通过非原位氮化物薄膜实现的高结晶拓扑绝缘体-超导体异质结构的弹性生长
Resilient Growth of Highly Crystalline Topological Insulator-Superconductor Heterostructure Enabled by Ex-situ Nitride Film
AI总结：
本文提出用难熔TiN（111）作为超导层生长高结晶拓扑绝缘体-超导体异质结构，该方法无需原位解理或生长，TiN表面抗污染性强，可支持Bi2Se3可回收生长，为实用拓扑量子比特器件的实现铺平道路。
摘要：
高结晶且易于实现的拓扑绝缘体-超导体（TI-SC）异质结构对于实用拓扑量子比特器件的发展至关重要。TI-SC异质结构的最佳超导层应对外部污染具有高度弹性，并在结构上与拓扑绝缘体兼容。在本研究中，我们通过展示使用难熔TiN（111）作为超导层生长高结晶TI-SC异质结构，为这一挑战提供了解决方案。该方法可以消除对原位解理或生长的需求。更重要的是，TiN表面在空气暴露期间对污染表现出高弹性，这一点通过Bi2Se3的成功可回收生长得到了证明。我们的研究结果表明，基于氮化物薄膜的TI-SC异质结构与器件制造技术兼容，为未来实现实用拓扑量子比特器件铺平了道路。
英文摘要：
Highly crystalline and easily feasible topological insulator-superconductor (TI-SC) heterostructures are crucial for the development of practical topological qubit devices. The optimal superconducting layer for TI-SC heterostructures should be highly resilient against external contaminations and structurally compatible with TIs. In this study, we provide a solution to this challenge by showcasing the growth of a highly crystalline TI-SC heterostructure using refractory TiN (111) as the superconducting layer. This approach can eliminate the need for in-situ cleaving or growth. More importantly, the TiN surface shows high resilience against contaminations during air exposure, as demonstrated by the successful recyclable growth of Bi2Se3. Our findings indicate that TI-SC heterostructures based on nitride films are compatible with device fabrication techniques, paving a path to the realization of practical topological qubit devices in the future.
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