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arXiv 2309.05723cond-mat.mes-hall
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拓扑绝缘体体态引起的自旋霍尔效应:守恒自旋电流的外在贡献

Spin-Hall effect due to the bulk states of topological insulators: Extrinsic contribution to the conserved spin current

James H. Cullen, Dimitrie Culcer

AI总结:

本文采用完全量子力学形式计算了拓扑绝缘体体态的外在自旋霍尔效应,发现侧跳等外在无序贡献与内在贡献量级相当,但总自旋磁化率过小,对自旋力矩贡献可忽略不计。

摘要:

近期对自旋力矩的大量研究伴随着对自旋霍尔效应兴趣的复兴。这种效应促成了许多材料中的自旋力矩,包括拓扑绝缘体/铁磁体器件、Weyl半金属和范德华异质结构。通常,相互竞争的自旋力矩机制的相对大小仍然知之甚少。尽管关于守恒自旋电流的评估正在开始形成共识,但外在无序机制在自旋霍尔效应中的作用尚未得到澄清。在这项工作中,我们对外在自旋霍尔效应进行了全面的计算,同时以拓扑绝缘体的体态作为原型系统,并采用完全量子力学形式来计算守恒自旋电流。我们对守恒自旋电流的计算采用了描述拓扑绝缘体体态的4x4 k.p Hamiltonian。同时,我们基于通过Schrieffer-Wolf变换获得的等效2x2 Hamiltonian,对计算出的守恒自旋电流提供了定性解释。我们发现,由侧跳、斜散射及相关机制驱动的守恒自旋电流的外在贡献,与内在贡献的量级相当,因此在寻求理解实验时,将此类无序效应纳入考量至关重要。在所考虑的散射效应中,侧跳散射是外在自旋霍尔效应的主要贡献者。此处计算的总自旋磁化率太小,无法解释实验测得的自旋力矩,因此我们预计自旋霍尔效应对拓扑绝缘体结构中自旋力矩的贡献可以忽略不计。

英文摘要:

The substantial amount of recent research into spin torques has been accompanied by a revival of interest in the spin-Hall effect. This effect contributes to the spin torque in many materials, including topological insulator/ferromagnet devices, Weyl semimetals, and van der Waals heterostructures. In general the relative sizes of competing spin torque mechanisms remain poorly understood. Whereas a consensus is beginning to emerge on the evaluation of a conserved spin current, the role of extrinsic disorder mechanisms in the spin-Hall effect has not been clarified. In this work we present a comprehensive calculation of the extrinsic spin Hall effect while focussing on the bulk states of topological insulators as a prototype system and employing a fully quantum mechanical formalism to calculate the proper spin current. Our calculation of the proper spin current employs a 4x4 k.p Hamiltonian describing the bulk states of topological insulators. At the same time, we provide a qualitative explanation of the proper spin currents calculated based on an effective $2\times2$ Hamiltonian obtained via a Schrieffer-Wolf transformation. We find that the extrinsic contribution to the proper spin current, driven by side jump, skew scattering and related mechanisms, is of a comparable magnitude to the intrinsic contribution, making it vital to take such disorder effects into account when seeking to understand experiments. Among the scattering effects considered, side jump scattering is the primary contributor to the extrinsic spin Hall effect. The total spin susceptibility calculated here is too small to explain experimentally measured spin torques, hence we expect the spin Hall effect to make a negligible contribution to the spin torque in topological insulator structures.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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