We present results of electronic band structure, Fermi surface and electron transport properties calculations in orthorhombic $n$- and $p$-type SnSe, applying Korringa-Kohn-Rostoker method and Boltzmann transport approach. The analysis accounted for temperature effect on crystallographic parameters in $Pnma$ structure as well as the phase transition to $CmCm$ structure at $T_c\sim 807 $K. Remarkable modifications of conduction and valence bands were notified upon varying crystallographic parameters within the structure before $T_c$, while the phase transition mostly leads to jump in the band gap value. The diagonal components of kinetic parameter tensors (velocity, effective mass) and resulting transport quantity tensors (electrical conductivity $σ$, thermopower $S$ and power factor PF) were computed in wide range of temperature ($15-900 $K) and, hole ($p-$type) and electron ($n-$type) concentration ($10^{17}-10^{21}$ cm$^{-3}$). SnSe is shown to have strong anisotropy of the electron transport properties for both types of charge conductivity, as expected for the layered structure. In general, $p$-type effective masses are larger than $n$-type ones. Interestingly, $p$-type SnSe has strongly non-parabolic dispersion relations, with the 'pudding-mold'-like shape of the highest valence band. The analysis of $σ$, $S$ and PF tensors indicates, that the inter-layer electron transport is beneficial for thermoelectric performance in $n$-type SnSe, while this direction is blocked in $p$-type SnSe, where in-plane transport is preferred. Our results predict, that $n$-type SnSe is potentially even better thermoelectric material than $p$-type one. Theoretical results are compared with single crystal $p$-SnSe measurements, and good agreement is found.
We report the synthesis of n-type SnSe$_{1-x}$ using a self-sacrificial, facile, solvo-thermal synthesis route. Electrical and thermal transport measurements suggest a low thermal conductivity and a significant thermopower in the temperature range 100 - 400\,K. We also propose the possibility of developing an all SnSe thermoelectric module.
Electron-crystal and phonon-glass are regarded as two essential factors for ideal thermoelectric materials, which require both an enhanced electronic transport and a depressed phononic transport. These two characteristics usually can not coexist in complete bulk semiconductors because of the strong interaction between electrons and phonons. Introducing nanostructures into bulk thermoelectric materials has long been applying to allow for diverse phonon scattering mechanisms to reduce lattice thermal conductivity while keeping the electrical conductivity intact. However, some two-dimensional mat…
The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust, isoelectronic, and share the same structure with black phosphorus. We measured the band structure of SnSe and found highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown a great promise.
Microwave plasma chemical vapor deposition (MPCVD) has been traditionally used to synthesize carbon-based materials such as diamonds, carbon nanotubes and graphene. Here we report that a rapid and catalyst-free growth of SnSe thin films can be achieved by using single-mode MPCVD with appropriate source materials. The analysis combing microscope images, X-ray diffraction patterns and lattice vibration modes shows that the grown thin films were composed of orthorhombic structured SnSe polycrystals mainly along the (111) direction. Further thermoelectric (TE) characterizations reveal that the pow…
The crystal structure of the thermoelectric material tin selenide has been investigated with angle-dispersive synchrotron x-ray powder diffraction under hydrostatic pressure up to 27 GPa. With increasing pressure, a continuous evolution of the crystal structure from the GeS type to the higher-symmetry TlI type was observed, with a critical pressure of 10.5(3) GPa. The orthorhombic high-pressure modification, beta'-SnSe, is closely related to the pseudo-tetragonal high-temperature modification at ambient pressure. The similarity between the changes of the crystal structure at elevated temperatu…
We theoretically investigate how each orbital and valley play a role for high thermoelectric performance of SnSe. In the hole-doped regime, two kinds of valence band valleys contribute to its transport properties: one is the valley near the U-Z line, mainly consisting of the Se-$p_z$ orbitals, and the other is the one along the $Γ$-Y line, mainly consisting of the Se-$p_y$ orbitals. Whereas the former valley plays a major role in determining the transport properties at room temperature, the latter one also offers comparable contribution and so the band structure exhibits multi-valley character…
Synchrotron-based angle-resolved photoemission spectroscopy is used to determine the electronic structure of layered SnSe, which was recently turned out to be a potential thermoelectric material. We observe that the top of the valence band consists of two nearly independent hole bands, whose tops differ by ~20 meV in energy, indicating the necessity of a multivalley model to describe the thermoelectric properties. The estimated effective masses are anisotropic, with in-plane values of 0.16-0.39 m$_0$ and an out-of-plane value of 0.71 m$_0$, where m$_0$ is the rest electron mass. Information of…
Recently SnSe compound was reported to have a peak thermoelectric figure-5 of-merit (ZT) of 2.62 at 923 K, but the ZT values at temperatures below 750 K are relatively low. In this work, the electronic structures of SnSe are calculated using the density functional theory, and the electro- and thermo-transport properties upon varying chemical potential (or carrier density) are evaluated by the semi-classic Boltzmann transport theory, showing that the calculated ZT values along the a10 and c-axes below 675 K are in agreement with reported values, but that along the b-axis can be as high as 2.57 …
Since 2014 the layered semiconductor SnSe in the high-temperature Cmcm phase is known to be the most efficient thermoelectric material. Making use of first-principles calculations we show that its vibrational and thermal transport properties are determined by huge non-perturbative anharmonic effects. We show that the transition from the Cmcm phase to the low-symmetry Pnma is a second-order phase transition driven by the collapse of a zone border phonon, whose frequency vanishes at the transition temperature. Our calculations show that the spectral function of the in-plane vibrational modes are…
The local atomic structure of SnSe was characterized across its orthorhmbic-to-orthorhombic structural phase transition using x-ray pair distribution function analysis. Substantial Sn off-centering distortions persist in the high symmetry high temperature phase, with symmetry different from that of ordered distortions below the transition. The analysis implies that the transition is neither order-disorder nor displacive, but rather a complex crossover where the character of coupling changes from 3D-like at low temperature to 2D-like at high temperature. Robust ferro-coupled SnSe intra-layer di…
We used density functional and many-body perturbation theory to calculate the quasiparticle band structures and electronic transport parameters of p-type SnSe both for the low-temperature Pnma and high-temperature Cmcm phases. The Pnma phase has an indirect band gap of 0.829 eV while the Cmcm has a direct band gap of 0.464 eV. Both phases exhibit multiple local band extrema within an energy range comparable to the thermal energy of carriers from the global extrema. We calculated the electronic transport coefficients for single-crystal and polycrystalline materials to understand previous experi…
We report time- and angle-resolved photoemission spectroscopy on SnSe which currently attracts great interest due to its extremely high thermoelectric performance. Laser-assisted photoemission signals are observed within $\pm$20 fs of the pump pulse arrival. Around 30-50 fs after the photoexcitation, the conduction band minima are not populated by the photoexcited electrons while the valence bands are considerably broadened. In going from 90 fs to 550 fs after the photoexcitation, the photoexcited carriers are decayed into the multiple conduction band minima. The observed conduction bands are …
Lifshitz transition, a change in Fermi surface topology, is likely to greatly influence exotic correlated phenomena in solids, such as high-temperature superconductivity and complex magnetism. However, since the observation of Fermi surfaces is generally difficult in the strongly correlated systems, a direct link between the Lifshitz transition and quantum phenomena has been elusive so far. Here, we report a marked impact of the pressure-induced Lifshitz transition on thermoelectric performance for SnSe, a promising thermoelectric material without strong electron correlation. By applying press…
SnSe is a layered material that currently holds the record for bulk thermoelectric efficiency. The primary determinant of this high efficiency is thought to be the anomalously low thermal conductivity resulting from strong anharmonic coupling within the phonon system. Here we show that the nature of the carrier system in SnSe is also determined by strong coupling to phonons by directly visualizing polaron formation in the material. We employ ultrafast electron diffraction and diffuse scattering to track the response of phonons in both momentum and time to the photodoping of free carriers acros…
Improving the thermoelectric efficiency is one of the greatest challenges in materials science. The recent discovery of excellent thermoelectric performance in simple orthorhombic SnSe crystal offers new promise in this prospect [Zhao et al. Nature 508, 373 (2014)]. By calculating the thermoelectric properties of orthorhombic IV-VI compounds GeS,GeSe,SnS,and SnSe based on the first-principles combined with the Boltzmann transport theory, we show that the Seebeck coefficient, electrical conductivity, and thermal conductivity of orthorhombic SnSe are in agreement with the recent experiment. Impo…
SnSe is a topical thermoelectric material with a low thermal conductivity which is linked to its unique crystal structure. We use low-temperature heat capacity measurements to demonstrate the presence of two characteristic vibrational energy scales in SnSe with Debye temperatures thetaD1 = 345(9) K and thetaD2 = 154(2) K. These hard and soft substructures are quantitatively linked to the strong and weak Sn-Se bonds in the crystal structure. The heat capacity model predicts the temperature evolution of the unit cell volume, confirming that this two-substructure model captures the basic thermal …
The reliable calculation of electronic structures and understanding of electrical properties depends on an accurate model of the crystal structure. Here, we have reinvestigated the crystal structure of the high-zT thermoelectric material tin selenide, SnSe, between 4 and 1000 K using high-resolution neutron powder diffraction. Symmetry analysis reveals the presence of four active structural distortion modes, one of which is found to be active over a relatively wide range of more than +/-200 K around the symmetry-breaking Pnma-Cmcm transition at 800 K. Density functional theory calculations on …
Excellent thermoelectric performance in the out-of-layer n-doped SnSe has been observed experimentally (Chang et al., Science 360, 778-783 (2018)). However, a first-principles investigation of the dominant scattering mechanisms governing all thermoelectric transport properties is lacking. In the present work, by applying extensive first-principles calculations of electron-phonon coupling associated with the calculation of the scattering by ionized impurities, we investigate the reasons behind the superior figure of merit as well as the enhancement of zT above 600 K in n-doped out-of-layer SnSe…
SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interests due to its excellent thermoelectric properties and potential device applications. Experimental electronic structure of both the valence and conduction bands is critical for understanding the effects of hole versus electron doping on the thermoelectric properties, and to further reveal possible change of the band gap upon doping. Here, we report the multivalley valence bands with a large effective mass on semiconducting SnSe crystals and reveal single-valle…
Identifying and understanding the mechanisms behind strong phonon-phonon scattering in condensed matter systems is critical to maximizing the efficiency of thermoelectric devices. To date, the leading method to address this has been to meticulously survey the full phonon dispersion of the material in order to isolate modes with anomalously large linewidth and temperature-dependence. Here we combine quantitative MeV ultrafast electron diffraction (UED) analysis with Monte Carlo based dynamic diffraction simulation and first-principles calculations to directly unveil the soft, anharmonic lattice…
Two-dimensional (2D) materials may have potential applications in thermoelectric devices. In this work, we systematically investigate the thermoelectric properties of orthorhombic group IV-VI monolayers $\mathrm{AB}$ (A=Ge and Sn; B=S and Se) by the first-principles calculations and semiclassical Boltzmann transport theory. The spin-orbit coupling (SOC) is included to investigate their electronic transport, which produces observable effects on power factor, especially for n-type doping. According to calculated $ZT$, the four monolayers exhibit diverse anisotropic thermoelectric properties, alt…
The binary compound SnSe exhibits record high thermoelectric performance, largely because of its very low thermal conductivity. The origin of the strong phonon anharmonicity leading to the low thermal conductivity of SnSe is investigated through first-principles calculations of the electronic structure and phonons. It is shown that a Jahn-Teller instability of the electronic structure is responsible for the high-temperature lattice distortion between the Cmcm and Pnma phases. The coupling of phonon modes and the phase transition mechanism are elucidated, emphasizing the connection with hybrid …
Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valley valence band structure and a quasi two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstra…
We conduct comprehensive investigations of both thermal and electrical transport properties of SnSe and SnS using first-principles calculations combined with the Boltzmann transport theory. Due to the distinct layered lattice structure, SnSe and SnS exhibit similarly anisotropic thermal and electrical behaviors. The cross-plane lattice thermal conductivity $κ_{L}$ is 40-60% lower than the in-plane values. Extremely low $κ_{L}$ is found for both materials because of high anharmonicity. It is suggested that nanostructuring would be difficult to further decrease $κ_{L}$ because of the short mean …
To gain insight into the peculiar temperature dependence of the thermoelectric material SnSe, we employ many-body perturbation theory and explore the influence of the electron-phonon interaction on its electronic and transport properties. We show that a lattice dynamics characterized by soft highly-polar phonons induces a large thermal enhancement of the Fröhlich interaction. We account for these phenomena in ab-initio calculations of the photoemission spectrum and electrical conductivity at finite temperature, unraveling the mechanisms behind recent experimental data. Our results reveal a com…
Directional design of functional materials with multi-objective constraints is a big challenge, whose performance and stability are determined by different physics factors entangled with each other complicatedly. In this work, we apply the multi-objective optimization based on the Pareto Efficiency and Particle-Swarm Optimization methods to design new functional materials directionally. As a demonstration, we achieve the thermoelectric design of 2D SnSe materials through the methods. We identify several novel metastable 2D SnSe structures with simultaneously lower free energy and better thermo…
SnSe is a promising thermoelectric material with record-breaking figure of merit, \textit{i.e., ZT}. As a semiconductor, optimal electrical dosage is the key challenge to maximize \textit{ZT} in SnSe. However, to date a comprehensive understanding of the electronic structure and most critically, the self-hole doping mechanism in SnSe is still absent. Here, we report the highly anisotropic electronic structure of SnSe investigated by both angle-resolved photoemission spectroscopy and quantum transport, in which a unique "\textit{pudding-mold}" shaped valence band with quasi-linear energy disper…
IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance.The multiple close-to-degenerate valence bands in the electronic band structure has been one of the key factors contributing to the high power factor and thus figure of merit in the SnSe single crystal. To date, there have been primarily theoretical calculations of this particular electronic band structure. In this paper, however, using angle-resolved photoemission spectroscopy, we perform a systematic investigation of the electronic structure of SnSe. We directly observe three predicted hole ba…
SnS and SnSe are isoelectronic materials with a common phase diagram. Recently, SnSe was found to be the most efficient intrinsic thermoelectric material in its high-temperature Cmcm phase above 800 K. Making use of first-principles calculations, here we show that the electronic and vibrational properties of both materials are very similar in this phase and, consequently, SnS is also expected to have a high thermoelectric figure of merit at high temperature in its Cmcm phase. In fact, the electronic power factor and lattice thermal conductivity are comparable for both materials, which ensures …
The layered semiconductor SnSe is one of the highest-performing thermoelectric materials known. We demonstrate, through a first-principles lattice-dynamics study, that the high-temperature Cmcm phase is a dynamic average over lower-symmetry minima separated by very small energetic barriers. Compared to the low-temperature Pnma phase, the Cmcm phase displays a phonon softening and enhanced three-phonon scattering, leading to an anharmonic damping of the low-frequency modes and hence the thermal transport. We develop a renormalisation scheme to quantify the effect of the soft modes on the calcul…
We found that the electronic transport property of SnSe single crystals was sensitive to oxygen content. Semiconducting SnSe single crystals were obtained by using Sn of grain form as a starting material while powder Sn resulted in metallic SnSe. X-ray photoelectron spectroscopy analysis revealed that the surfaces of raw Sn were oxidized, where the volume fraction was relatively low in grain Sn. This demonstrates that contamination of oxygen causes metallic behavior in grown SnSe single crystals.
Tin Selenide (SnSe) is one of the best thermoelectric materials reported to date. The possibility of growing few-layer SnSe helped boost the interest in this long-known, earth abundant material. Pristine SnSe in bulk, mono- and few-layer forms are reported to have indirect electronic bandgaps. Possible indirect-direct transition in SnSe is attractive for its optoelectronic-related applications. Based on the results from first principles Density Functional Theory (DFT) calculations, we carefully analyzed electronic band structures of bulk, and bilayer SnSe with various interlayer stackings. We …
The record-breaking thermoelectric performance of tin selenide (SnSe) has motivated the investigation of analogue compounds with the same structure. A promising candidate that emerged recently is germanium selenide (GeSe). Here, using extensive first-principles calculations of the hole-phonon and hole-impurity scattering, we investigate the thermoelectric transport properties of the orthorhombic phase of p-doped GeSe. We predict outstanding thermoelectric performance for GeSe over a broad range of temperatures due to its high Seebeck coefficients, extremely low Lorenz numbers, ultralow total t…
The group IV-VI compound SnSe, with an orthorhombic lattice structure, has recently attracted particular interest due to its unexpectedly low thermal conductivity and high power factor, showing great promise for thermoelectric applications. SnSe displays intriguing anisotropic properties due to the puckered low-symmetry in-plane lattice structure. Low-dimensional materials have potential advantages in improving the efficiency of thermoelectric conversion, due to the increased power factor and decreased thermal conductivity. A complete study of the optical and electrical anisotropies of SnSe na…
Efficient ab initio computational methods for the calculation of thermoelectric transport properties of materials are of great avail for energy harvesting technologies. The BoltzTraP code has been largely used to efficiently calculate thermoelectric coefficients. However, its current version that is publicly available is based only on the constant relaxation time (RT) approximation, which usually does not hold for real materials. Here, we extended the implementation of the BoltzTraP code by incorporating realistic k-dependent RT models of the temperature dependence of the main scattering proce…
By means of first-principles calculations, we explore systematically the geometric, electronic and piezoelectric properties of multilayer SnSe. We find that these properties are layer-dependent, indicating that the interlayer interaction plays an important role. With increasing the number of SnSe layers from 1 to 6, we observe that the lattice constant decreases from 4.27 $\mathring{A}$ to 4.22 $\mathring{A}$ along zigzag direction, and increases from 4.41 $\mathring{A}$ to 4.51 $\mathring{A}$ along armchair direction close to the bulk limit (4.21 $\mathring{A}$ and 4.52 $\mathring{A}$, respec…
Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically well-defined interface that will lead to high device performance. Using angle-resolved photoemission spectroscopy, a simple surface treatment was shown to allow the possible formation of such an interface. Ta adsorption on the surface of a p-doped SnSe shifts the valence band maximum towards higher binding energy due to the charge transfer from Ta to SnSe that is…
We use the modified Becke-Johnson exchange potential (mBJ) with the spin-orbit coupling effect (SOC) to study effects of biaxial strain and local constant potential on electronic structure of monolayer SnSe. Our results show the fundamental band gap size can be tuned via biaxial strain. Compressive strain (tensile strain) can narrow (enlarge) band gap, and compressive strain causes the transition from quasi-direct to indirect band gap. Moreover, considering that any tuning of electronic structure is realized by changing the periodic potential distribution in the crystalline, we directly add co…
The electronic structure and thermoelectric properties of SnSe are studied by first-principles methods. The inclusion of van der Waals dispersive corrections improves the agreement of structural parameters with experiments. The bands structure and projected density of states justify the macroscopic anisotropy exhibited by this system. An original methodology is used to estimate the chemical potential and the relaxation time for the electrical and thermal conductivities. Following this methodology, the Seebeck coefficient and thermal conductivity for single crystals and polycrystals are describ…
Anharmonic Phonon Renormalization and Defect Tolerance of the Thermoelectric Power Factor in Monolayer SnSe
Faculty of Physics and Physics Engineering, University of Science（物理与物理工程学院，科学大学）；Viet Nam National University Ho Chi Minh City（越南国立大学胡志明市分校）；Advanced Materials Technology Institute Vietnam National University Ho Chi Minh City（先进材料技术研究所，越南国立大学胡志明市分校）；University of Health Sciences (UHS), Viet Nam National University Ho Chi Minh City（卫生科学学院（UHS），越南国立大学胡志明市分校）；Frontier Research Institute for Interdisciplinary Sciences, Tohoku University（前沿跨学科学研究院，东北大学）
SnSe monolayer with orthorhombic Pnma GeS structure is an important two-dimensional (2D) indirect band gap material at room temperature. Based on first-principles density functional theory calculations, we present systematic studies on the electronic and magnetic properties of X (X = Ga, In, As, Sb) atoms doped SnSe monolayer. The calculated electronic structures show that Ga-doped system maintains semiconducting property while In-doped SnSe monolayer is half-metal. The As- and Sb- doped SnSe systems present the characteristics of n-type semiconductor. Moreover, all considered substitutional d…
SnSe monolayers experience a temperature induced two-dimensional Pnm2$_1 \to$ P4/nmm structural transformation precipitated by the softening of vibrational modes. The standard theoretical treatment of thermoelectricity---which relies on a zero temperature phonon dispersion and on a zero temperature electronic structure---is incapable of describing thermoelectric phenomena induced by structural transformations. Relying on structural data obtained from {\em ab initio} molecular dynamics calculations that is utilized in a non-standard way to inform of electronic and vibrational transport coeffici…
Thermoelectric materials create an electric potential when subject to a temperature gradient and vice versa hence they can be used to harvest waste heat into electricity and in thermal management applications. However, finding highly efficient thermoelectrics with high figures of merit, zT$\geq$1, is very challenging because the combination of high power factor and low thermal conductivity is rare in materials. Here, we use first-principles methods to analyze the thermoelectric properties of Li$_2$Sn$X_3$ ($X$=S,Se), a recently synthesized class of lithium fast-ion conductors presenting high t…
Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its superior thermoelectric performance. However, it's topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemission spectroscopy and ab-initio calculations, we systematically investigated the topological electronic structure of orthorhombic SnSe. By identifying the continuous gap in the valence bands due to the …
Tin chalcogenides (SnS, SnSe, and SnTe) are found to have improved thermoelectric properties upon the reduction of their dimensionality. Here we found the tilted AA + s stacked two-dimensional (2D) SnTe bilayer as the most stable phase among several stackings as predicted by the structural optimization and phonon transport properties. The carrier mobility and relaxation time are evaluated using the deformation potential theory, which is found to be relatively high due to the high 2D elastic modulus, low deformation potential constant, and moderate effective masses. The SnTe bilayer shows a hig…
The anharmonic phonon properties of SnSe in the Pnma phase were investigated with a combination of experiments and first-principles simulations. Using inelastic neutron scattering (INS) and nuclear resonant inelastic X-ray scattering (NRIXS), we have measured the phonon dispersions and density of states (DOS) and their temperature dependence, which revealed a strong, inhomogeneous shift and broadening of the spectrum on warming. First-principles simulations were performed to rationalize these measurements, and to explain the previously reported anisotropic thermal expansion, in particular the …
We use density functional theory calculations to study the electronic structure of epitaxial (111) interfaces of the topological crystalline insulators SnSe and SnTe with the magnetic insulator EuS and the non-magnetic insulator CaTe, respectively. We consider both interface slab models with a vacuum region and periodic heterostructures without vacuum. We find that gaps of 21 meV at the $Γ$ point and 9 meV at the M point arise in the topological state at the SnSe/EuS interface, due to the magnetic proximity effect, which breaks the time reversal symmetry. The surface state at $Γ$ is shifted be…
Pb$_{0.77}$Sn$_{0.23}$Se is a novel alloy of two promising thermoelectric materials PbSe and SnSe that exhibits a temperature dependent band inversion below 300 K. Recent work has shown that this band inversion also coincides with a trivial to nontrivial topological phase transition. To understand how the properties critical to thermoelectric efficiency are affected by the band inversion, we measured the broadband optical response of Pb$_{0.77}$Sn$_{0.23}$Se as a function of temperature. We find clear optical evidence of the band inversion at $160\pm15$ K, and use the extended Drude model to a…
There is growing interest in using ultrafast light pulses to drive functional materials into nonequilibrium states with novel properties. The conventional wisdom is that above gap photoexcitation behaves similarly to raising the electronic temperature and lacks the desired selectivity in the final state. Here we report a novel nonthermal lattice instability induced by ultrafast above-gap excitation in SnSe, a representative of the IV-VI class of semiconductors that provides a rich platform for tuning material functionality with ultrafast pulses due to their multiple lattice instabilities. The …
Promising High Temperature Thermoelectric Performance of Alkali Metal-based Zintl phases X$_2$AgY (X = Na, K; Y = Sb, Bi): Insights from First-Principles Studies
本研究利用第一性原理方法发现碱金属基Zintl相X$_2$AgY (X = Na, K; Y = Sb, Bi)因晶格非简谐性等具有极低晶格热导率，在700 K下展现出高达2.1的热电优值，为高性能热电材料设计提供了新方向。
Searching for the high-performance thermoelectric (TE) materials has always been a long-held dream in the thermoelectricity field. Recently, it is found in experiments that the largest figure of merit ZT of $2.6$ can be reached in SnSe crystals at 923 K and Cu2Se sample at 850 K, which arouses the enormous interest of seeking high-ZT materials. Based on first-principle calculations and Boltzman transport equation (BTE), we report in this letter that silver halides (AgCl and AgBr) in rocksalt structure have excellent TE performances. A superhigh ZT of about 7.0 at mid-temperature (~600K) is obt…
Due to fundamental interest and potential applications in quantum computation, tremendous efforts have been invested to study topological superconductivity. However, bulk topological superconductivity seems to be difficult to realize and its mechanism is still elusive. Several possible routes to induce topological superconductivity have been proposed, including proximity efforts, doping or pressurizing a topological insulator or semimetal. Among them, the pressurizing is considered to be a clean way to tune the electronic structures. Here we report the discovery of a pressure-induced topologic…
We have explored the mechanical, electronic, optical and thermoelectric properties of p-type half-Heusler compound BaAgP for the first time using density functional theory based calculations. The mechanical and dynamical stability of this compound is confirmed by studying the Born stability criteria and phonon dispersion curve, respectively. It is soft, ductile and elastically anisotropic. The atomic bonding along a-axis is stronger than that along c-axis. The calculated electronic structure reveals that the studied compound is an indirect band gap semiconductor. The analysis of charge density…
