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arXiv 2512.04029cond-mat.mtrl-sci
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各向异性声子动力学与在Actinide范德瓦尔半导体USe₃中的方向性传输

Anisotropic Phonon Dynamics and Directional Transport in Actinide van der Waals Semiconductor USe$_3$

University of Chemistry and Technology Prague(布拉格化工大学);Politecnico di Milano(米兰理工大学);Universitat de Valencia(瓦伦西亚大学);Masaryk University(马萨里克大学);University of Salzburg(萨尔茨堡大学);Charles University(查理大学)
Aljoscha Söll, Valentino Jadrisko, Sourav Dey, Nassima Benchtaber, Kalyan Sarkar, Borna Radatovic, Jan Luxa, Fedor Lipilin, Kseniia Mosina, Vojtech Kundrat, Jak… 展开作者

Aljoscha Söll, Valentino Jadrisko, Sourav Dey, Nassima Benchtaber, Kalyan Sarkar, Borna Radatovic, Jan Luxa, Fedor Lipilin, Kseniia Mosina, Vojtech Kundrat, Jakub Zalesak, Jana Vejpravova, Martin Zacek, Christoph Gadermaier, José J. Baldoví, Zdeněk Sofer

AI总结:

本研究通过实验和理论分析揭示了USe₃作为各向异性范德瓦尔半导体的特性,展示了其在方向性电荷传输和声子行为方面的独特表现,并为低维半导体的研究提供了新平台。

摘要:

方向依赖的电荷传输和光学响应是具有强平面各向异性的范德瓦尔(vdW)材料的特征。尽管过渡金属三硫化物(TMTCs)展示了这种行为,但更重的同系物仍鲜为人知。在本研究中,我们研究了USe₃作为一种各向异性vdW材料和已研究的TMTCs的更重同系物。我们通过偏振分辨拉曼光谱揭示了强平面各向异性,研究了应变诱导的声子模式位移,并通过场效应器件的传输测量量化了方向依赖的载流子迁移率。基于密度泛函理论的第一性原理计算证实了我们的发现,为我们的实验观测提供了理论基础。将USe₃视为TMTCs的actinide同系物,建立了一个探索结合强平面各向异性与f电子物理的低维半导体的平台。

英文摘要:

Direction-dependent charge transport and optical responses are characteristic of van der Waals (vdW) materials with strong in-plane anisotropy. While transition-metal trichalcogenides (TMTCs) exemplify this behavior, heavier analogs remain largely unexplored. In this study we examine USe$_3$ as an anisotropic vdW material and a heavier analog of the well-studied TMTCs. We reveal strong in-plane anisotropy using polarization-resolved Raman spectroscopy, investigate strain-induced shifts of phonon modes, and quantify direction-dependent charge-carrier mobility through transport measurements on field-effect devices. First-principles calculations based on density-functional theory corroborate our findings, providing a theoretical basis for our experimental observations. Casting USe$_3$ as an actinide analog of a TMTC establishes a platform for exploring low-dimensional semiconductors that combine strong in-plane anisotropy with f-electron physics.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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