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arXiv 2404.15465cond-mat.mtrl-sci
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基于机器学习原子间势预测金属-金刚石界面的热边界电导

Thermal boundary conductance of metal diamond interfaces predicted by machine learning interatomic potentials

Khalid Zobaid Adnan, Mahesh R. Neupane, Tianli Feng

AI总结:

本研究开发机器学习原子间势,用非平衡分子动力学预测多种金属-金刚石界面的热边界电导,揭示传统模型的误差来源及TBC的关键影响因素,为金刚石基器件热管理提供参考。

摘要:

金属-金刚石界面的热边界电导(TBC)在未来基于金刚石的超宽禁带半导体器件的热管理中发挥着关键作用。分子动力学是预测TBC的一种成熟方法,但受限于缺乏描述金属-金刚石界面的可靠势函数。在本研究中,我们报道了机器学习原子间势的开发,并利用非平衡分子动力学预测了几种具有技术应用前景的金属-金刚石界面的TBC。经过量子校正后,Al、Zr、Mo和Au-金刚石界面的预测TBC分别约为316、88、52和55 MW/m²K。对应的热边界电阻分别等效于0.8 μm厚的Al、1.4 μm厚的Mo、0.3 μm厚的Zr和5.3 μm厚的Au的热阻。我们还发现,传统的简单模型,如声学失配模型和漫射失配模型,即便纳入了来自第一性原理的全频带声子色散,也会大幅误估TBC值,因为这些模型无法包含非弹性透射以及界面结构和成键细节。金属-金刚石界面经量子校正的TBC值与金属的量子校正声子比热(而非金刚石的比热)具有良好的相关性。此外,我们对这些体系的德拜温度和弹性模量的对比分析表明,德拜温度与TBC的相关性强于弹性模量。这些较低的TBC值需要在未来基于金刚石的半导体器件中加以考虑。

英文摘要:

Thermal boundary conductance (TBC) across metal diamond interfaces plays a critical role in the thermal management of future diamond based ultrawide bandgap semiconductor devices. Molecular dynamics is a sophisticated method to predict TBC but is limited by the lack of reliable potential describing metal diamond interfaces. In this work, we report the development of machine learning interatomic potentials and the prediction of TBCs of several technologically promising metal diamond interfaces using nonequilibrium molecular dynamics. The predicted TBCs of Al, Zr, Mo, and Au-diamond interfaces are approximately 316, 88, 52, and 55 MW/m2K, respectively, after quantum corrections. The corresponding thermal boundary resistances are equivalent to 0.8 μm thick of Al, 1.4 μm Mo, 0.3 μm Zr, and 5.3 μm Au, respectively. We also find that the conventional simple models, such as the acoustic mismatch model and diffuse mismatch model, even including the full-band phonon dispersion from first principles, largely misestimate the TBC values because of their inability to include inelastic transmission as well as interfacial structural and bonding details. The quantum-corrected TBC values for the metal diamond interfaces correlate well with the quantum corrected phonon specific heat of metals, instead of diamond. Additionally, our comparative analysis of Debye temperature and elastic modulus in these systems reveals that the former parameter correlates more strongly with the TBC than the latter. These low TBC values need to be considered in future diamond based semiconductor devices.

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