薄膜制备的MnSi-nanostructures：磁输运和霍尔效应
MnSi-nanostructures obtained from thin films: magnetotransport and Hall effect
摘要：
本文比较研究了体相、薄膜和纳米结构MnSi的磁输运特性，包括霍尔效应。为了将我们的结果与已发表的数据相关联，我们对材料进行了广泛的表征，从而建立了相对良好的样品质量。我们的分析表明，特别是对于薄膜和纳米结构的材料，有外在和内在的贡献的电子输运性质，通过建模的数据，我们分离出来。最后，我们讨论了我们的霍尔效应数据的纳米结构的MnSi下考虑的外部贡献和相对于在skyrmionic相的拓扑霍尔效应的检测的问题。
英文摘要：
We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic phase.
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