发表机构
Université de Lorraine; Institute of Semiconductors, Chinese Academy of Sciences; Beihang University（洛林大学; 中国科学院半导体研究所; 北京航空航天大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究展示了自旋轨道矩诱导的非对称磁化开关，源于面内有效场破坏对称性，并利用四种开关行为在单个器件中实现可重构自旋逻辑操作。
AI 中文摘要
自旋逻辑器件为实现超低功耗和非易失性信息处理提供了一条有前景的途径。在本工作中，我们演示了在面内各向异性（IMA）和垂直磁各向异性异质结构中，由自旋轨道矩诱导的无场非对称磁化开关，其特征是在相反电流极性下具有不同的临界开关电流。结合实验和宏自旋模拟表明，非对称开关源于面内有效场Hy，该场破坏了系统的Myz镜面对称性。通过控制IMA层的磁化方向，开关极性和偏置方向均可调谐。基于四种不同类型的非对称开关行为，我们在单个霍尔棒器件中实现了可重构的自旋逻辑操作。这些结果阐明了非对称磁化开关的物理起源，并展示了一种实现可重构自旋逻辑器件的方法。
英文摘要
Spin logic devices provide a promising route toward ultralow-power and nonvolatile information processing. In this work, we demonstrate field-free spin-orbit torque-induced asymmetric magnetization switching in in-plane anisotropy (IMA) and perpendicular magnetic anisotropy heterostructures, characterized by different critical switching currents under opposite current polarities. Combined experiments and macrospin simulations reveal that the asymmetric switching originates from an in-plane effective field Hy , which breaks the Myz mirror symmetry of the system. By controlling the magnetization direction of the IMA layer, both the switching polarity and bias direction can be tuned. Building on four distinct types of asymmetric switching behaviors, we realize a reconfigurable spin logic operation within a single Hall-bar device. These results clarify the physical origin of asymmetric magnetization switching and demonstrate an approach for realizing reconfigurable spin logic devices.
Journal refPhysical Review Applied, 2026, 26 (4), pp.044015
