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arXiv 2408.01490hep-thcond-mat.str-el
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缺陷电荷、有能边界条件与对称TFT

Defect Charges, Gapped Boundary Conditions, and the Symmetry TFT

Mathematical Institute, University of Oxford(牛津大学数学研究所)

Christian Copetti

AI总结:

本文提出一种高效表征缺陷算子在广义对称下高代表示(高电荷)的方法,通过Symmetry TFT框架,将缺陷的高电荷与有能边界条件一一对应,并探讨其在异常体理论中的应用。

摘要:

我们提供了一种简洁且计算强大的方法,用于表征缺陷算子在广义对称下更高表示(更高电荷)。通过Symmetry TFT $\mathcal{Z}(\mathcal{C})$框架,对于一个码维为p的缺陷$\mathscr{D}$,这些表示(电荷)与SymTFT $\mathcal{Z}(\mathcal{C})$在流形$Y = Σ_{d-p+1} \times S^{p-1}$上的有能边界条件一一对应,并可通过维度约简高效描述。我们探讨了该构造的多种应用,包括异常体理论中对称缺陷的宿主情况。这将't Hooft异常与无对称边界条件的联系扩展到任意码维的缺陷。最后,我们描述了一些(3 + 1)d对称对偶性表面电荷的性质,这应与规范理论中Gukov-Witten算子的研究相关。

英文摘要:

We offer a streamlined and computationally powerful characterization of higher representations (higher charges) for defect operators under generalized symmetries, employing the powerful framework of Symmetry TFT $\mathcal{Z}(\mathcal{C})$. For a defect $\mathscr{D}$ of codimension p, these representations (charges) are in one-to-one correspondence with gapped boundary conditions for the SymTFT $\mathcal{Z}(\mathcal{C})$ on a manifold $Y = Σ_{d-p+1} \times S^{p-1}$, and can be efficiently described through dimensional reduction. We explore numerous applications of our construction, including scenarios where an anomalous bulk theory can host a symmetric defect. This generalizes the connection between 't Hooft anomalies and the absence of symmetric boundary conditions to defects of any codimension. Finally we describe some properties of surface charges for (3 + 1)d duality symmetries, which should be relevant to the study of Gukov-Witten operators in gauge theories.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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