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arXiv 2401.14547cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherphysics.app-ph
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拓扑电荷密度波的发现

Discovery of a Topological Charge Density Wave

Maksim Litskevich, Md Shafayat Hossain, Songbo Zhang, Zi-Jia Cheng, Satya N. Guin, Nitesh Kumar, Chandra Shekhar, Zhiwei Wang, Yongkai Li, Guoqing Chang, Jia-Xi… 展开作者

Maksim Litskevich, Md Shafayat Hossain, Songbo Zhang, Zi-Jia Cheng, Satya N. Guin, Nitesh Kumar, Chandra Shekhar, Zhiwei Wang, Yongkai Li, Guoqing Chang, Jia-Xin Yin, Qi Zhang, Guangming Cheng, Yu-Xiao Jiang, Tyler A. Cochran, Nana Shumiya, Xian P. Yang, Daniel Multer, Xiaoxiong Liu, Nan Yao, Yugui Yao, Claudia Felser, Titus Neupert, M. Zahid Hasan

AI总结:

本文利用扫描隧道显微镜在拓扑材料Ta2Se8I中发现并可视化了一种拓扑电荷密度波,观测到超过500 meV的绝缘能隙及与CDW波矢匹配的带隙内边界模式,并通过温度依赖实验和理论分析证实该边界模式具有拓扑性且与CDW直接相关。

摘要:

电荷密度波(CDW)出现在众多凝聚态物质平台中,从高温超导体到量子霍尔系统皆可见其踪迹。尽管其如此普遍,但一直以来缺乏对能够唯一源自电荷序的边界态的直接实验研究。在此,我们利用扫描隧道显微镜,直接可视化了拓扑材料Ta2Se8I中CDW的体态和边界现象。在转变温度(TCDW = 260 K)以下,原子级分辨晶格上的隧道谱揭示出体态和表面存在一个超过500 meV的大绝缘能隙,超过了标准弱耦合平均场理论的预测。谱学成像证实了CDW的存在,导带处的局域态密度(LDOS)极大值对应于价带处的LDOS极小值,从而揭示了相应CDW序中π的相位差。与此同时,在单层台阶边缘处,我们探测到一种带隙内边界模式,其沿边缘的调制与沿边缘的CDW波矢相匹配。有趣的是,边缘态调制的相位在电荷序能隙内发生π的移动,通过平滑的能量-相位关系连接了完全带隙的体态(和表面)导带与价带。这与边缘模式的拓扑谱流具有相似性,其中边界模式在能量和动量大小上桥接带隙体态模式,但在Ta2Se8I中,这种连接独特地发生在能量和动量相位上。值得注意的是,我们的温度依赖性测量表明,在TCDW以上绝缘能隙和带隙内边缘态消失,表明它们与CDW直接相关。理论分析也表明,所观测到的边界模式是拓扑性的,并与CDW相关联。

英文摘要:

Charge density waves (CDWs) appear in numerous condensed matter platforms, ranging from high-Tc superconductors to quantum Hall systems. Despite such ubiquity, there has been a lack of direct experimental study on boundary states that can uniquely stem from the charge order. Here, using scanning tunneling microscopy, we directly visualize the bulk and boundary phenomenology of CDW in a topological material, Ta2Se8I. Below the transition temperature (TCDW = 260 K), tunneling spectra on an atomically resolved lattice reveal a large insulating gap in the bulk and on the surface, exceeding 500 meV, surpassing predictions from standard weakly-coupled mean-field theory. Spectroscopic imaging confirms the presence of CDW, with LDOS maxima at the conduction band corresponding to the LDOS minima at the valence band, thus revealing a π phase difference in the respective CDW order. Concomitantly, at a monolayer step edge, we detect an in-gap boundary mode with modulations along the edge that match the CDW wavevector along the edge. Intriguingly, the phase of the edge state modulation shifts by π within the charge order gap, connecting the fully gapped bulk (and surface) conduction and valence bands via a smooth energy-phase relation. This bears similarity to the topological spectral flow of edge modes, where the boundary modes bridge the gapped bulk modes in energy and momentum magnitude but in Ta2Se8I, the connectivity distinctly occurs in energy and momentum phase. Notably, our temperature-dependent measurements indicate a vanishing of the insulating gap and the in-gap edge state above TCDW, suggesting their direct relation to CDW. The theoretical analysis also indicates that the observed boundary mode is topological and linked to CDW.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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