科学院大学物理科学学院)
Zheyu Wu, Hanyi Chen, Mengmeng Long, Daniel Shaffer, Dmitry V. Chichinadze, Andrej Cabala, Theodore I. Weinberger, Alexander J. Hickey, Jinxu Pu, Dave Graf, Vla… 展开作者

Zheyu Wu, Hanyi Chen, Mengmeng Long, Daniel Shaffer, Dmitry V. Chichinadze, Andrej Cabala, Theodore I. Weinberger, Alexander J. Hickey, Jinxu Pu, Dave Graf, Vladimir Sechovsky, Michal Valiska, Gang Li, Rui Zhou, F. Malte Grosche, Alexander G. Eaton

AI总结:

研究揭示UTe₂超导体在磁场作用下可实现电控记忆效应,通过调控电流脉冲改变超导态,展现低功耗超导记忆元件潜力。

摘要:

如果计算机由超导元件构成,其能效将远超传统电子设备。历史研究在扫描隧道显微镜和高温超导性的发展中取得突破。尽管最近在超导二极管和开关技术上有所进展,但利用超导平台实现可读写的记忆功能仍具挑战性。本文显示,UTe₂三重超导体单晶样品具有此类特性。通过施加磁场进入两个不同超导相之间的中间区域,发现直流脉冲可将材料推入和推出具有增强临界电流J_c的亚稳态。这种切换受刺激强度和持续时间控制,系统能长时间记住高或低J_c状态。这归因于两种不同涡流物种的竞争,它们可被扰动至非平衡高 disorder 配置,具有更强的钉扎力和更高J_c。而非依赖近邻磁性或半导体界面,这种记忆功能似乎是UTe₂固有的超导序属性。本发现强调了量子涡流物质的丰富复杂性,并展示了构建低功耗超导记忆元件的可行性。

英文摘要:

If a computer could be assembled from superconducting components, the energy efficiency would far surpass that of conventional electronics. Historic research efforts towards this goal yielded pivotal breakthroughs in the development and discovery of scanning tunnelling microscopy and high temperature superconductivity. Although recent strides have been taken in advancing superconducting diode and switching technologies, harnessing read/writeable memory functionality in superconducting platforms has remained challenging. Here we show that bulk single crystal specimens of the triplet superconductor candidate uranium ditelluride (UTe$_2$) possess such properties. Upon applying a magnetic field to access an intermediate regime straddling two distinct superconducting phases, we find that direct current pulses can push the material in and out of a metastable state possessing an enhanced critical current $J_c$. This switching is controllable by the strength and duration of the stimuli, with the system `remembering' whether it is in the high or low $J_c$ state for extended periods. We interpret this to be due to competition between two distinct vortex species, which can be perturbatively pushed into a non-equilibrium high-disorder configuration with stronger pinning forces and thus higher $J_c$. Rather than requiring proximate magnetic or semiconducting interfaces, this memory functionality appears to be an intrinsic property of UTe$_2$ rooted in the superconducting order itself. Our findings underscore the rich complexity of quantum vortex matter, and demonstrate the viability of engineering a new class of superconducting memory elements with ultralow-power switching.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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