2D ferroelectric narrow-bandgap semiconductor Wurtzite' type alpha-In2Se3 and its silicon-compatible growth
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences（中国科学院金属研究所沈阳材料科学国家实验室）；School of Materials Science and Engineering, University of Science and Technology of China（中国科学技术大学材料科学与工程学院）；School of Physical Science and Technology, Jiangsu Key Laboratory of Frontier Material Physics and Devices, Soochow University（苏州大学江苏省前沿材料物理与器件重点实验室物理科学与技术学院）；Collaborative Innovation Center of Extreme Optics, Shanxi University（山西大学极端光学协同创新中心）；Center for Quantum Matter, School of Physics, Zhejiang University（浙江大学物理学院量子物质研究中心）；Department of Mechanical Engineering, The University of Hong Kong（香港大学机械工程系）
二维范德华铁电材料，特别是α-In₂Se₃，因其适中的带隙和由偶极子锁定稳定化的强铁电性，已成为下一代信息存储技术的有吸引力的构建块。α-In₂Se₃可以采用扭曲的纤锌矿或纤锌矿结构；然而，纤锌矿相尚未得到实验验证，其大规模合成存在重大挑战。在这里，我们报告了一种结合脉冲激光沉积和化学气相沉积的原位传输生长方法，用于在SiO₂基底上直接生长厘米级纤锌矿型α-In₂Se₃薄膜。我们证明其是一种窄带隙铁电半导体，具有超过620 K的居里温度，可调带隙（0.8-1.6 eV）由带电域壁调节，以及1.3×10⁶ per cm的高光学吸收系数。此外，光吸收促进了突触器件的动态电导范围、线性和对称性，导致在神经形态计算的监督模式分类任务中达到92.3%的高识别精度。我们的发现展示了In₂Se₃的铁电多形性，突显了其在神经形态计算铁电突触中的潜力。
英文摘要：
2D van der Waals ferroelectrics, particularly alpha-In2Se3, have emerged as an attractive building block for next-generation information storage technologies due to their moderate band gap and robust ferroelectricity stabilized by dipole locking. alpha-In2Se3 can adopt either the distorted zincblende or wurtzite structures; however, the wurtzite phase has yet to be experimental-ly validated, and its large-scale synthesis poses significant challenges. Here, we report an in-situ transport growth of centimeter-scale wurtzite type alpha-In2Se3 films directly on SiO2 substrates using a process combining pulsed laser deposition and chemical vapor deposition. We demonstrate that it is a narrow bandgap ferroelectric semiconductor, featuring a Curie tem-perature exceeding 620 K, a tunable bandgap (0.8-1.6 eV) modulated by charged domain walls, and a large optical absorption coefficient of 1.3 times 10 powers 6 per centemeter. Moreover, light absorption promotes the dynamic conductance range, linearity, and symmetry of the synapse devices, leading to a high recognition accuracy of 92.3 percent in a supervised pattern classification task for neuromorphic computing. Our findings demonstrate a ferroelectric polymorphism of In2Se3, highlighting its potential in ferroelectric synapses for neuromorphic computing.
Light-facilitated ferroelectric switching in wurtzite crystals
Instituto Politécnico Nacional（国立理工学院）；Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)（巴塞罗那材料科学研究所（ICMAB-CSIC））；Universitat Politècnica de Catalunya（加泰罗尼亚理工大学）；Institució Catalana de Recerca i Estudis Avançats (ICREA)（加泰罗尼亚研究与高等研究学院（ICREA））
Enhanced Permittivity in Wurtzite ScAlN through Nanoscale Sc Clustering
Nova Research Inc（新研究公司）；U.S. Naval Research Laboratory（美国海军研究实验室）；Institute for NanoSystems Innovation (NanoSI), Northeastern University（东北大学纳米系统创新研究所）
Systematic comparison of approximations and functionals in first-principle calculations of aluminum-based III-V ferroelectric nitrides
University of Arkansas（阿肯色大学）；Guangdong Technion – Israel Institute of Technology（广东以色列理工学院）；Colorado School of Mines（科罗拉多矿业学院）；National Laboratory of the Rockies（落基山国家实验室）；Tel Aviv University（特拉维夫大学）；Université Paris-Saclay（巴黎萨克雷大学）；CentraleSupélec（中央苏佩雷勒高等电信学院）
Tip-Based Proximity Ferroelectric Switching and Piezoelectric Response in Wurtzite Multilayers
Frantsevich Institute for Problems in Materials Science, National Academy of Sciences of Ukraine（乌克兰国家科学院弗拉特谢维奇材料科学问题研究所）；Institute of Physics, National Academy of Sciences of Ukraine（乌克兰国家科学院物理研究所）；Department of Materials Science and Engineering, University of Tennessee（田纳西大学材料科学与工程系）；Department of Materials Science and Engineering, Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）
Origin and Reduction of Coercive Fields in ZnO-based Wurtzite Ferroelectrics
Bredesen Center for Interdisciplinary Research, University of Tennessee（田纳西大学布雷德森跨学科研究中心）；Center for Nanophase Materials Sciences, Oak Ridge National Laboratory（橡树岭国家实验室纳米材料科学中心）；Department of Mechanical Engineering, The Pennsylvania State University（宾夕法尼亚州立大学机械工程系）；Department of Materials Science and Engineering, The Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）
Ferroelectric 2D Antimony Oxides with Wide Bandgaps
采用进化算法结合第一性原理密度泛函理论（DFT）计算，预测了二氧化锑的第一个二维多晶型，即$γ$ -Sb $_2$ O $_4$和$δ$ -Sb $_2$ O $_4$.在$γ$ -Sb $_2$ O $_4$中发现面外铁电性，而在$δ$ -Sb $_2$ O $_4$中发现面内铁电性。预测的$γ$ $_2$ O和$δ$ $_2$ O $_4$相的偶极矩分别为36.63和14.96埃，表明它们可以作为制备铁电器件的良好候选物。计算结果表明，掺杂其他V族元素或施加应变可以降低开关势垒，从而促进开关。GW计算的结果表明，$γ$-Sb $_2$ O $_4$和$δ$ $_2$ O $_4$在其单层中的间接带隙分别为5.51和3.39 eV.拉曼光谱的计算，以方便预测结构的实验研究。面内和面外二维铁电性的存在以及大的带隙使得这种材料系统对于潜在的应用特别感兴趣。
Interaction between point defects and vertical inversion domain walls in wurtzite AlN
Université de Toulouse, CNRS, CEMES（图卢兹大学，法国国家科学研究中心，材料科学与化学研究所）；Smart Ferroic Materials Center, Physics Department and Institute for Nanoscience and Engineering, University of Arkansas（阿肯色大学智能铁电材料中心、物理系与纳米科学与工程研究所）；Université Paris-Saclay, CentraleSupélec, CNRS, Laboratoire SPMS（巴黎萨克雷大学，中央理工-高等电力学院，法国国家科学研究中心，SPMS实验室）；Department of Materials Science and Engineering, Tel Aviv University（特拉维夫大学材料科学与工程系）；CEMES-CNRS, Université de Toulouse（材料科学与化学研究所-法国国家科学研究中心，图卢兹大学）
An Automated Magnetron Sputtering Chamber for Ferroelectric Thin Film Deposition
Materials Research Institute, The Pennsylvania State University（宾夕法尼亚州立大学材料研究所）；Materials Science and Engineering, The Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）
Room-Temperature Noncolinear Ferroelectricity in van der Waals WO$_2$Cl$_2$ with a Wide Bandgap
Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University（东南大学物理学院量子材料与器件教育部重点实验室）；School of Advanced Materials and Nanotechnology, Xidian University（西安电子科技大学先进材料与纳米技术学院）；Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University（江苏师范大学物理与电子工程学院江苏省先进激光材料与器件重点实验室）；Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University（安徽大学物质科学与信息技术研究院安徽省信息材料与智能感知实验室）；College of Science, Hebei University of Science and Technology（河北科技大学理学院）；Quantum Innovation Centre (Q. InC), Agency for Science, Technology and Research (A*STAR)（新加坡科技研究局量子创新中心）；Chaotic Matter Science Research Center, Department of Materials, Metallurgy and Chemistry & Jiangxi Provincial Key Laboratory of Functional Molecular Materials Chemistry, Jiangxi University of Science and Technology（江西理工大学材料冶金化学系混沌物质科学研究中心江西省功能分子材料化学重点实验室）
Large Enhancements in Optical and Piezoelectric Properties in Ferroelectric Zn1-xMgxO Thin Films through Engineering Electronic and Ionic Anharmonicities
