Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in DRAM where repeatedly accessing (hammering) or keeping active (pressing) a memory location induces bitflips in other memory locations. Unfortunately, shrinking technology node size exacerbates read disturbance in DRAM chips over generations. As a result, existing defense mechanisms suffer from significant performance and energy overheads, limited effectiveness, or prohibitively high hardware complexity.
In this paper, we tackle these shortcomings by leveraging the spatial variation in read disturbance across different memory locations in real DRAM chips. To do so, we 1) present the first rigorous real DRAM chip characterization study of spatial variation of read disturbance and 2) propose Svärd, a new mechanism that dynamically adapts the aggressiveness of existing solutions based on the row-level read disturbance profile. Our experimental characterization on 144 real DDR4 DRAM chips representing 10 chip designs demonstrates a large variation in read disturbance vulnerability across different memory locations: in the part of memory with the worst read disturbance vulnerability, 1) up to 2x the number of bitflips can occur and 2) bitflips can occur at an order of magnitude fewer accesses, compared to the memory locations with the least vulnerability to read disturbance. Svärd leverages this variation to reduce the overheads of five state-of-the-art read disturbance solutions, and thus significantly increases system performance.
Demystifying DRAM Read Disturbance: Bridging the Gap Between Experimental Characterization and Device-Level Modeling of RowHammer and RowPress Phenomena
ETH Zurich（苏黎世联邦理工学院）；East China Normal University（华东师范大学）；Shanghai Jiao Tong University（上海交通大学）
RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (i.e., hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer vulnerability worsens as DRAM cell size and cell-to-cell spacing shrink. Recent studies demonstrate that modern DRAM chips, including chips previously marketed as RowHammer-safe, are even more vulnerable to RowHammer than older chips such that the required hammer count to cause a bit flip has reduced by more than 10X in the last decade. Therefore, it is essential to develop a better understanding and in-depth insights into the RowH…
As process technology scales down to smaller dimensions, DRAM chips become more vulnerable to disturbance, a phenomenon in which different DRAM cells interfere with each other's operation. For the first time in academic literature, our ISCA paper exposes the existence of disturbance errors in commodity DRAM chips that are sold and used today. We show that repeatedly reading from the same address could corrupt data in nearby addresses. More specifically: When a DRAM row is opened (i.e., activated) and closed (i.e., precharged) repeatedly (i.e., hammered), it can induce disturbance errors in adj…
The Rowhammer bug allows unauthorized modification of bits in DRAM cells from unprivileged software, enabling powerful privilege-escalation attacks. Sophisticated Rowhammer countermeasures have been presented, aiming at mitigating the Rowhammer bug or its exploitation. However, the state of the art provides insufficient insight on the completeness of these defenses. In this paper, we present novel Rowhammer attack and exploitation primitives, showing that even a combination of all defenses is ineffective. Our new attack technique, one-location hammering, breaks previous assumptions on requirem…
Rowhammer is a hardware vulnerability in DRAM memory, where repeated access to memory can induce bit flips in neighboring memory locations. Being a hardware vulnerability, rowhammer bypasses all of the system memory protection, allowing adversaries to compromise the integrity and confidentiality of data. Rowhammer attacks have shown to enable privilege escalation, sandbox escape, and cryptographic key disclosures. Recently, several proposals suggest exploiting the spatial proximity between the accessed memory location and the location of the bit flip for a defense against rowhammer. These all …
This retrospective paper describes the RowHammer problem in Dynamic Random Access Memory (DRAM), which was initially introduced by Kim et al. at the ISCA 2014 conference~\cite{rowhammer-isca2014}. RowHammer is a prime (and perhaps the first) example of how a circuit-level failure mechanism can cause a practical and widespread system security vulnerability. It is the phenomenon that repeatedly accessing a row in a modern DRAM chip causes bit flips in physically-adjacent rows at consistently predictable bit locations. RowHammer is caused by a hardware failure mechanism called {\em DRAM disturban…
