We study disorder induced topological phase transitions in magnetically doped (Bi, Sb)$_2$Te$_3$ thin films, by using large scale transport simulations of the conductance through a disordered region coupled to reservoirs in the quantum spin Hall regime. Besides the disorder strength, the rich phase diagram also strongly depends on the magnetic exchange field, the Fermi level, and the initial topological state in the undoped and clean limit of the films. In an initially trivial system at non-zero exchange field, varying the disorder strength can induce a sequence of transitions from a normal insulating, to a quantum anomalous Hall, then a spin-Chern insulating, and finally an Anderson insulating state. While for a system with topology initially, a similar sequence, but only starting from the quantum anomalous Hall state, can be induced. Varying the Fermi level we find a similarly rich phase diagram, including transitions from the quantum anomalous Hall to the spin-Chern insulating state via a state that behaves as a mixture of a quantum anomalous Hall and a metallic state, akin to recent experimental reports.
The chirality associated with broken time reversal symmetry in magnetically doped topological insulators has important implications to the quantum transport phenomena. Here we report the anomalous Hall effect studies in Mn- and Cr-doped Bi$_2$Te$_3$ topological insulators with varied thickness and doping content. By tracing the chirality of the Hall loops, we find that the Mn-type anomalous Hall effect with clockwise chirality is strengthened by the reduction of film thickness, which is opposite to that of the Cr-type anomalous Hall effect with counterclockwise chirality. We provide a phenomen…
The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr doped (Bi,Sb)$_2$Te$_3$ at a low temperature ($\sim$ 30mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional diluted magnetic semiconductors with doped InAs/GaSb type II quantum wells. Based on a four band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation …
Topological insulators (TI) are a new class of quantum materials with insulating bulk enclosed by topologically protected metallic boundaries. The surface states of three-dimensional TIs have spin helical Dirac structure, and are robust against time reversal invariant perturbations. This extraordinary property is notably exemplified by the absence of backscattering by nonmagnetic impurities and the weak antilocalization (WAL) of Dirac fermions. Breaking the time reversal symmetry (TRS) by magnetic element doping is predicted to create a variety of exotic topological magnetoelectric effects. He…
One-dimensional (1D) quantum wires, which are functionalized by magnetic ad-atoms, can host ballistic helical transport. Helicity protects transport from an undesirable influence of material imperfections, and it makes the magnetically doped wire a very promising element for nanoelectronics and spintronics. However, fabricating purely 1D conductors is experimentally very challenging and not always feasible. In this paper, we show that the protected helical transport can exist even in quasi-1D wires. We model the quasi-1D magnetically doped wire as two coupled dense 1D Kondo chains. Each chain …
We use time-resolved Kerr rotation to demonstrate the optical and electronic tuning of both the electronic and local moment (Mn) spin dynamics in electrically gated parabolic quantum wells derived from II-VI diluted magnetic semiconductors. By changing either the electrical bias or the laser energy, the electron spin precession frequency is varied from 0.1 to 0.8 THz at a magnetic field of 3 T and at a temperature of 5 K. The corresponding range of the electrically-tuned effective electron g-factor is an order of magnitude larger compared with similar nonmagnetic III-V parabolic quantum wells.…
We discuss the possibility of realizing Weyl semimetal phase in the magnetically doped topological band insulators. When the magnetic moments are ferromagnetically polarized, we show that there are three phases in the system upon the competition between topological mass and magnetic mass: topological band insulator phase, Weyl semimetal phase, and trivial phase. We explicitly derive the low energy theory of Weyl points from the general continuum Hamiltonian of topological insulators near the Dirac point, e.g. ${\bf k} \cdot {\bf p}$ theory near $Γ$ point for Bi_{2}Se_{3}. Furthermore, we intro…
We study the plasmon excitations and the electromagnetic response of the magnetically doped single layer and multilayer of ``helical metals'', which emerge at the surfaces of topological insulators. For the single layer case, we find a ``spin-plasmon'' mode with the rotating spin texture due to the combination of the spin-momentum locking of ``helical metals'' and the Hall response from magnetization. For the multilayers case, we investigate the electromagnetic response due to the plasmon excitations, including the Faraday rotation for the light propagating normal to the helical metal layers a…
We report magnetotransport measurements on magnetically doped (Bi,Sb)$_2$Te$_3$ films grown by molecular beam epitaxy. In Hallbar devices, logarithmic dependence on temperature and bias voltage are obseved in both the longitudinal and anomalous Hall resistance. The interplay of disorder and electron-electron interactions is found to explain quantitatively the observed logarithmic singularities and is a dominant scattering mechanism in these samples. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum osci…
Twin domains are naturally present in the topological insulator \BiSe{} and affect strongly its properties. While studies of its behavior for ideal \BiSe{} structure exist, little is known about their possible interaction with other defects. Extra information are needed especially for the case of artificial perturbation of topological insulator states by magnetic doping, which has attracted a lot of attention recently. Employing ab initio calculations based on layered Green's function formalism, we study the interaction between twin planes in \BiSe{}. We show the influence of various magnetic …
We study the electron transport in a magnetically doped three dimensional topological insulator (TI) by taking the effects of impurity-impurity exchange interactions into account. The interactions between magnetic impurities give rise to the formation of {\it magnetic clusters} with temperature dependent mean sizes, randomly distributed on the surface of the TI. Instead of dealing with single magnetic impurities, we consider surface Dirac electrons to be scattered off magnetic clusters, and define the scattering potential in terms of clusters mean sizes. Within the semiclassical Boltzmann appr…
Proximity induced superconducting states in the surface of magnetically doped topological insulators can host chiral Majorana modes. We consider a Josephson junction in that system with changing the chemical potential, which drives a topological phase transition in the induced superconducting states as well as a metal-insulator transition in the surface states. The local density of states and the Josephson current are analytically calculated by McMillan's Green's function method in terms of the Andreev reflection coefficient. We show that although the magnitude of the Josephson current is grea…
Magnetically-doped graphene systems are potential candidates for application in future spintronic devices. A key step is to understand the pairwise interactions between magnetic impurities embedded in graphene that are mediated by the graphene conduction electrons. A large number of studies have been undertaken to investigate the indirect exchange, or RKKY, interactions in graphene. Many of these studies report a decay rate faster than expected for a 2-dimensional material and the absence of the usual distance dependent oscillations. In this review we summarize the techniques used to calculate…
We show that periodic magnetic nanostructures (magnonic crystals) represent an ideal system for studying excitations on disordered periodical lattices because of the possibility of controlled variation of the degree of disorder by varying the applied magnetic field. Ferromagnetic resonance (FMR) data collected inside minor hysteresis loops for a periodic array of Permalloy nanowires of alternating width and magnetic force microscopy images of the array taken after running each of these loops were used to establish convincing evidence that there is a strong correlation between the type of FMR r…
In this work the conducting properties of graphene lattice with a particular concentration of defect (5\% and 10\%) has been studied. The real space block recursion method introduced by Haydock et al. has been used in presence of the random distribution of defects in graphene. This Green function based method is found more powerful than the usual reciprocal based methods which need artificial periodicity. Different resonant states appear because of the presence of topological and local defects are studied within the framework of Green function.
Highly doped Poly(3,4-ethylenedioxythiophene) or PEDOT is a conductive polymer with a wide range of applications in energy conversion due to its ease of processing, optical properties and high conductivity. The latter is influenced by processing conditions, including formulation, annealing, and solvent treatment of the polymer, which also affects the polymer arrangement. Here we show that the analysis of the optical spectra of PEDOT domains reveals the nature and magnitude of the structural disorder in the material. In particular, the optical spectra of objects on individual domains can be use…
We study the superconducting properties of the thin film BCS superconductor proximity coupled to a magnetically doped topological insulator(TI). Using the mean field theory, we show that Fulde-Ferrell(FF) pairing can be induced in the conventional superconductor by having inverse proximity effect(IPE). This occurs when the IPE of the TI to the superconductor is large enough that the normal band of the superconductor possesses a proximity induced spin-orbit coupling and magnetization. We find that the energetics of the different pairings are dependent on the coupling strength between the TI and…
Starting from a three dimensional Hamiltonian, we study the optical properties of ultra-thin topological insulator slabs for which the coupling between Dirac fermions on opposite surfaces results in two degenerated gapped hyperbolic bands. The gap is a threshold for the optical absorption and translates in a peak in the imaginary part of the optical conductivity. An exchange field applied perpendicular to the slab splits the degenerated hyperbolic bands and a double step structure come out in the optical absorption, whereas a double peak structure appears in the imaginary part of the longitudi…
We study theoretically the role of quenched magnetic disorder at the surface of a topological insulator by numerical simulation and scaling analysis. It is found that all the surface states are localized while the transverse conductivity is quantized to be $\pm {{e^2} \over {2 h}}$ as long as the Fermi energy is within the bulk gap. This greatly facilitates the realization of the topological magnetoelectric effect proposed by Qi {\it et al.} (Phys. Rev. B\textbf{78}, 195424 (2008)) with the surface magnetization direction being controlled by the simultaneous application of magnetic and electri…
In magnetically doped thin-film topological insulators, aligning the magnetic moments generates a quantum anomalous Hall phase supporting a single chiral edge state. We show that as the system de-magnetizes, disorder from randomly oriented magnetic moments can produce a `quantum anomalous parity Hall' phase with \emph{helical} edge modes protected by a unitary reflection symmetry. We further show that introducing superconductivity, combined with selective breaking of reflection symmetry by a gate, allows for creation and manipulation of Majorana zero modes via purely electrical means and at ze…
As a promising candidate system to realize topological superconductivity, the system of a 3D topological insulator (TI) grown on top of the s-wave superconductor has been extensively studied. To access the topological superconductivity experimentally, the 3D TI sample must be thin enough to allow for Cooper pair tunneling to the exposed surface of TI. The use of magnetically ordered dopants to break time-reversal symmetry may allow the surface of a TI to host Majorana fermion, which are believed to be a signature of topological superconductivity. In this work, we study a magnetically-doped thi…
We examine the transport properties of magnetically doped topological insulator (TI) thin films subject to correlated non-magnetic disorder. For the disorder we choose a quasi-periodic potential with a random phase. We restrict the disorder to a central region, which is coupled to two leads in a clean quantum spin Hall insulator (QSHI) state and concentrate on different orientations of the quasi-periodicity in the two-dimensional central region. In the case of a diagonally oriented or purely longitudinal quasi-periodicity we find different topological Anderson insulator (TAI) phases, with a qu…
By generalizing the Kubo-Streda formula for calculating electrical conductivities to the thermoelectric coefficients, we theoretically study the anomalous Nernst effect (ANE) on the surface of a topological insulator induced by a finite concentration of magnetic impurities. The ANE is found to be modulated by the impurity scattering and thermal fluctuations, simultaneously, and so exhibits rich structures in the energy space. While the anomalous Hall conductivity is half-integer quantized with the Fermi level across the magnetic-impurity-induced gap, the anomalous Nernst signal (ANS) is fully …
Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate FET structure. The SOT strength can be modulated by a factor of 4 within the accessible gate voltage range,…
We study the phase diagram and transport properties of arbitrarily doped quantum wires functionalized by magnetic adatoms. The appropriate theoretical model for these systems is a dense one-dimensional Kondo Lattice (KL) which consists of itinerant electrons interacting with localized quantum magnetic moments. We discover the novel phase of the locally helical metal where transport is protected from a destructive influence of material imperfections. Paradoxically, such a protection emerges without a need of the global helicity, which is inherent in all previously studied helical systems and re…
Anomalous Localization in Magnetically Doped Two-Dimensional Topological Insulators
Instituto de Física Teórica, São Paulo State University（圣保罗州立大学理论物理研究所）；School of Physics, Trinity College Dublin（都柏林三一学院物理学院）；Advanced Materials and Bioengineering Research (AMBER) Centre, Trinity College Dublin（都柏林三一学院先进材料与生物工程研究中心）；Instituto de Física, Universidade Federal do Rio de Janeiro（里约热内卢联邦大学物理研究所）
We study the photon-dressed electronic band structure of topological insulator thin films which could be also doped doped by magnetic impurities in response to an off-resonance time-periodic electromagnetic field. The thin films irradiated by a circularly polarized light undergo phase transition, in a driven system made by and a fascinating feature of distinct phases emerges in the phase diagram depending on the parameters such as frequency, intensity and polarization of the light. As a particular case, quantum anomalous Hall insulator phase is induced purely by the light-induced mass term wit…
We study the electronic and transport properties of a topological insulator nanowire including selective magnetic doping of its surfaces. We use a model which is appropriate to describe materials like Bi$_2$Se$_3$ within a k.p approximation and consider nanowires with a rectangular geometry. Within this model the magnetic doping at the (111) surfaces induces a Zeeman field which opens a gap at the Dirac cones corresponding to the surface states. For obtaining the transport properties in a two terminal configuration we use a recursive Green function method based on a tight-binding model which i…
We theoretically study the spin and charge generation along with the electron transport on a disordered surface of a doped three-dimensional topological insulator/magnetic insulator junction by using Green's function techniques. We find that the spin and charge current are induced by not only local but also nonlocal magnetization dynamics through nonmagnetic impurity scattering on the disordered surface of the doped topological insulator. We also clarify that the spin current as well as charge density are induced by spatially inhomogeneous magnetization dynamics, and the spin current diffusive…
We undertake an exact numerical study of the effects of disorder on the Anderson localization of electronic states in graphene. Analyzing the scaling behaviors of inverse participation ratio and geometrically averaged density of states, we find that Anderson metal-insulator transition can be introduced by the presence of quenched random disorder. In contrast with the conventional picture of localization, four mobility edges can be observed for the honeycomb lattice with specific disorder strength and impurity concentration. Considering the screening effects of interactions on disorder potentia…
We use magneto-conductivity to study the magnetic proximity effect on surface states of doped topological insulators. Our bilayers consist of a layer of Fe$_7$Se$_8$, which is a metallic ferrimagnet and a layer of Bi$_{0.8}$Sb$_{1.2}$Te$_{3}$ which is a highly hole-doped topological insulator. Using transport measurements and a modified Hikami-Larkin-Nagaoka model, we show that the ferromagnet shortens significantly the effective coherence length of the surface states, suggesting that a gap is opened at the Dirac point. We show that the magnetically induced gap persists on surface states which…
We report experimental studies of conductance and magnetoconductance of GaAs/AlGaAs quantum well structures where both wells and barriers are doped by acceptor impurity Be. Temperature dependence of conductance demonstrate a non-monotonic behavior at temperatures around 100 K. At small temperatures (less than 10 K) we observed strong negative magnetoresistance at moderate magnetic field which crossed over to positive magnetoresistance at very strong magnetic fields and was completely suppressed with an increase of temperature. We ascribe these unusual features to effects of temperature and mag…
Paramagnon Heat Capacity and Anomalous Thermopower in Anisotropic Magnetic Systems: Understanding Inter-Layer Spin Correlations in a Magnetically Disordered Phase
We investigate nonperturbatively the effect of a magnetic dopant impurity on the edge transport of a quantum spin Hall (QSH) insulator. We show that for a strongly coupled magnetic dopant located near the edge of a system, a pair of transmission anti-resonances appear. When the chemical potential is on resonance, interaction effects broaden the anti-resonance width with decreasing temperature, thus suppressing transport for both repulsive and moderately attractive interactions. Consequences for the recently observed QSH insulating phase of the $1$-T$^{\prime}$ of WTe$_2$ are briefly discussed.
We elucidate the effects of defect disorder and $e$-$e$ interaction on the spectral density of the defect states emerging in the Mott-Hubbard gap of doped transition-metal oxides, such as Y$_{1-x}$Ca$_{x}$VO$_{3}$. A soft gap of kinetic origin develops in the defect band and survives defect disorder for $e$-$e$ interaction strengths comparable to the defect potential and hopping integral values above a doping dependent threshold, otherwise only a pseudogap persists. These two regimes naturally emerge in the statistical distribution of gaps among different defect realizations, which turns out t…
Transport in disordered armchair graphene nanoribbons (AGR) with long-range correlation between quantum wire contact is investigated by transfer matrix combined with Landauer's formula. Metal-insulator transition is induced by disorder in neutral AGR. Thereinto, the conductance is one conductance quantum for metallic phase and exponentially decays otherwise when the length of AGR is infinity and far longer than its width. Similar to the case of long-range disorder, the conductance of neutral AGR first increases and then decreases while the conductance of doped AGR monotonically decreases, as t…
Magnetotransport measurements are presented on paramagnetic (Hg,Mn)Te quantum wells (QWs) with an inverted band structure. Gate-voltage controlled density dependent measurements reveal an unusual behavior in the transition regime from n- to p-type conductance: A very small magnetic field of approximately 70 mT is sufficient to induce a transition into the nu = -1 quantum Hall state, which extends up to at least 10 Tesla. The onset field value remains constant for a unexpectedly wide gate-voltage range. Based on temperature and angle-dependent magnetic field measurements we show that the unusua…
We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B<7 T, we observe a strong modification of the conductance due to the destruction of weak localization whereas at higher fields, where the magnetic field length becomes comparable to the effective Bohr radius of phosphorous in silicon, a strong decrease in conductance is demonstrated. Data in the high and low electric field bias regimes are then compared to show that close to the Coulomb blockade edge magnetica…
Evidence for the formation of nanoprecipitates with magnetically disordered regions in bulk $\mathrm{Ni}_{50}\mathrm{Mn}_{45}\mathrm{In}_{5}$ Heusler alloys
University of Luxembourg（卢森堡大学）；Technische Universität München（慕尼黑工业大学）；Institut Laue-Langevin（劳厄-朗之万研究所）；Australian Centre for Neutron Scattering, ANSTO（澳大利亚中子散射中心，澳联原子能机构）
Dirac Fermion, which is the low energy collective excitation near the Dirac cone in monolayer graphene, have gained great attention by low energy Terahertz probe. In the case of undoped graphene, it has been generally understood that the ultrafast terahertz thermal relaxation is mostly driven by the electron-phonon coupling (EOP), which can be prolonged to tens and hundreds of picoseconds. However, for the high doped graphene, which manifests the negative photoinduced terahertz conductivity, there is still no consensus on the dominant aspects of the cooling process on a time scale of a few pic…
Interfacing superconducting quantum processors, working in the GHz frequency range, with optical quantum networks and atomic qubits is a challenging task for the implementation of distributed quantum information processing as well as for quantum communication. Using spin ensembles of rare earth ions provide an excellent opportunity to bridge microwave and optical domains at the quantum level. In this letter, we demonstrate magnetic coupling of Er$^{3+}$ spins doped in Y$_{2}$SiO$_{5}$ crystal to a high-Q coplanar superconducting resonator.
In proximity to an s-wave superconductor, a one- or two-dimensional, electron- or hole-doped semiconductor with a sizable spin-orbit coupling and a Zeeman splitting can support a topological superconducting (TS) state. The semiconductor TS state has Majorana fermions as localized zero-energy excitations at order parameter defects such as vortices and sample edges. Here we examine the effects of quenched disorder from the semiconductor surface on the stability of the TS state in both electron- and hole-doped semiconductors. By considering the interplay of broken time reversal symmetry (due to Z…
