Number Series of Atoms, Interatomic Bonds and Interface Bonds Defining Zinc-Blende Nanocrystals as Function of Size, Shape and Surface Orientation: Analytic Tools to Interpret Solid State Spectroscopy Data
Semiconductor nanocrystals (NCs) experience stress and charge transfer by embedding materials or ligands and impurity atoms. In return, the environment of NCs experiences a NC stress response which may lead to matrix deformation and propagated strain. Up to now, there is no universal gauge to evaluate the stress impact on NCs and their response as a function of NC size $d_{\mathrm{NC}}$. I deduce geometrical number series as analytical tools to obtain the number of NC atoms $N_{\mathrm{NC}}(d_{\mathrm{NC}}[i])$, bonds between NC atoms $N\mathrm{_{bnd}}(d_{\mathrm{NC}}[i])$ and interface bonds $N\mathrm{_{IF}}(d_{\mathrm{NC}}[i])$ for seven high symmetry zinc-blende (zb) NCs with low-index faceting: {001} cubes, {111} octahedra, {110} dodecahedra, {001}-{111} pyramids, {111} tetrahedra, {111}-{001} quatrodecahedra and {001}-{111} quadrodecahedra. The fundamental insights into NC structures revealed here allow for major advancements in data interpretation and understanding of zb- and diamond-lattice based nanomaterials. The analytical number series can serve as a standard procedure for stress evaluation in solid state spectroscopy due to their deterministic nature, easy use and general applicability over a wide range of spectroscopy methods as well as NC sizes, forms and materials.
Developing a valence force field model for wurtzite semiconductors by exploiting similarities with [111]-oriented zinc blende systems: The case of wurtzite boron nitride, III-N materials and (B,In,Ga)N alloys
We employ first-principles techniques tailored to properly describe semiconductors (modified Becke-Johnson potential added to the exchange-correlation functional), to obtain the electronic band structures of both the zinc-blende and wurtzite phases of GaAs, GaSb, InAs, and InSb. We extract the spin-orbit fields for the relevant valence and conduction bands at zone center, by fitting the spin-splittings resulting from the lack of space inversion symmetry of these bulk crystal structures, to known functional forms---third-order polynomials. We also determine the orientations of the spin-orbit ve…
The structural, electronic, dielectric and vibrational properties of zinc-blende (ZB) InAs were studied within the framework of density functional theory (DFT) by employing local density approximation and norm-conserving pseudopotentials. The optimal lattice parameter, direct band gap, static dielectric constant, phonon frequencies and Born effective charges calculated by treating In-4d electrons as valence states are in satisfactory agreement with other reported theoretical and experimental findings. The calculated band gap is reasonably accurate and improved in comparison to other findings.
Structural, magnetic, and optical properties of zinc- and copper- substituted nickel ferrite nanocrystals
铁氧体纳米晶由于其丰富的物理性质而成为人们感兴趣的材料。在这里，我们将掺杂剂Zn和Cu添加到镍铁氧体纳米晶体Ni 1-xMxFe 2 O 4（0<=x<=1，M{ \in }{Cu，Zn}）中，并表征样品的相关性质如何相应地改变。基本上，这些掺杂导致Fe+3离子重排到两个预先存在的八面体和四面体位置。事实上，这，我们表明，诱导相关的磁性掺杂样品。在Cu掺杂的情况下，Jahn-Teller效应也出现了，我们通过样品的FTIR光谱来识别。此外，我们发现掺杂样品的晶格参数增加，以及掺杂样品的超顺磁性行为，而Jahn-Teller效应排除了CuFe 2 O 4纳米晶体中类似的行为。采用室温光致发光法研究了Zn和Cu掺杂对镍铁氧体纳米晶光学性质的影响。
Self-selective growth of GaAs1-xBix on GaAs zinc blende/wurtzite nanowire heterostructures
Lund University（隆德大学）；NanoLund, Lund University（隆德大学纳米隆德）；Centre for Analysis and Synthesis, Lund University（隆德大学分析与合成中心）；MAX IV Laboratory, Lund University（隆德大学MAX IV实验室）；Niels Bohr Institute, University of Copenhagen（哥本哈根大学尼尔斯玻尔研究所）
Alloy Stabilized Wurtzite Ground State Structures of Zinc-Blende Semiconducting Compounds
用价力场模型和密度泛函理论计算了A $_x$ B $_{1-x}$ C纤锌矿（WZ）合金的基态结构，其中$x=$分别为0.25，0.5和0.75.结果表明，基态WZ合金的应变能和形成焓总是比相应的锌基合金低。因此，我们建议通过合金化可以稳定WZ相。这一新的想法得到以下事实的支持：WZ AlP $_{0.5}$ Sb $_{0.5}$、AlP $_{0.75}$ Sb $_{0.25}$、ZnS $_{0.5}$ Te $_{0.5}$和ZnS $_{0.75}$ Te $_{0.25}$合金在最低能量结构中比相应的ZB合金更稳定。据我们所知，这是合金采用与两个母相不同的结构的第一个例子。
The diamond and zinc-blende semiconductors are well-known and have been widely studied for decades. Yet, their electronic structure still surprises with unexpected topological properties of the valence bands. In this joint theoretical and experimental investigation we demonstrate for the benchmark compounds InSb and GaAs that the electronic structure features topological surface states below the Fermi energy. Our parity analysis shows that the spin-orbit split-off band near the valence band maximum exhibits a strong topologically non-trivial behavior characterized by the $\mathcal{Z}_2$ invari…
Role of the presence of transition-metal atoms at the antisites in CrAs, CrSe and VAs zinc-blende compounds
在最近的出版物[Galanakis I et al 2006 \PR B \textbf{74} 140408（R）]中，我们已经表明，在CrAs和相关的过渡金属硫族化物和磷属元素化物的情况下，在锌-镍结构中结晶，过渡金属原子的过量导致半金属亚铁磁性。后一个属性是至关重要的自旋电子应用方面的铁磁体由于较低的杂散磁场所产生的这些材料。我们扩展这项研究，以涵盖的情况下，过渡金属原子坐在反位是不相同的完美网站。在铬基化合物中，Mn反位的产生保持了由Cr反位产生的半金属亚铁磁特性。在VA的情况下，Cr和Mn反位保持VA的半金属特性（与V反位相反），由于这些原子表现出较大的交换分裂。
We calculate the lattice thermal conductivity ($κ$) for cubic (zinc-blende) and hexagonal (wurtzite) phases for 8 semiconductors using $\textit{ab initio}$ calculations and solving the Phonon Boltzmann Transport Equation, explaining the different behavior of the ratio $κ_{\rm hex}/κ_{\rm cub}$ between the two phases. We show that this behavior depends on the relative importance of two antagonistic factors: anharmonicity, which we find to be always higher in the cubic phase; and the accessible phase space, which is higher for the less symmetric hexagonal phase. Based on that, we develop a metho…
A simple theoretical method for deducing the effective bond-orbital model (EBOM) of III-nitride wurtzite (WZ) semiconductors is presented. In this model, the interaction parameters for zinc-blende (ZB) structures are used as an initial guess for WZ structure based on the two-center approximation. The electronic band structure of III-nitride WZ semiconductors can hence be produced by utilizing this set of parameters modified to include effects due to three-center integrals and fitting with first-principles calculations. Details of the semi-empirical fitting procedure for constructing the EBOM H…
Material structures containing tetrahedral FeAs bonds, depending on their density and geometrical distribution, can host several competing quantum ground states ranging from superconductivity to ferromagnetism. Here we examine structures of quasi two-dimensional (2D) layers of tetrahedral Fe-As bonds embedded with a regular interval in a semiconductor InAs matrix, which resembles the crystal structure of Fe-based superconductors. Contrary to the case of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibit ferromagnetism, whose Curie temperature (Tc) increases rapidly with decreasing…
Half-metallic ferrimagnetism in the [Sc$_{1-x}$V$_x$]C and [Sc$_{1-x} $V$_x$]Si alloys adopting the zinc-blende and wurtzite structures from first-principles
采用第一性原理计算方法研究了[Sc $_{1-x}$ V $_x$ ]C和[Sc $_{1-x}$ V $_x$ ]Si合金的结构、电子和磁性.在平衡岩盐结构中，所有合金都是无磁性的。锌钛矿和纤锌矿结构相对于总能量退化。对于所有的浓度，在这些晶格结构中的合金是半金属与位于自旋下降带的间隙。总自旋矩遵循Slater Pauling行为，在理想ScC和ScSi合金的-1 $μ_B$和理想VC和VSi合金的+1 $μ_B$之间线性变化。对于中等浓度的V和Sc原子具有反平行的自旋磁矩，化合物是半金属亚铁磁体。在临界浓度下，[Sc $_{0.5}$ V $_{0.5}$ ]C和[Sc $_{0.5}$ V $_{0.5}$ ]Si合金的总自旋-磁矩为零，但C基合金表现出半导体行为，而Si基合金则是半金属反铁磁体。
Large spin splitting in the conduction band (CB) and valence band (VB) of ferromagnetic semiconductors (FMSs), predicted by the influential mean-field Zener model[1,2] and assumed in many spintronic device proposals[3-8], has never been observed in the mainstream p-type Mn-doped FMSs[9-15]. Here using tunnelling spectroscopy in Esaki-diode structures, we report the observation of such a large spontaneous spin-splitting energy (ΔE = 31.7 - 50 meV) in the CB bottom of n-type FMS (In,Fe)As, which is surprising considering the very weak s-d exchange interaction reported in several zinc-blende (ZB)…
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given through the comparison of antiphase domain distributions in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The antiphase domain burying step of GaP/Si samples is then observed at …
The in-plane coefficient of thermal expansion (CTE) for CdSe nanoplatelets with the zinc-blende structure containing from two to five monolayers is calculated from first principles within the quasiharmonic approximation. A comparison of the obtained results with those for bulk CdSe with both the zinc-blende and wurtzite structures finds a significant increase in the magnitude of negative CTE and the temperature range of its observation in nanoplatelets. The main contribution to the negative thermal expansion in CdSe nanoplatelets is given by the out-of-plane flexural ZA mode and in-plane optic…
The mechanical properties of Cadmium Selenide (CdSe) nanowire is an emerging issue due to its application in semiconductor and optoelectronics industries. In this paper, we conducted molecular dynamics (MD) simulations to investigate the temperature-dependent mechanical properties and failure behavior of Zinc-Blende (ZB) CdSe nanowire under uniaxial tensile deformation. We employed Stillinger-Weber (SW) potential to describe the inter-atomic interactions. The effect of variation of temperatures (100 K-600 K), sizes, and crystal orientation on the tensile response of the CdSe nanowires is inves…
Ultrathin semiconductor nanocrystals (NCs) with at least one dimension below their exciton Bohr radius receive a rapidly increasing attention due to their unique physicochemical properties such as strong quantum confinement, large surface-to-volume ratio, and giant oscillator strength. These superior properties highly depend on the shape and crystal phase of semiconductor NCs. Slight changes in the shape and phase of NCs can cause significant changes in their properties. Therefore, it is crucial to controllably synthesize semiconductor NCs. Here, we demonstrate not only the synthesis of robust…
GaN based high electron mobility transistors show promise in numerous device applications which elicits the need for accurate models of bulk, surface, and interface electronic properties. We detail here a hybrid density functional theory study of zinc blende (zb) GaN and diamond bulk and surface properties, and zb GaN on diamond interfaces using slab supercell models. Details are provided on the dependence of electronic properties with respect to supercell size, the use of pseudo-hydrogen to passivate the bottom GaN layer, and dipole corrections. The large bulk modulus of diamond provides a te…
Copper-doped zinc sulfide (ZnS:Cu) exhibits down-conversion luminescence in the UV, visible, and IR regions of the electromagnetic spectrum; the visible red, green, and blue emission is referred to as R-Cu, G-Cu, and B-Cu, respectively. The sub-bandgap emission arises from optical transitions between localized electronic states created by point defects, making ZnS:Cu a prolific phosphor material and an intriguing candidate material for quantum information science, where point defects excel as single-photon sources and spin qubits. Colloidal nanocrystals (NCs) of ZnS:Cu are particularly interes…
