Under normal operations, memristive devices undergo variability in time and space and have internal dynamics. Interplay of memory and stochastic signal processing in memristive devices makes them candidates for performing bio-inspired tasks of information transduction and transformation, where intrinsic random behavior can be harnessed for high performance of circuits built up of individual memory storing elements. The paper discusses models of single memristive devices exhibiting both - dynamic hysteresis and Stochastic Resonance, addressing also the cooperative effect of correlated noises acting on the system and occurrence of dirty hysteretic rounding.
A Boltzmann machine whose effective "temperature" can be dynamically "cooled" provides a stochastic neural network realization of simulated annealing, which is an important metaheuristic for solving combinatorial or global optimization problems with broad applications in machine intelligence and operations research. However, the hardware realization of the Boltzmann stochastic element with "cooling" capability has never been achieved within an individual semiconductor device. Here we demonstrate a new memristive device concept based on two-dimensional material heterostructures that enables thi…
A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and chemical processes responsible for the actual switching dynamics or on multi-physical spatially resolved approaches that include the inherent stochastic behaviour of real-world memristive devices but are computationally very expensive. In contrast to the available models, we present a computationally inexpensive and robust spatially 1D model for simulating interf…
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially large variations in space and in time in these nanoscale devices. Here we show that in metal-filament based memristive devices the switching can be fully stochastic. While individual switching events are random, the distribution and probability of switching can be well predicted and controlled. Rather than trying to force high switching probabilities using …
The emergence of nano-scale memristive devices encouraged many different research areas to exploit their use in multiple applications. One of the proposed applications was to implement synaptic connections in bio-inspired neuromorphic systems. Large-scale neuromorphic hardware platforms are being developed with increasing number of neurons and synapses, having a critical bottleneck in the online learning capabilities. Spike-timing-dependent plasticity (STDP) is a widely used learning mechanism inspired by biology which updates the synaptic weight as a function of the temporal correlation betwe…
Memristive devices represent a promising technology for building neuromorphic electronic systems. In addition to their compactness and non-volatility features, they are characterized by computationally relevant physical properties, such as state-dependence, non-linear conductance changes, and intrinsic variability in both their switching threshold and conductance values, that make them ideal devices for emulating the bio-physics of real synapses. In this paper we present a spiking neural network architecture that supports the use of memristive devices as synaptic elements, and propose mixed-si…
Recent advancements in the development of memristive devices has opened new opportunities for hardware implementation of non-Boolean computing. To this end, the suitability of memristive devices for swarm intelligence algorithms has enabled researchers to solve a maze in hardware. In this paper, we utilize swarm intelligence of memristive networks to perform image edge detection. First, we propose a hardware-friendly algorithm for image edge detection based on ant colony. Second, we implement the image edge detection algorithm using memristive networks. Furthermore, we explain the impact of va…
College of Science and Engineering, James Cook University（詹姆斯库克大学科学与工程学院）；University of Michigan（密歇根大学）
Stochastic Computing (SC) is a computing paradigm that allows for the low-cost and low-power computation of various arithmetic operations using stochastic bit streams and digital logic. In contrast to conventional representation schemes used within the binary domain, the sequence of bit streams in the stochastic domain is inconsequential, and computation is usually non-deterministic. In this brief, we exploit the stochasticity during switching of probabilistic Conductive Bridging RAM (CBRAM) devices to efficiently generate stochastic bit streams in order to perform Deep Learning (DL) parameter…
Spike-based learning with memristive devices in neuromorphic computing architectures typically uses learning circuits that require overlapping pulses from pre- and post-synaptic nodes. This imposes severe constraints on the length of the pulses transmitted in the network, and on the network's throughput. Furthermore, most of these circuits do not decouple the currents flowing through memristive devices from the one stimulating the target neuron. This can be a problem when using devices with high conductance values, because of the resulting large currents. In this paper we propose a novel circu…
Passive crossbar arrays based upon memristive devices, at crosspoints, hold great promise for the future high-density and non-volatile memories. The most significant challenge facing memristive device based crossbars today is the problem of sneak-path currents. In this paper, we investigate a memristive device with intrinsic rectification behavior to suppress the sneak-path currents in crossbar arrays. The device model is implemented in Verilog-A language and is simulated to match device characteristics readily available in the literature. Then, we systematically evaluate the read operation pe…
The interest in memristors has risen due to their possible application both as memory units and as computational devices in combination with CMOS. This is in part due to their nonlinear dynamics, and a strong dependence on the circuit topology. We provide evidence that also purely memristive circuits can be employed for computational purposes. In the present paper we show that a polynomial Lyapunov function in the memory parameters exists for the case of DC controlled memristors. Such Lyapunov function can be asymptotically approximated with binary variables, and mapped to quadratic combinator…
The memristor can be used as non volatile memory (NVM) and for emulating neuron behavior. It has the ability to switch between low resistance $R_{on}$ and high resistance values $R_{off}$, and exhibit the synaptic dynamic behaviour such as potentiation and depression. This paper presents a study on potentiation and depression of memristors in Quad Flat Pack. A comparison is drawn between the memristors with and without the impact of parasitics of packaging, using measured data and equivalent circuit models. The parameters in memristor and packaging models for the SPICE simulations were determi…
The areal footprint of memristors is a key consideration in material-based neuromorophic computing and large-scale architecture integration. Electronic transport in the most widely investigated memristive devices is mediated by filaments, posing a challenge to their scalability in architecture implementation. Here we present a compelling alternative memristive device and demonstrate that areal downscaling leads to enhancement in memristive memory window, while maintaining analogue behavior, contrary to expectations. Our device designs directly integrated on semiconducting Nb-SrTiO$_3$ allows l…
Highly accurate and predictive models of resistive switching devices are needed to enable future memory and logic design. Widely used is the memristive modeling approach considering resistive switches as dynamical systems. Here we introduce three evaluation criteria for memristor models, checking for plausibility of the I-V characteristics, the presence of a sufficiently non-linearity of the switching kinetics, and the feasibility of predicting the behavior of two anti-serially connected devices correctly. We analyzed two classes of models: the first class comprises common linear memristor mod…
Deep 'Analog Artificial Neural Networks' (ANNs) perform complex classification problems with remarkably high accuracy. However, they rely on humongous amount of power to perform the calculations, veiling the accuracy benefits. The biological brain on the other hand is significantly more powerful than such networks and consumes orders of magnitude less power, indicating us about some conceptual mismatch. Given that the biological neurons communicate using energy efficient trains of spikes, and the behavior is non-deterministic, incorporating these effects in Deep Artificial Neural Networks may …
The rapidly expanding hardware-intrinsic security primitives are aimed at addressing significant security challenges of a massively interconnected world in the age of information technology. The main idea of such primitives is to employ instance-specific process-induced variations in electronic hardware as a source of cryptographic data. Among the emergent technologies, memristive devices provide unique opportunities for security applications due to the underlying stochasticity in their operation. Herein, we report a prototype of a robust, dense, and reconfigurable physical unclonable function…
We experimentally demonstrate classification of 4x4 binary images into 4 classes, using a 3-layer mixed-signal neuromorphic network ("MLP perceptron"), based on two passive 20x20 memristive crossbar arrays, board-integrated with discrete CMOS components. The network features 10 hidden-layer and 4 output-layer analog CMOS neurons and 428 metal-oxide memristors, i.e. is almost an order of magnitude more complex than any previously reported functional memristor circuit. Moreover, the inference operation of this classifier is performed entirely in the integrated hardware. To deal with larger cross…
Over the last decade, memristive devices have been widely adopted in computing for various conventional and unconventional applications. While the integration density, memory property, and nonlinear characteristics have many benefits, reducing the energy consumption is limited by the resistive nature of the devices. Memcapacitors would address that limitation while still having all the benefits of memristors. Recent work has shown that with adjusted parameters during the fabrication process, a metal-oxide device can indeed exhibit a memcapacitive behavior. We introduce novel memcapacitive logi…
The University of Hong Kong（香港大学）；Hewlett Packard Labs, Hewlett Packard Enterprise（慧与（HPE）惠普实验室）；University of Notre Dame（圣母大学）；Forschungszentrum Jülich GmbH（于利希研究中心）；RWTH Aachen University（亚琛工业大学）
Lifelong on-device learning is a key challenge for machine intelligence, and this requires learning from few, often single, samples. Memory augmented neural network has been proposed to achieve the goal, but the memory module has to be stored in an off-chip memory due to its size. Therefore the practical use has been heavily limited. Previous works on emerging memory-based implementation have difficulties in scaling up because different modules with various structures are difficult to integrate on the same chip and the small sense margin of the content addressable memory for the memory module …
A large effort is devoted to the research of new computing paradigms associated to innovative nanotechnologies that should complement and/or propose alternative solutions to the classical Von Neumann/CMOS association. Among various propositions, Spiking Neural Network (SNN) seems a valid candidate. (i) In terms of functions, SNN using relative spike timing for information coding are deemed to be the most effective at taking inspiration from the brain to allow fast and efficient processing of information for complex tasks in recognition or classification. (ii) In terms of technology, SNN may be…
Interfacial and bulk switching MoS2 memristors for an all-2D reservoir computing framework
Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai, India（电子工程系，印度理工学院马德拉斯学院，钦奈，印度）；Department of Physics, Indian Institute of Technology Madras, Chennai, India（物理系，印度理工学院马德拉斯学院，钦奈，印度）；Center for Nano Science and Engineering, Indian Institute of Science, Bangalore, India（纳米科学与工程中心，印度科学研究院，班加罗尔，印度）；The Pennsylvania State University, University Park, PA, USA（宾夕法尼亚州立大学，大学公园，宾夕法尼亚州，美国）
Measurement of the Crystallization and Phase Transition of Niobium Dioxide Thin-Films for Neuromorphic Computing Applications Using a Tube Furnace Optical Transmission System
Low-Power Control of Resistance Switching Transitions in First-Order Memristors
Institute of Physics, Opole University（奥波莱大学物理研究所）；Department of Electronics and Telecommunications Politecnico di Torino（都灵理工大学电子与电信系）；Department of Physics and Astronomy, University of South Carolina（南卡罗来纳大学物理与天文学系）
