AI 中文总结
研究针对高灵敏度SiSeRO CCD和有源像素传感器的输出级设计优化。通过模拟优化传感晶体管及其内部栅极几何结构提升噪声和速度性能，目标是结合两者优势开发新传感器，还讨论了器件模拟框架及第一代器件设计参数优化。
AI 中文摘要
单电子敏感读出（SiSeRO）技术是为满足未来X射线和光学天文望远镜对快速、低噪声、百万像素光谱成像仪的需求而设计的新型器件。第一代SiSeRO - CCD原型实现了每电子700 - 800 pA的电荷/电流转换增益、约3.5电子均方根（RMS）的等效噪声电荷（ENC）以及在5.9 keV时约130 eV的半高宽（FWHM）能量分辨率。利用重复无损读出（RNDR），在10 kpix/s读出速度下实现了亚电子噪声性能。本文展示了下一代SiSeRO CCD输出级的器件模拟结果，还旨在开发结合CCD和APS优势的SiSeRO有源像素传感器，讨论了器件模拟框架和第一代SiSeRO器件的设计参数优化。
英文摘要
The Single electron Sensitive Read Out (SiSeRO) technology is a new device class designed to support the needs of future X-ray and optical astronomical telescopes that will require fast, low-noise, megapixel spectro-imagers. Developed at MIT Lincoln Laboratory, in collaboration with Stanford University and MIT, the first generation SiSeRO-CCD (charge-coupled device) prototypes achieved a charge/current conversion gain of 700$-$800 pA per electron, an equivalent noise charge (ENC) of around 3.5 electrons root mean square (RMS), and a full width half maximum (FWHM) energy resolution of approximately 130 eV at 5.9 keV at a readout speed of 625 kpix/s. Utilizing Repetitive Non-Destructive Readout (RNDR), these same devices also demonstrated sub-electron noise performance (ENC$<$0.5 electrons RMS) at a readout speed of 10 kpix/s. We present the results of device simulations for next-generation SiSeRO CCD output stages that optimize the sensing transistor and its internal gate geometry to enhance noise and speed performance. Further, the goal is to develop a SiSeRO active pixel sensor (APS) that combines the proven X-ray performance of CCDs with the architectural advantages of an APS. Enabling this requires substantial design updates, for example, incorporating two SiSeRO amplifiers side by side on each pixel and shuffling the charge between them to support RNDR. We discuss our device simulation framework and design parameter optimization in the first-generation SiSeRO devices.
CommentsTo appear in SPIE Astronomical Telescopes and Instrumentation 2026 proceedings
