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arXiv 2401.06985cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el
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磁掺杂拓扑绝缘体中量子反常霍尔态的电动力学

Electrodynamics of the quantum anomalous Hall state in a magnetically doped topological insulator

Zhenisbek Tagay, Hee Taek Yi, Deepti Jain, Seongshik Oh, N. P. Armitage

AI总结:

本文利用高精度时域太赫兹偏振仪研究Cr掺杂(Bi,Sb)2Te3薄膜,发现其交流霍尔电导与直流量子化行为不同,并用磁能隙无序模型解释了无序对直流与交流量子反常霍尔效应的不同影响。

摘要:

过去十年间,磁掺杂拓扑绝缘体作为展现量子反常霍尔效应的材料平台得到了广泛研究。大多数材料实现都是磁掺杂的,尽管材料研究有所进展,但仍受到严重无序效应的影响。在此类体系中,人们认为磁无序会导致空间变化的狄拉克质量能隙和化学势涨落,因此量子化电导仅在极低温度下才能被观测到。在此,我们使用最近发展的高精度时域太赫兹(THz)偏振仪来研究Cr掺杂(Bi,Sb)$_2$Te$_3$薄膜的低能电动力学响应。最近的研究表明,这些薄膜在零栅极电压下可在高达T = 2 K的温度下表现出直流量子化反常霍尔响应。我们发现,太赫兹频段霍尔电导$σ_{xy}(ω)$的实部在低至T = 2 K时略小于$e^2/h$,并表现出非常规的随频率增加而减小的依赖关系。$σ_{xy}(ω)$的虚部(耗散部分)很小,但随omega增加而增大。我们将数据的这两个方面与一个描述有效磁能隙无序的简单模型联系起来。我们的工作凸显了无序对直流与交流量子反常霍尔效应可能产生的不同影响。

英文摘要:

Magnetically doped topological insulators have been extensively studied over the past decade as a material platform to exhibit quantum anomalous Hall effect. Most material realizations are magnetically doped and despite material advances suffer from large disorder effects. In such systems, it is believed that magnetic disorder leads to a spatially varying Dirac mass gap and chemical potential fluctuations, and hence quantized conductance is only observed at very low temperatures. Here, we use a recently developed high-precision time-domain terahertz (THz) polarimeter to study the low-energy electrodynamic response of Cr-doped (Bi,Sb)$_2$Te$_3$ thin films. These films have been recently shown to exhibit a dc quantized anomalous Hall response up to T = 2 K at zero gate voltage. We show that the real part of the THz range Hall conductance $σ_{xy}(ω)$ is slightly smaller than $e^2/h$ down to T = 2 K with an unconventional decreasing dependence on frequency. The imaginary (dissipative) part of $σ_{xy}(ω)$ is small, but increasing as a function of omega. We connect both aspects of our data to a simple model for effective magnetic gap disorder. Our work highlights the different effect that disorder can have on the dc vs. ac quantum anomalous Hall effect.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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