High-quality amorphous Silicon Carbide for hybrid photonic integration at low temperature
Bruno Lopez-Rodriguez, Roald Van Der Kolk, Samarth Aggarwal, Naresh Sharma, Zizheng Li, Daniel Van Der Plaats, Thomas Scholte, Jin Chang, Silvania F. Pereira, S… 展开作者
Bruno Lopez-Rodriguez, Roald Van Der Kolk, Samarth Aggarwal, Naresh Sharma, Zizheng Li, Daniel Van Der Plaats, Thomas Scholte, Jin Chang, Silvania F. Pereira, Simon Groeblacher, Harish Bhaskaran, Iman Esmaeil Zadeh Zadeh
Integrated photonic platforms have proliferated in recent years, each demonstrating its own unique strengths and shortcomings. However, given the processing incompatibilities of different platforms, a formidable challenge in the field of integrated photonics still remains for combining the strength of different optical materials in one hybrid integrated platform. Silicon carbide is a material of great interest because of its high refractive index, strong second and third-order non-linearities and broad transparecy window in the visible and near infrared. However, integrating SiC has been difficult, and current approaches rely on transfer bonding techniques, that are time consuming, expensive and lacking precision in layer thickness. Here, we demonstrate high index Amorphous Silicon Carbide (a-SiC) films deposited at 150$^{\circ}$C and verify the high performance of the platform by fabricating standard photonic waveguides and ring resonators. The intrinsic quality factors of single-mode ring resonators were in the range of $Q_{int} = (4.7-5.7)\times10^5$ corresponding to optical losses between 0.78-1.06 dB/cm. We then demonstrate the potential of this platform for future heterogeneous integration with ultralow loss thin SiN and LiNbO$_3$ platforms.
In this work, the thermo-optic coefficient (TOC) of the silicon-rich amorphous silicon carbide (a-SiC) thin film deposited by plasma-enhanced chemical vapor deposition is characterized. We found that the TOC of the film increases as its silicon content increases. A more than three-fold improvement in the TOC is measured, reaching a TOC as high as $1.88 \times 10^{-4} K^{-1}$, which is comparable to that of crystalline silicon. An efficient thermo-optic phase shifter has also been demonstrated by integrating the silicon-rich a-SiC micro-ring structure with a NiCr heater. Its tuning efficiency $…
Silicon carbide (SiC) displays a unique combination of optical and spin-related properties that make it interesting for photonics and quantum technologies. However, guiding light by total internal reflection can be difficult to achieve, especially when SiC is grown as thin films on higher index substrates, like Silicon. Fabricating suspended, subwavelength waveguides requires a single lithography step and offers a solution to the confinement problem, while preserving the design flexibility required for a scalable and complete photonic platform. Here we present a design for such platform, that …
Wavelength-sized microdisk resonators were fabricated on a single crystalline 4H-silicon-carbide-oninsulator platform (4H-SiCOI). By carrying out microphotoluminescence measurements at room temperature, we show that the microdisk resonators support whispering-gallery modes (WGMs) with quality factors up to $5.25 \times 10^3$ and mode volumes down to $2.69 \times(λ/n)^3$ at the visible and near-infrared wavelengths. Moreover, the demonstrated wavelength-sized microdisk resonators exhibit WGMs whose resonant wavelengths compatible with the zero-phonon lines of spin defects in 4H-SiCOI, making th…
Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can enable SiC integrated photonics with quality factors exceeding $10^7$. We fabricate microring resonators with quality factors as high as 1.1 million, and observe low-threshold (8.5 $\pm$ 0.5 mW) optical parametric oscillation as well as optical microcombs spanning 200 nm. Our demonstration is an essential milestone in the development of photonic devices that h…
We report the first demonstration of integrated electro-optic (EO) phase shifters based on racetrack microresonators on a 3C-silicon-carbide-on-insulator (SiCOI) platform working at near-infrared (NIR) wavelengths. By applying DC voltage in the crystalline axis perpendicular to the waveguide plane, we have observed optical phase shifts from the racetrack microresonators whose loaded quality (Q) factors are ~ 30,000. We show voltage length-product (V$π$${\cdot}$L$π$) of 118 V${\cdot}$cm, which corresponds to an EO coefficient r$_{41}$ of 2.6 pm/V. The SiCOI platform can be used to realize tunab…
Quantum photonics plays a crucial role in the development of novel communication and sensing technologies. Color centers hosted in silicon carbide and diamond offer single photon emission and long coherence spins that can be scalably implemented in quantum networks. We develop systems that integrate these color centers with photonic devices that modify their emission properties through electromagnetically tailored light and matter interaction.
Single photon emitters (SPEs) play an important role in a number of quantum information tasks such as quantum key distributions. In these protocols, telecom wavelength photons are desired due to their low transmission loss in optical fibers. In this paper, we present a study of bright single-photon emitters in cubic silicon carbide (3C-SiC) emitting in the telecom range. We find that these emitters are photostable and bright at room temperature with a count rate of ~ MHz. Together with the fact that SiC is a growth and fabrication-friendly material, our result may pave the way for its future a…
Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techn…
In this letter, we study the near-field radiative heat transfer between two metamaterial substrates coated with silicon carbide (SiC) thin films. It is known that metamaterials can enhance the near-field heat transfer over ordinary materials due to excitation of magnetic plasmons associated with s polarization, while strong surface phonon polariton exists for SiC.By careful tuning of the optical properties of metamaterial it is possible to excite electrical and magnetic resonance for the metamaterial and surface phonon polaritons for SiC at different spectral regions, resulting in the enhanced…
Quantum sensors with solid state electron spins have attracted considerable interest due to their nanoscale spatial resolution.A critical requirement is to suppress the environment noise of the solid state spin sensor.Here we demonstrate a nanoscale thermometer based on silicon carbide (SiC) electron spins.We experimentally demonstrate that the performance of the spin sensor is robust against dephasing due to a self protected machenism. The SiC thermometry may provide a promising platform for sensing in a noisy environment ,e.g. biological system sensing.
Silicon carbide (SiC) exhibits excellent material properties attractive for broad applications. We demonstrate the first SiC optomechanical microresonators that integrate high mechanical frequency, high mechanical quality, and high optical quality into a single device. The radial-breathing mechanical mode has a mechanical frequency up to 1.69 GHz with a mechanical Q around 5500 in atmosphere, which corresponds to a mechanical f-Q product as high as 9.47x10^12 Hz. The strong optomechanical coupling allows us to efficiently excite and probe the coherent mechanical oscillation by optical waves. T…
Silicon carbide has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality silicon carbide a critical aspect for the advancement of scalable on-chip networks. In this work, we numerically design, fabricate and demonstrate the performance of monolithic metalenses from SiC suitable for on-chip optical operations. We engineer two distinct lenses, with parabolic and cubic phase profiles, operating in the near infrared spectral range, which is of interest for quantum and photonic ap…
Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing, and sensing rely on the efficient collection of color center emission into a single optical mode. Recent hardware development in this platform has focused on angle-etching processes that preserve emitter properties and produce triangularly shaped devices. However, little is known about the light propagation in this geometry. We explore the formation of photo…
An outstanding challenge for color center-based quantum information processing technologies is the integration of optically-coherent emitters into scalable thin-film photonics. Here, we report on the integration of near-transform-limited silicon vacancy (V$_{\text{Si}}$) defects into microdisk resonators fabricated in a CMOS-compatible 4H-Silicon Carbide-on-Insulator platform. We demonstrate a single-emitter cooperativity of up to 0.8 as well as optical superradiance from a pair of color centers coupled to the same cavity mode. We investigate the effect of multimode interference on the photon …
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1,400 nm diameters. We obtain high collection efficiency, up to 22 kcounts/s opti…
Localization and coherent control of 25 nuclear spins in Silicon Carbide
University of Stuttgart（斯图加特大学）；Eötvös Loránd University（罗兰大学）；MTA–ELTE Lendület “Momentum” NewQubit Research Group（匈牙利科学院-罗兰大学Lendulet“动量”NewQubit研究组）；Leibniz-Institute of Surface Engineering (IOM)（莱布尼兹表面工程研究所）；Linköping University（林雪平大学）；Max Planck Institute for solid state physics（马克斯·普朗克固体物理研究所）
Silicon carbide has recently emerged as a promising photonics material due to its unique properties, including possessing strong second- and third-order nonlinear coefficients and hosting various color centers that can be utilized for a wealth of quantum applications. Here, we report the design and demonstration of octave-spanning microcombs in a 4H-silicon-carbide-on-insulator platform for the first time. Such broadband operation is enabled by optimized nanofabrication achieving >1 million intrinsic quality factors in a 36-$μ$m-radius microring resonator, and careful dispersion engineering by…
Coupling nitrogen vacancy centers in silicon carbide to nanophotonic resonators
University of Technology Sydney（悉尼科技大学）；ARC Centre of Excellence for Transformative Meta-Optical Systems（变革性超光学系统卓越研究中心）；The Australian National University（澳大利亚国立大学）
Silicon carbide is evolving as a prominent solid-state platform for the realization of quantum information processing hardware. Angle-etched nanodevices are emerging as a solution to photonic integration in bulk substrates where color centers are best defined. We model triangular cross-section waveguides and photonic crystal cavities using Finite-Difference Time-Domain and Finite-Difference Eigensolver approaches. We analyze optimal color center positioning within the modes of these devices and provide estimates on achievable Purcell enhancement in nanocavities with applications in quantum com…
We present the design, fabrication and characterization of cubic (3C) silicon carbide microdisk resonators with high quality factor modes at visible and near infrared wavelengths (600 - 950 nm). Whispering gallery modes with quality factors as high as 2,300 and corresponding mode volumes V ~ 2 (λ/n)^3 are measured using laser scanning confocal microscopy at room temperature. We obtain excellent correspondence between transverse-magnetic (TM) and transverse-electric (TE) polarized resonances simulated using Finite Difference Time Domain (FDTD) method and those observed in experiment. These stru…
The identification of new solid-state defect qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent discovery of optically active spin states in silicon carbide thin films offers a scalable route for incorporating defect qubits into on-chip photonic devices. Here we demonstrate the use of 3C silicon carbide photonic crystal cavities for enhanced excitation of color center defect spin ensembles in order to increase measured photoluminescence signal count rates, …
