电导率比方法对SnSe复杂能带结构及载流子散射机制的适用性
Applicability of Electrical Conductivity Ratio Method to Complicated Band Structure and the Carrier Scattering Mechanisms of SnSe
AI总结：
本文研究了ECR方法对SnSe复杂能带结构及载流子散射机制的适用性，发现其优于迁移率温度依赖法，能准确区分散射机制并随温度变化反映机制差异，为改善热电性能提供了途径。
摘要：
电导率比（ECR）方法可用于分析载流子散射机制（CSM），而无需进行磁性输运测量。本文讨论了ECR方法在分析复杂能带结构中的适用性。结合SnSe的热电性能，研究了利用理想单带输运模型的ECR方法研究具有复杂能带结构的半导体材料的CSM的可行性。结果表明，ECR方法不仅适用于此前报道的理想能带结构，也适用于复杂能带结构。利用理想单带模型的ECR方法对单晶SnSe的CSM分析结果，在非相变温度范围内与载流子迁移率的温度依赖性一致。由于各向异性晶体结构，单晶SnSe沿三个方向的CSM不同。位错散射（DS）与带电杂质散射（CIS）的区别在于，DS总是伴随极性光学声子散射（POP），如SnSe沿b轴方向的CSM。ECR方法比载流子迁移率温度依赖方法更容易区分CIS和DS。DS和POP可能是改善热电性能的途径之一，因为DS或POP的散射因子大于声学声子散射（APS）和合金散射（AS）。对于多晶SnSe，载流子散射机制随晶体结构和温度而变化。这表明，与载流子迁移率温度依赖方法相比，ECR方法能更好地反映载流子散射机制随温度的变化。
英文摘要：
The electrical conductivity ratio (ECR) method can be used to analyze carrier scattering mechanism (CSM) without the need of magenetic transport measurements. In this work, the applicability of the ECR method in the analysis of complex energy band structures is discussed. Combined with the thermoelectric properties of SnSe, the feasibility using ECR method of ideal single band transport model to study the CSM of semiconductor materials with complicated band structure is studied. The results indicate that ECR method is not only applicable to idea band structure as reported before but also to the complicated band structure. The analysis results of the CSM of single crystal SnSe by ECR method using ideal single-band model agree with the carrier mobility temperature dependence in the nonphase transition temperature range. The CSM along three direction of single crystal SnSe are different because of its anisotropic crystal structure. The difference between dislocation scattering (DS) and charged impurity scattering (CIS) is that DS is always accompanied by polar optical phonon scattering (POP), such as the CSM of SnSe along b axis direction. The difference between CIS and DS can be more easily distinguished by the ECR method than the carrier mobility temperature dependent method. DS and POP might be one of the approaches to improve thermoelectric property because the scattering factor for DS or POP is larger than that of acoustic phonon scattering (APS) and alloy scattering (AS). For polycrystalline SnSe, the carrier scattering mechanisms varies with the crystal structure and the temperature. This indicates that the ECR method can better reflect the variation of carrier scattering mechanisms with temperature compared to the carrier mobility temperature dependence method.
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