Previous studies have demonstrated spin-orbit torque (SOT) switching of Mn3Sn where the spin polarization lies in the kagome plane (configuration I). However, the critical current density ($ J_{crit}$) is unrealistically large ($ J_{crit}$=$ 10^{14}$ A/$ m^2$) and independent on the external field ($ H_{ext}$). The stabilized magnetic state also depends on the initial state. These features conflict with the ferromagnet (FM) switching scheme as claimed in those studies, and thus call for other explanations. Alternatively, the system with the spin polarization perpendicular to the kagome plane (configuration II) is more like the FM based system since the spin polarization is orthogonal to all magnetic moments. In this work, we show SOT switching of Mn3Sn in configuration II. Similar to the FM, Jcrit and Hext are in the order of $ 10^{10}$ A/$ m^2$ and hundreds of Oersted, respectively. The switching result is also independent of the initial state. Interestingly, the unique spin structure of Mn3Sn also leads to distinct features from FM systems. We demonstrate that Jcrit increases linearly with Hext, and extrapolation gives ultralow $ J_{crit}$ for the field-free switching system. In addition, the switching polarity is opposite to the FM. We also provide the switching phase diagram as a guideline for experimental demonstration. Our work provides comprehensive understanding for the switching mechanism in both configurations. The switching protocol proposed in this work is more advantageous in realistic spintronic applications. We also clearly reveal the fundamental difference between FM and noncollinear antiferromagnetic switching.
We theoretically studied the thermally assisted spin torque switching of a synthetic free layer and showed that the switching time is minimized if the condition H_J=|H_s|/(2 alpha) is satisfied, where H_J, H_s and alpha are the coupling field of two ferromagnetic layers, the amplitude of the spin torque, and the Gilbert damping constant. We also showed that the coupling field of the synthetic free layer can be determined from the resonance frequencies of the spin-torque diode effect.
In recent years antiferromagnets (AFMs) have become very promising for nanoscale spintronic applications due to their unique properties such as THz dynamics and absence of stray fields. Manipulating antiferromagnetic textures is currently, however, limited to very few exceptional material symmetry classes allowing for staggered torques on the magnetic sublattices. In this work, we predict for kagome AFMs with broken mirror symmetry a new coupling mechanism between antiferromagnetic domain walls (DWs) and spin currents, produced by the relativistic Dzyaloshinskii-Moriya interaction (DMI). We mi…
Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that switching with perpendicularly polarized current by short pulses and free precession requires smaller time and energy than spin torque switching with collinear in plane spin polarization; it is also found to be superior to other kinds of memories. We study the tolerances of switching to the magnitude of current and pulse duration. An increased Gilbert dampi…
A common ploy to reduce the switching current and energy dissipation in spin-transfer-torque driven magnetization switching of shape-anisotropic single-domain nanomagnets is to employ magnets with low saturation magnetization $M_s$ and high shape-anisotropy. The high shape-anisotropy compensates for low $M_s$ to keep the static switching error rate constant. However, this ploy increases the switching delay, its variance in the presence of thermal noise, and the dynamic switching error rate. Using the stochastic Landau-Lifshitz-Gilbert equation with a random torque emulating thermal noise, we s…
Spin torque majority gates are modeled and several regimes of magnetization switching (some leading to failure) are discovered. The switching speed and noise margins are determined for STMGs and an adder based on it. With switching time of 3ns at current of 80uA, the adder computational throughput is comparable to that of a CMOS adder.
In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves para…
The spin torque switching rate of an in-plane magnetized system in the presence of an applied field is derived by solving the Fokker-Planck equation. It is found that three scaling currents are necessary to describe the current dependence of the switching rate in the low-current limit. The dependences of these scaling currents on the applied field strength are also studied.
We study the influence of the spin torque, which depends on the space and time derivative of magnetization, on magnetization reversal time in a ferromagnetic fine particle. The spin torque operates to dissipate the angular momentum of the magnetization precession, and the torque increases in a spin vortex structure. We calculate the magnetization reversal time under a DC magnetic field using the Landau-Lifshitz-Gilbert equation containing a spin torque term. We found that the spin torque changes the magnetization switching speed significantly during the reversal process by maintaining a spin v…
We apply a recently developed quantum theory of spin transfer torque to study the effect of the quantum noise in spin transfer process on the magnetization switching in spin-torque-driven devices. The quantum noise induces considerable fluctuation of the switching time at zero temperature. By including the thermal noise, the temperature dependence of the expectation value and standard deviation of the switching time are obtained in the Monte Carlo simulations, and the results are fitted to an effective first passage model. We expect that the predictions here are observable in the single-shot m…
We study current-induced switching in magnetic tunnel junctions (MTJs) in the presence of a field-like spin-transfer torque and titled pinned-layer magnetization in the high current limit at finite temperature. We consider both the Slonczewski and field-like torques with coefficients $a_J$ and $b_J $, respectively. At finite temperatures, $σ= b_J/a_J = \pm1$ leads to a smaller mean switching time compared that with $σ= 0$. The reduction of switching time in the presence of the field-like term is due to the alignment effect (for $σ> 0$) and the initial torque effect.
We report single-shot measurements of resistance versus time for thermally assisted spin-torque-driven switching in magnetic tunnel junctions. We achieve sufficient sensitivity to resolve the resistance signals leading up to switching, including the variations between individual switching events. Analyses of pre-switching thermal fluctuations allow detailed measurements of coherence times and variations in magnetization precession amplitude. We find that with a small in-plane hard-axis magnetic field the magnetization dynamics are more spatially coherent than for the case of zero field.
We studied the spin torque switching of the single free layer in the thermally activated region by numerically solving the Landau-Lifshitz-Gilbert equation. We found that the temperature dependence of the switching time of the in-plane magnetized system is nonlinear, which means $b \neq 1$. Here, $b$ is the exponent of the current term in the switching rate formula and has been widely assumed to be unity. This result enables us to evaluate the thermal stability of spintronics devices.
We theoretically study domain wall motion induced by an electric field in the quantum anomalous Hall states on a two-dimensional Kagome lattice with ferromagnetic order and spin-orbit coupling. We show that an electric charge is accumulated near the domain wall which indicates that the electric field drives both the accumulated charge and the domain wall with small energy dissipation. Using the linear response theory we compute the non-equilibrium spin density which exerts a non-adiabatic spin transfer torque on textures of the local magnetization. This torque emerges even when the bulk is ins…
The current dependence of the switching barrier for spin torque switching of an in-plane magnetized ferromagnet was studied. Two scaling currents, I_{c}$ and I_{c}^{*}(>I_{c}), were introduced to distinguish the magnetization stability. In the low-current region I<I_{c}, the switching barrier is linear to the current with another scaling current \tilde{I}_{c}, while such linear scaling does not hold in the high-current region I_{c} < I < I_{c}^{*}. The linear scaling is valid for the high temperature and the long current pulse duration time.
The spin torque assisted thermal switching of the single free layer was studied theoretically. Based on the rate equation, we derived the theoretical formulas of the most likely and mean switching currents of the sweep current assisted magnetization switching, and found that the value of the exponent $b$ in the switching rate formula significantly affects the estimation of the retention time of magnetic random access memory. Based on the Fokker-Planck approach, we also showed that the value of $b$ should be two, not unity as argued in the previous works.
We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance (TMR) ratios of up to 64% at 4 monolayer (ML) tunnel barrier thickness. In this paper, the reduction of the critical switching current density is studied. By optimizing the applied bias field during DC-STT measurements, ultra low critical switching current densities of less than 20 kA/cm$^2$, even down to 9 kA/cm$^2$, are found. With the reduced switching curren…
We demonstrate magnetization switching in out-of-plane magnetized Ta\CoFeB\MgO nanowires by current pulse injection along the nanowires, both with and without a constant and uniform magnetic field collinear to the current direction. We deduce that an effective torque arising from spin-orbit effects in the multilayer drives the switching mechanism. While the generation of a component of the magnetization along the current direction is crucial for the switching to occur, we observe that even without a longitudinal field thermally generated magnetization fluctuations can lead to switching. Analys…
The field-free spin-orbit torque induced 180° reorientation of perpendicular magnetization is beneficial for the high performance magnetic memory. The antiferromagnetic material (AFM) can provide higher operation speed than the ferromagnetic counterpart. In this paper, we propose a trilayer AFM/Insulator/Heavy Metal structure as the AFM memory device. We show that the field-free switching of the AFM with perpendicular Néel vector can be achieved by using two orthogonal currents, which provide the uniform damping-like torque and stagger field-like torque, respectively. The reversible switching …
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit torque MRAM devices is that they allow a unique combination of critical ingredients: i) low resistivity required for reduced electric energy consumption during writing, ii) high TMR ratio required for efficient reading and iii) strong perpendicular magnetic anisotropy for increased thermal stability.
We simulate the spin torque-induced reversal of the magnetization in thin disks with perpendicular anisotropy at zero temperature. Disks typically smaller than 20 nm in diameter exhibit coherent reversal. A domain wall is involved in larger disks. We derive the critical diameter of this transition. Using a proper definition of the critical voltage, a macrospin model can account perfectly for the reversal dynamics when the reversal is coherent. The same critical voltage appears to match with the micromagnetics switching voltage regardless of the switching path.
We studied the magnetization reversal rates of thermally assisted spin transfer torque switching in a ferromagnetically coupled synthetic free layer theoretically. By solving the Fokker-Planck equation, we obtained the analytical expression of the switching probability for both the weak and the strong coupling limit. We found that the thermal stability is proportional to Delta_{0}(1-I/I_{c})^{2}, not Delta_{0}(1-I/I_{c}) argued by Koch et al. [Phys. Rev. Lett. 92, 088302 (2004)], where I and I_{c} are the electric current and the critical current of spin transfer torque switching at absolute z…
Dependence of the thermally assisted spin torque switching probability on the sweep electric current was investigated theoretically. The analytical expressions of the switching times for $b=1$ and $b=2$ are derived based on the rate equation, where $b$ is the exponent of the current term in the switching rate. The switching current is approximately proportional to the temperature $T$ and the logarithm of the sweep rate $v$ for both $b=1$ and $b=2$ in the experimentally performed ranges of $T$ and $v$. Experiments in very low temperature range are required to determine the exponent $b$.
We report that synthetic antiferromagnets (SAFs) can be efficiently switched by spin-orbit torques (SOTs) and the switching scheme does not obey the usual SOT switching rule. We show that both the positive and negative spin Hall angle (SHA)-like switching can be observed in Pt/SAF structures with only positive SHA, depending on the strength of applied in-plane fields. A new switching mechanism directly arising from the asymmetric domain expansion is proposed to explain the anomalous switching behaviors. Contrary to the macrospin-based switching model that the SOT switching direction is determi…
This is a reply to a comment on our work recently posted in arXiv. To our knowledge, this comment has not been published anywhere else. We show that the points raised in the comment are invalid
In this article we analyze by modeling two possible mechanisms for magnetization switching using spin orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free magnetization switching due to a tilt of the anisotropy direction against the use of an antiferromagnetic bias field. Simple results obtained analytically show that a bias field not only causes the magnetization reversal but also reduces the corresponding energy barrier. The critical current required for magnetization switching is analyzed on the basis of a macrosp…
We present experimental results and macrospin simulations of the switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. At $T=4$ K we demonstrate: high speed deterministic switching at short pulse lengths - down to 100 ps - with sufficient measurement statistics to establish a switching error rate of $10^{-5}$; coherent precessional switching at longer times; and ensemble decoherence effects at even longer times. Finite temperature macrospin models capture th…
It is demonstrated by means of the optimal control theory that the energy cost of the spin-orbit torque induced reversal of a nanomagnet with perpendicular anisotropy can be strongly reduced by proper shaping of both in-plane components of the current pulse. The time-dependence of the optimal switching pulse that minimizes the energy cost associated with Joule heating is derived analytically in terms of the required reversal time and material properties. The optimal reversal time providing a tradeoff between the switching speed and energy efficiency is obtained. A sweet-spot balance between th…
This paper analyzes write errors in spin torque switching due to thermal fluctuations in a system with Perpendicular Magnetic Anisotropy (PMA). Prior analytical and numerical methods are summarized, a physics based Fokker-Planck Equation (FPE) chosen for its computational efficiency and broad applicability to all switching regimes. The relation between write error slope and material parameters is discussed in detail to enable better device engineering and optimization. Finally a 2D FPE tool is demonstrated that extends the applicability of FPE to write error in non PMA systems with built-in as…
We explore spin-torque induced magnetic reversal in magnetic tunnel junctions using combined AC and DC spin-current pulses. We calculate the optimal pulse times and current strengths for both AC and DC pulses as well as the optimal AC signal frequency, needed to minimize the Joule heat lost during the switching process. The results of this optimization are compared against numeric simulations. Finally we show how this optimization leads to different dynamic regimes, where switching is optimized by either a purely AC or DC spin-current, or a combination AC/DC spin-current, depending on the anis…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale performance with low write error rates. Here we demonstrate a strategy to simultaneously enhance the interfacial magnetic anisotropy energy and suppress interfacial spin memory loss by introducing sub-atomic and monatomic layers of Hf at the top and bottom interfaces of the ferromagnetic free layer of an in-plane magnetized three-terminal MTJ device. When combined w…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer dev…
The current dependence of the spin torque switching rate in a thermally activated region of an in-plane magnetized system was studied. The logarithm of the switching rate depended nonlinearly on current in the high-current region, I_{c} < I < I_{c}^{*}, where I_{c} and I_{c}^{*} are critical currents distinguishing the stability of the magnetization. We also found that the attempt frequency had a minimum around I_{c}, and that the attempt frequency at I_{c} was three orders of magnitude smaller than that at zero current, contrary to the assumption in previous analyses of experiments that it re…
We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the presence of domain walls in junctions of various sizes. In the antiparallel (AP) to parallel (P) switching, a nucleation phase is followed by an irreversible flow of a wall through the sample at an average velocity of 40 m/s with back and forth oscillation movements indicating a Walker propagation regime. A model with a single-wall locally responding to the sp…
The relative contributions of in-plane (damping-like) and out-of-plane (field-like) spin-transfer-torques in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the transformed Landau-Lifshitz (LL) equation with the STT terms. It is demonstrated that in a pMTJ structure obeying macrospin dynamics, the out-of-plane torque influences the precession frequency but it does not contribute significantly to the STT switching process (in particular to the switching time and switching current density), which is mostly determined b…
We simulate the switching behavior of nanoscale synthetic antiferromagnets (SAFs), inspired by recent experimental progress in spin-orbit-torque switching of crystal antiferromagnets. The SAF consists of two ferromagnetic thin films with in-plane biaxial anisotropy and interlayer exchange coupling. Staggered field-like Rashba spin-orbit torques from the opposite surfaces of the SAF induce a canted net magnetization, which triggers an orthogonal torque that drives 90$^\circ$ switching of the Néel vector. Such dynamics driven by the field-like spin-orbit torque allows for faster switching with i…
We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching process is domain-wall (DW) depinning by spin Hall torque via a thermally-assisted mechanism that eventually produces full reversal by domain expansion. An in-plane applied magnetic field collinear with the current is required, with the necessary field scale set by the need to overcome DW chirality imposed by the Dzyaloshinskii-Moriya interaction. Once Joule hea…
Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal spin torques (TSTs) have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fi…
Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves passing a high current across an ultrathin tunnel barrier. A small symmetry-breaking bias field is usually needed for deterministic SOT switching but it is impractical to generate the field externally for spintronic applications. Here, we demonstrate robust zero-field SOT switching of a perpendicular Co90Fe10 (CoFe) free layer where the symmetry is broken by mag…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high speed, low energy magnetic recording technologies. While fast switching has been demonstrated in three terminal magnetic tunnel junctions (3T-MTJs) through applying short voltage pulses in the heavy metal channel, detailed understanding of the switching mechanism is lacking due to the complexity of the multi-layered magnetic structure and the three-terminal geome…
We investigate the current-induced switching of the Neel order in NiO(001)/Pt heterostructures,which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse resistances are found at room temperature for a current threshold lying in the range of 10^7 A/cm^2. The order-parameter switching is ascribed to the antiferromagnetic dynamics triggered by the (current-induced) antidamping torque, which orients the Neel order towards the direction of the writing current. This is in stark contrast to the case of antiferromagnets such…
Strong magnetic field pulses associated with a relativistic electron bunch can imprint switching patterns in magnetic thin films that have uniaxial in-plane anisotropy. In experiments with Fe and FeCo alloy films the pattern shape reveals an additional torque acting on magnetization during the short (in the 100fs time scale) magnetic field pulse. The magnitude of the torque is as high as 15% of the torque from the magnetic field. The torque symmetry is that of a uniaxial anisotropy along the direction of the eddy current screening the magnetic field. Spin-orbit interaction acting on the conduc…
Spin-orbit torques (SOT) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques so that the efficient SOT switching requires to understand combined effects of the two torque-components. Previous quasi-static measurements have reported an increased switching probability with the width of current pulses, as predicted with considering the damping-like torque only. Here we report a decreased switching probability at longer pulse-widths, based…
Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and better-performance SOT magnetoresistive random access memory (SOT-MRAM) as compared to the conventional type-y design. Here, we systematically investigate type-x SOT switching properties by both macrospin and micromagnetic simulations. The out-of-plane external field and anisotropy field dependence of the switching current density ($J_{sw}$) is first examined …
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions we have developed a multi-scale methodology combining the ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multi-scale approach including a discussion on a number of possible mapping schemes the ab initio spin torques into the spin dynamics. We demonstrate …
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we present a micromagnetic study of spin-torque switching in a disk-shaped element as a function of the free layer's exchange constant and disk diameter. The switching is shown to generally occur by 1) growth of the magnetization precession amplitude in the element center; 2) an instability in which the reversing region moves to the disk edge, forming a magnetic d…
Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization reversal by current pulses ranging from 180~ps to ms in Pt/Co/AlOx dots with lateral dimensions of 90~nm. We characterize the switching probability and critical current $I_c$ as function of pulse length, amplitude, and external field. Our data evidence two distinct regimes: a short-time intrinsic regime, where $I_c$ scales linearly with the inverse of the pulse le…
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and confirmed by the experiments. In this work, we theoretically and numerically investigate the switching current required for perpendicular magnetization switching in ferromagnetic trilayers. We confirm that the tilted spin polarization enables field-free deterministic switching at a lower current than conventional spin-orbit torque or spin-transfer torque sw…
Multi-rotational switching in a noncollinear antiferromagnet by spin-orbit torque
Tohoku University（东北大学）；National Institute for Materials Science（物质材料研究机构）；National Institutes for Quantum Science and Technology（量子科学技术研究开发机构）；Inamori Research Institute for Science（稻盛科学研究所）
Current-induced magnetization switching by spin-orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin-orbit torques has relied on an external injection of out-of-plane spin currents into the magnetic layer, while an external magnetic field along the electric current direction is generally required for realizing deterministic switching by SOT. Here, we report deterministic current-induced SOT full magnetization switching by lateral spin-orbit torque in zero external magnetic field. The Pt/Co/Pt magnetic …
Effects of Longitudinal Spin Current Density Gradient on Spin-Orbit Torque Switching of Perpendicular Magnetization
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences（中国科学院半导体研究所半导体物理与芯片技术国家重点实验室）；Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences（中国科学院大学材料科学与光电技术研究中心）
Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching characteristics over time, therefore, it is limited to bipolar operation where a change in polarity of the applied current or field is required for bistable switching. The coherent rotation based oscillatory switching schemes cannot be applied to SOT because the SOT switching occurs through expansion of magnetic domains. Here, we experimentally achieve oscillatory sw…
The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is further exacerbated as the dimensions of MTJ nanostructures are scaled down to tens of nanometers in diameter, as higher magnetic anisotropy materials are required to meet thermal stability requirements that demand higher switching current densities. Here, we propose a simple solution to these issues based on synthetic ferrimagnet (SFM) structures. It is common…
We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the relative amplitude of the two spin-torque contributions. This was confirmed by micromagnetic simulations. Real-time measurements of the reversal were performed with samples of low and high aspect rati…
