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arXiv 1007.3309cond-mat.mes-hall
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无序和相互作用对掺杂石墨烯中Anderson跃迁的影响

The effects of disorder and interactions on the Anderson transition in doped Graphene

Yun Song, Hongkang Song, Shiping Feng

摘要:

我们对无序对石墨烯电子态的安德森局域化的影响进行了精确的数值研究。通过分析量子参与率倒数和几何平均态密度的标度行为,发现猝灭无序的存在可以引起Anderson金属-绝缘体跃迁。与传统的局域化图像相比,在特定的无序强度和杂质浓度下,可以观察到蜂窝晶格的四个迁移率边。考虑到相互作用对无序势的屏蔽作用,可以通过考察相互作用和无序的影响来解释水坑尺度扩大的实验结果。

英文摘要:

We undertake an exact numerical study of the effects of disorder on the Anderson localization of electronic states in graphene. Analyzing the scaling behaviors of inverse participation ratio and geometrically averaged density of states, we find that Anderson metal-insulator transition can be introduced by the presence of quenched random disorder. In contrast with the conventional picture of localization, four mobility edges can be observed for the honeycomb lattice with specific disorder strength and impurity concentration. Considering the screening effects of interactions on disorder potentials, the experimental findings of the scale enlarges of puddles can be explained by reviewing the effects of both interactions and disorder.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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