We present electrical resistivity measurements on the prototypical heavy-fermion metal YbRh$_{2}$Si$_{2}$ (YRS) under $a$-axis tensile and compressive strain and focus on the evolution of the resistivity maximum near 136~K that arises from the interplay of the Kondo effect and the crystal electric field (CEF) splitting. While compressive strain reduces $T_{\rm max}$, similar as previously reported for hydrostatic pressure, $T_{\rm max}$ is enhanced up to 145~K for 0.13\% tensile strain. Model calculations for the strain effect on CEF splitting in YRS reveal a negligible shift of the levels. Instead, the enhancement of the resistivity maximum indicates a 20\% increase of the Kondo temperature. This opens the perspective to access the hidden zero-field QCP in pure YRS.
Uniaxial stress effect on the quasi-one-dimensional Kondo lattice CeCo$_2$Ga$_8$
准一维极限中的量子临界现象仍然是一个悬而未决的问题。通过电输运和交流热容测量，研究了准一维近藤晶格CeCo $_2$ Ga $_8$的单轴应力效应.推测CeCo $_2$ Ga $_8$位于量子临界点的附近但在量子无序侧。在压缩平行于Ce-Ce链的${c}$轴时，增强了相干近藤效应的开始。相反，当链内距离通过沿{a}或{b}轴的压缩而延长时，电子比热在低温下更快速地发散。这些结果表明，拉伸链内应变（$\varepsilon_c >0$）推动CeCo $_2$ Ga $_8$更接近量子临界点，而压缩链内应变（$\varepsilon_c <0$）可能导致偏离。我们的工作提供了一个罕见的范例操纵附近的量子临界点的准一维Kondo晶格单轴应力，并铺平了道路，进一步研究的独特功能的量子临界准一维极限。
Decoupling the effects of geometry and nature of strain in LaMnO$_3$: Interplay of dynamic correlations and uniaxial strain driving magnetic phase transitions
Strain-induced structural transitions in (111)-oriented (LaMnO$_3$)$_{2n}|$(SrMnO$_3$)$_n$ superlattices
Institute of Physics, Nicolaus Copernicus University（尼古拉·哥白尼大学物理研究所）；School of Physics, Engineering and Technology, University of York（约克大学物理、工程与技术学院）；Department of Physics, School of Natural and Computing Sciences, University of Aberdeen（阿伯丁大学自然与计算科学学院物理系）；Department of Physics and Institute of Quantum Convergence and Technology, Kangwon National University（江原国立大学物理系及量子融合技术研究所）；Department of Physics and Astronomy, Uppsala University（乌普萨拉大学物理与天文学系）
Electron-like high-temperature superconductivity induced by compressive strain in La2PrNi2O7 thin films
University of Science and Technology of China（中国科学技术大学）；Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China（中国科学技术大学合肥微尺度物质科学国家研究中心）；Collaborative Innovation Center of Advanced Microstructures, Nanjing University（南京大学先进微观结构协同创新中心）；Hefei National Laboratory, University of Science and Technology of China（中国科学技术大学合肥国家实验室）
Comment on ``Strain effect and the phase diagram of La$_{1-x}$Ba$_x$MnO$_3$ thin films''
最近的实验在La $_{1-x}$ Ba $_x$ MnO $_3$薄膜由Zhang { \it et al.} {[Phys. Rev. B { \bf 64}，184404（2001）]}表明铁磁居里温度$T_c$通过拉伸（压缩）应变而提高（降低）。该结果被认为是反常的，因为作者通常理解，拉伸应变应导致电子跳跃$t$（以及因此$T_c$）的减少，这是由于（面内）Mn-O键长的延长。在这篇评论中，对应变效应的这种一般性理解是不赞成的。有人认为，拉伸应变主要导致更大的Mn-O-Mn键角（Mn-O键长几乎不变），因此$t$的纯几何考虑已经朝着Zhang { \it et al.}同时，提出了一个考虑动态电子-声子耦合的间接应变效应，这可能会改善定量解释。
