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arXiv 2403.19986cond-mat.mes-hall
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利用库自旋积累实现量子点量子比特的高温自旋选择性

High temperature spin selectivity in a quantum dot qubit using reservoir spin accumulation

R. Jansen, S. Yuasa

AI总结:

本文提出利用铁磁体诱导的库自旋积累在量子点中实现高温自旋选择性,在4 K液氦温度下可实现错误率低于$10^{-4}$的自旋初始化,为高温自旋量子比特操作及量子计算与自旋电子学的融合提供了新途径。

摘要:

在具有片上控制电子器件的大规模量子比特阵列中,利用量子点中的自旋进行容错量子计算,要求在高温下实现高保真度的量子比特操作。这对单自旋初始化和读出构成了挑战。现有方案依赖于塞曼分裂或泡利自旋阻塞,对于基于电子的量子比特,其典型能量尺度为0.1或1 meV,因此只有在约0.1 K或1 K及以下的温度下才能获得足够的保真度。本文描述了一种方法,利用具有自旋积累的库在量子点中实现高温自旋选择性,该库确定性地设定量子点上单个电子的自旋。由于在硅中可以实现高达10 meV的自旋积累,即使在4 K的液氦浴中,也可以实现电学可调且错误率低于$10^{-4}$的自旋选择。通过由邻近铁磁体诱导和控制的自旋积累,经典信息(磁化方向)被映射到自旋量子比特上。这些特性为在高温下操作自旋量子比特提供了前景,并将量子计算与自旋电子学两个领域连接起来。

英文摘要:

Employing spins in quantum dots for fault-tolerant quantum computing in large-scale qubit arrays with on-chip control electronics requires high-fidelity qubit operation at elevated temperature. This poses a challenge for single spin initialization and readout. Existing schemes rely on Zeeman splitting or Pauli spin blockade with typical energy scales of 0.1 or 1 meV for electron-based qubits, so that sufficient fidelity is obtained only at temperatures around or below 0.1 or 1 K, respectively. Here we describe a method to achieve high temperature spin selectivity in a quantum dot using a reservoir with a spin accumulation, which deterministically sets the spin of a single electron on the dot. Since spin accumulation as large as 10 meV is achievable in silicon, spin selection with electrically adjustable error rates below $10^{-4}$ is possible even in a liquid He bath at 4 K. Via the reservoir spin accumulation, induced and controlled by a nearby ferromagnet, classical information (magnetization direction) is mapped onto a spin qubit. These features provide the prospect of spin qubit operation at elevated temperatures and connect the worlds of quantum computing and spintronics.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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