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arXiv 2409.07342cond-mat.str-elcond-mat.mtrl-sci
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块体1T-ZrSe$_2$中掺杂可调的CDW相变

Doping Tunable CDW Phase Transition in Bulk 1T-ZrSe$_2$

Andreas Ørsted, Alessandro Scarfato, Céline Barreteau, Enrico Giannini, Christoph Renner

AI总结:

本文通过扫描隧道显微镜和光谱学研究,发现块体1T-ZrSe$_2$中将费米能级局部移入导带的原子杂质会触发CDW重构并在费米能级处打开能隙,为半导体TMDs中电子掺杂介导的CDW相变提供了局部理解。

摘要:

过渡金属硫族化物(TMDs)中可调的电子特性对于推进其在器件应用中的使用至关重要。在此,我们对半导体块体1T-ZrSe$_2$中掺杂诱导的电荷密度波(CDW)进行了全面的扫描隧道显微镜和光谱学研究。我们发现,将费米能级($E_F$)局部移入导带的原子杂质会触发CDW重构,同时在$E_F$处打开一个能隙。我们的发现为早期关于块体1T-ZrSe$_2$的光电子能谱和理论研究提供了新见解,并为在半导体TMDs中观察到的电子掺杂介导的CDW相变提供了局部理解。

英文摘要:

Tuneable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunnelling microscopy and spectroscopy study of a doping-induced charge density wave (CDW) in semiconducting bulk 1T-ZrSe$_2$. We find that atomic impurities which locally shift the Fermi level ($E_F$) into the conduction band trigger a CDW reconstruction concomitantly to the opening of a gap at $E_F$. Our findings shed new light on earlier photoemission spectroscopy and theoretical studies of bulk 1T-ZrSe$_2$, and provide a local understanding of the electron-doping mediated CDW transition observed in semiconducting TMDs.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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