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arXiv 2402.04848cs.ETcond-mat.mes-hall
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用于硬件安全原语与神经形态计算系统的忆阻器件非线性行为

Nonlinear behavior of memristive devices for hardware security primitives and neuromorphic computing systems

Sahitya Yarragolla, Torben Hemke, Fares Jalled, Tobias Gergs, Jan Trieschmann, Tolga Arul, Thomas Mussenbrock

AI总结:

本研究针对忆阻器件非线性行为,采用考虑电容与惯性效应的物理启发紧凑模型仿真界面型RRAM,匹配实验数据,揭示频率升高下的特性转变,并提出将频谱作为器件指纹的硬件安全应用方案。

摘要:

非线性特性是实现硬件安全原语或神经形态计算系统的关键特征。所有忆阻器件的核心特性正是其电流-电压特性中呈现的这种非线性行为。为理解该非线性行为,我们必须明确这类器件中电阻效应、电容效应与惯性(虚拟电感)效应的共存机制,这些效应源自忆阻器件内部相应的物理与化学过程。本研究采用一种受物理启发的紧凑模型,对Au/BiFeO₃/Pt/Ti、Au/NbₓOᵧ/Al₂O₃/Nb等界面型RRAM(阻变存储器)进行建模与仿真,同时纳入了电容效应与惯性效应的建模。仿真得到的电流-电压特性与实验数据吻合良好,且能准确捕捉由电容和电感效应产生的非过零迟滞现象。本研究考察了两种器件在频率升高时的响应,发现其非线性行为发生转变,表现为迟滞范围缩小,且通过内部状态吸引子可观测到混沌行为增强。采用不同幅值和频率的正弦输入电压开展的傅里叶级数分析表明,谐波或频率分量会对RRAM的工作性能产生显著影响。此外,我们提出并验证了将频谱作为忆阻器件指纹之一的应用方案。

英文摘要:

Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage characteristics. To comprehend the nonlinear behavior, we have to understand the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in these devices. These effects originate from corresponding physical and chemical processes in memristive devices. A physics-inspired compact model is employed to model and simulate interface-type RRAMs such as Au/BiFeO$_{3}$/Pt/Ti, Au/Nb$_{\rm x}$O$_{\rm y}$/Al$_{2}$O$_{3}$/Nb, while accounting for the modeling of capacitive and inertia effects. The simulated current-voltage characteristics align well with experimental data and accurately capture the non-zero crossing hysteresis generated by capacitive and inductive effects. This study examines the response of two devices to increasing frequencies, revealing a shift in their nonlinear behavior characterized by a reduced hysteresis range and increased chaotic behavior, as observed through internal state attractors. Fourier series analysis utilizing a sinusoidal input voltage of varying amplitudes and frequencies indicates harmonics or frequency components that considerably influence the functioning of RRAMs. Moreover, we propose and demonstrate the use of the frequency spectra as one of the fingerprints for memristive devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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