下一代埋沟道p-MOSFET SiSeRO的改进噪声性能
Improved noise performance from the next-generation buried-channel p-Mosfet SiSeROs
AI总结：
本研究报道了首款埋沟道SiSeRO器件，通过改进晶体管结构将等效噪声电荷从15个电子降至4.5个电子RMS，在5.9 keV下能量分辨率达132 eV，为下一代天文X射线望远镜提供了高性能成像技术。
摘要：
单电子灵敏读出（SiSeRO）是一种用于电荷耦合器件（CCD）图像传感器的新型片上电荷检测输出级。该技术由麻省理工学院林肯实验室开发，采用具有晶体管沟道下方耗尽型内部栅极的p-MOSFET晶体管。晶体管源漏电流通过电荷转移至内部栅极进行调制。在斯坦福大学，我们开发了一种基于片上晶体管漏电流的读出模块来表征该器件。在我们早期的工作中，我们表征了多个首代SiSeRO原型，其MOSFET晶体管沟道位于表面层，获得了约15个电子均方根（RMS）的等效噪声电荷（ENC）。在本工作中，我们研究了首个埋沟道SiSeRO。我们实现了显著改进的噪声性能，在625 kpixel/s的读出速度下，等效噪声电荷约为4.5个电子均方根（RMS），在5.9 keV下能量分辨率半高全宽（FWHM）为132 eV。我们还讨论了如何使用数字滤波技术进一步改善SiSeRO的噪声性能。额外的测量和器件模拟对于进一步成熟SiSeRO技术至关重要。这种新型器件类别为需要快速、低噪声、抗辐射百万像素成像器且具有中等光谱分辨率的下一代天文X射线望远镜提供了一项令人兴奋的新技术。
英文摘要：
The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. In our earlier work, we characterized a number of first prototype SiSeROs with the MOSFET transistor channels at the surface layer. An equivalent noise charge (ENC) of around 15 electrons root mean square (RMS) was obtained. In this work, we examine the first buried-channel SiSeRO. We have achieved substantially improved noise performance of around 4.5 electrons root mean square (RMS) and a full width half maximum (FWHM) energy resolution of 132 eV at 5.9 keV, for a readout speed of 625 kpixel/s. We also discuss how digital filtering techniques can be used to further improve the SiSeRO noise performance. Additional measurements and device simulations will be essential to further mature the SiSeRO technology. This new device class presents an exciting new technology for the next-generation astronomical X-ray telescopes requiring fast, low-noise, radiation-hard megapixel imagers with moderate spectroscopic resolution.
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