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arXiv 1002.1579cond-mat.mes-hall
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基于广义主方程的半导体纳米结构的含时磁输运

Time-dependent magnetotransport in semiconductor nanostructures via the generalized master equation

Vidar Gudmundsson, Chi-Shung Tang, Cosmin Mihai Gainar, Valeriu Moldoveanu, Andrei Manolescu

摘要:

在垂直磁场存在下,电子通过纳米尺度上的二维半导体结构的传输取决于系统的几何形状、引线和磁长度的相互作用。我们使用广义主方程(GME)的形式主义来描述通过系统的运输,而不诉诸马尔可夫近似。耦合到引线的结果,在弹性和非弹性过程中的系统中,所描述的高阶的GME形式主义的积分-微分方程。系统和引线的几何细节在电子通过它们的传输上留下了指纹。的GME形式主义可以用来描述初始瞬态政权后立即耦合的导线系统和稳定状态后实现了较长的时间。

英文摘要:

Transport of electrons through two-dimensional semiconductor structures on the nanoscale in the presence of perpendicular magnetic field depends on the interplay of geometry of the system, the leads, and the magnetic length. We use a generalized master equation (GME) formalism to describe the transport through the system without resorting to the Markov approximation. Coupling to the leads results in elastic and inelastic processes in the system that are described to a high order by the integro-differential equation of the GME formalism. Geometrical details of systems and leads leave their fingerprints on the transport of electrons through them. The GME formalism can be used to describe both the initial transient regime immediately after the coupling of the leads to the system and the steady state achieved after a longer time.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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