Dynamics of ballistic photocurrents driven by Coulomb scattering
Molecular Foundry, Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室分子发现中心）；Quantum Simulations Group, Lawrence Livermore National Laboratory（劳伦斯利弗莫尔国家实验室量子模拟组）
Liang Z. Tan, Xavier Andrade, Sangeeta Rajpurohit, Alfredo A. Correa, Tadashi Ogitsu
First principles real-time time dependent density functional theory (rt-TDDFT) calculations reveal the existence of ballistic photocurrents generated by Coulomb scattering, which has not previously been considered as a mechanism for the bulk photovoltaic effect. With monolayer GeS as an example, it is predicted that ballistic currents can be comparable to shift currents under experimentally accessible conditions.
Ultrafast photocurrent experiments are performed on semiconducting, single-walled carbon nanotubes under a resonant optical excitation of their subbands. The photogenerated excitons are dissociated at large electric fields and the resulting transport of the charge carriers turns out to be ballistic. Thermionic emission processes to the contacts dominate the photocurrent. The charge current without laser excitation is well described by a Fowler-Nordheim tunneling. The time-averaged photocurrent changes polarity as soon as sufficient charge carriers are injected from the contacts, which can be e…
Understanding the carrier excitation and transport processes at the single-charge level plays a key role in quantum-dot-based solar cells and photodetectors. Here, we report on Coulomb-induced giant photocurrent enhancement of positive charged trions (\emph{X$^+$}) in a single self-assembled InAs/GaAs quantum dot embedded in an \emph{n-i-}Schottky device by high-resolution photocurrent (PC) spectroscopy. The Coulomb repulsion between the two holes in the \emph{X$^+$} increases the tunneling rate of the hole, and the remaining hole can be reused as the initial state to regenerate \emph{X$^+$} a…
We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n$^+$-i-n-n$^+$ graphene field-effect transistors (G-FET) might lead to a substantial Coulomb drag of the quasi-equilibrium electrons due the violation of the Galilean and Lorentz invariance in the systems with a linear electron dispersion. This effect can result in the S-shaped current-voltage characteristics (IVs). The resulting negative differential conductivity enables the hysteresis effects and current filamentation that can be used for the implementation of voltage switching d…
We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is associated with the Coulomb drag of the quasi-equilibrium electrons in the gated channel by the injected ballistic electrons resulting in a positive feedback between the amplified dragged electrons current and the injected current. The plasma excitations arise when the drag effect is sufficiently strong. The drag efficiency and the plasma frequency are determined by the quasi-equilibrium electrons Fermi energy (i.e.…
Quantum mechanics and Coulomb interaction dictate the behavior of small circuits. The thermal implications cover fundamental topics from quantum control of heat to quantum thermodynamics, with prospects of novel thermal machines and an ineluctably growing influence on nanocircuit engineering. Experimentally, the rare observations thus far include the universal thermal conductance quantum and heat interferometry. However, evidences for many-body thermal effects paving the way to markedly different heat and electrical behaviors in quantum circuits remain wanting. Here we report on the observatio…
Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function and decoherence of single electron wavepackets. Due to the effects of screening, none of these experiments were performed in a regime where Coulomb interactions were particularly strong. Here we expl…
We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in a wide range of gate voltages. With decreasing the Fermi level below the conduction band bottom, the current emerges, reaches a maximum, decreases, changes its sign close to the charge neutrality poin…
We investigate the influence of the chemical potential mismatch $Δ$ (different electron densities) on Coulomb drag between two parallel ballistic quantum wires. For pair collisions, the drag resistivity $ρ_{\rm D}(Δ)$ shows a peculiar anomaly at $Δ=0$ with $ρ_{\rm D}$ being finite at $Δ=0$ and vanishing at any nonzero $Δ$. The "bodyless" resonance in $ρ_{\rm D}(Δ)$ at zero $Δ$ is only broadened by processes of multi-particle scattering. We analyze Coulomb drag for finite $Δ$ in the presence of both two- and three-particle scattering within the kinetic equation framework, focusing on a Fokker-P…
DC photoelectrical currents can be generated purely as a non-linear effect in uniform media lacking inversion symmetry without the need for a material junction or bias voltages to drive it, in what is termed photogalvanic effect. These currents are strongly dependent on the polarization state of the radiation, as well as on topological properties of the underlying Fermi surface such as its Berry curvature. In order to study the intrinsic photogalvanic response of gapped graphene (GG), biased bilayer graphene (BBG), and hexagonal boron nitride (hBN), we compute the non-linear current using a pe…
Recently, the electron transport through a quasi-one dimensional (quasi-1D) electron gas was investigated experimentally as a function of the confining potential. We present a physical model for quantum ballistic transport of electrons through a short conduction channel, and investigate the role played by the Coulomb interaction in modifying the energy levels of two-electron states at low temperatures as the width of the channel is increased. In this regime, the effect of the Coulomb interaction on the two-electron states has been shown to lead to four split energy levels, including two anti-c…
We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated doping densities. First we extract the intrinsic gate capacitance of the device geometry from a device that shows Coulomb blockade at 13 mK with over 500 Coulomb peaks across a gate voltage range of 6 V indicating the formation of a single island in the entire nanowire channel. In two other devices, doped Si:P $4\times10^{19}\,\text{cm}^{-3}$ and $2\times10^{20}\,\text{cm}^{-3}$, we observe quantum …
We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due to the interband tunneling on the current-voltage characteristics and impedance of the p+-p-i-n-n+ graphene tunneling transistor structures (GTTSs). The drag leads to a current amplification in the gated n- and p-regions and a positive feedback between the amplified dragged current and the injected tunneling current. A sufficiently strong drag can result in the negative real part of the GTTS impedance enabling the pla…
We recall theoretical studies on transient transport through interacting mesoscopic systems. It is shown that a generalized master equation (GME) written and solved in terms of many-body states provides the suitable formal framework to capture both the effects of the Coulomb interaction and electron--photon coupling due to a surrounding single-mode cavity. We outline the derivation of this equation within the Nakajima-Zwanzig formalism and point out technical problems related to its numerical implementation for more realistic systems which can neither be described by non-interacting two-level …
