单电子灵敏读出（SiSeRO）器件的亚电子噪声性能演示
Demonstrating sub-electron noise performance in Single electron Sensitive Readout (SiSeRO) devices
AI总结：
本文演示了SiSeRO器件的亚电子噪声灵敏度，通过优化的RNDR测量装置实现了更低的等效噪声电荷，为下一代天文X射线望远镜的有源像素传感器阵列发展铺平道路。
摘要：
单电子灵敏读出（SiSeRO）是一种新型的片上电荷检测技术，原则上可以提供比传统电荷耦合器件（CCD）读出电路显著更高的响应度和改善的噪声性能。SiSeRO由MIT Lincoln Laboratory开发，使用一个p-MOSFET晶体管，在晶体管沟道下方具有耗尽背栅区域；当电荷被转移到背栅区域时，晶体管电流被调制。利用我们的第一代SiSeRO器件，我们之前实现了约800 pA/electron的响应度，4.5 electrons RMS的等效噪声电荷（ENC），以及在5.9 keV下130 eV的半高全宽（FWHM）光谱分辨率，读出速度为625 Kpixel/s，探测器温度为250 K。重要的是，由于电荷信号不受SiSeRO读出过程影响，我们还能够实现重复非破坏性读出（RNDR），从而获得改善的ENC性能。在本文中，我们利用为RNDR测量优化的增强型测试装置，展示了这些器件的亚电子噪声灵敏度，该装置具有出色的温度控制、改进的读出电路和先进的数字滤波技术。我们目前正在制造具有更高灵敏度和RNDR优化放大器设计的新SiSeRO探测器，这将有助于未来使SiSeRO技术成熟，并最终引领开发在每个像素上使用灵敏SiSeRO放大器的有源像素传感器（APS）阵列。具有亚电子灵敏度和快速读出的有源像素器件为需要快速、低噪声百万像素成像仪的下一代大面积天文X射线望远镜提供了一个令人兴奋的选择。
英文摘要：
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD) readout circuitry. The SiSeRO, developed by MIT Lincoln Laboratory, uses a p-MOSFET transistor with a depleted back-gate region under the transistor channel; as charge is transferred into the back gate region, the transistor current is modulated. With our first generation SiSeRO devices, we previously achieved a responsivity of around 800 pA per electron, an equivalent noise charge (ENC) of 4.5 electrons root mean square (RMS), and a full width at half maximum (FWHM) spectral resolution of 130 eV at 5.9 keV, at a readout speed of 625 Kpixel/s and for a detector temperature of 250 K. Importantly, since the charge signal remains unaffected by the SiSeRO readout process, we have also been able to implement Repetitive Non-Destructive Readout (RNDR), achieving an improved ENC performance. In this paper, we demonstrate sub-electron noise sensitivity with these devices, utilizing an enhanced test setup optimized for RNDR measurements, with excellent temperature control, improved readout circuitry, and advanced digital filtering techniques. We are currently fabricating new SiSeRO detectors with more sensitive and RNDR-optimized amplifier designs, which will help mature the SiSeRO technology in the future and eventually lead to the pathway to develop active pixel sensor (APS) arrays using sensitive SiSeRO amplifiers on each pixel. Active pixel devices with sub-electron sensitivity and fast readout present an exciting option for next generation, large area astronomical X-ray telescopes requiring fast, low-noise megapixel imagers.
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