Quantum sensors with solid state electron spins have attracted considerable interest due to their nanoscale spatial resolution.A critical requirement is to suppress the environment noise of the solid state spin sensor.Here we demonstrate a nanoscale thermometer based on silicon carbide (SiC) electron spins.We experimentally demonstrate that the performance of the spin sensor is robust against dephasing due to a self protected machenism. The SiC thermometry may provide a promising platform for sensing in a noisy environment ,e.g. biological system sensing.
Color centers in solids are the fundamental constituents of a plethora of applications such as lasers, light emitting diodes and sensors, as well as the foundation of advanced quantum information and communication technologies. Their photoluminescence properties are usually studied under Stokes excitation, in which the emitted photons are at a lower energy than the excitation ones. In this work, we explore the opposite Anti-Stokes process, where excitation is performed with lower energy photons. We report that the process is sufficiently efficient to excite even a single quantum system, namely…
We demonstrate an all-optical thermometer based on an ensemble of silicon-vacancy centers (SiVs) in diamond by utilizing a temperature dependent shift of the SiV optical zero-phonon line transition frequency, $Δλ/ΔT= 6.8\,\mathrm{GHz/K}$. Using SiVs in bulk diamond, we achieve $70\,\mathrm{mK}$ precision at room temperature with a sensitivity of $360\,\mathrm{mK/\sqrt{Hz}}$. Finally, we use SiVs in $200\,\mathrm{nm}$ nanodiamonds as local temperature probes with $521\,\mathrm{ mK/\sqrt{Hz}}$ sensitivity. These results open up new possibilities for nanoscale thermometry in biology, chemistry, a…
Understanding the coordination of cell division timing is one of the outstanding questions in the field of developmental biology. One active control parameter of the cell cycle duration is temperature, as it can accelerate or decelerate the rate of biochemical reactions. However, controlled experiments at the cellular-scale are challenging due to the limited availability of biocompatible temperature sensors as well as the lack of practical methods to systematically control local temperatures and cellular dynamics. Here, we demonstrate a method to probe and control the cell division timing in C…
Versatile nanoscale sensors that are susceptible to changes in a variety of physical quantities often exhibit limited selectivity. This paper reports a novel scheme based on microwave-dressed spin states for optically probed nanoscale temperature detection using diamond quantum sensors, which provides selective sensitivity to temperature changes. By combining this scheme with a continuous pump-probe scheme using ensemble nitrogen-vacancy centers in nanodiamonds, a sub-microsecond temporal resolution with thermal sensitivity of 3.7 K$\cdot$Hz$^{-1/2}$ that is insensitive to variations in extern…
Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single photon emission, good photostability, and long spin coherence time even at room temperature. As compared to diamond which is widely used for holding Nitrogen-vacancy centers, SiC has the advantage in terms of large-scale, high-quality and low cost growth, as well as advanced fabrication technique in optoelectronics, leading to the prospects for large scale quantum engineering. In this paper, we report experimental demonstration of the generation of nanoscale…
Diamond quantum thermometry exploits the optical and electrical spin properties of colour defect centres in diamonds and, acts as a quantum sensing method exhibiting ultrahigh precision and robustness. Compared to the existing luminescent nanothermometry techniques, a diamond quantum thermometer can be operated over a wide temperature range and a sensor spatial scale ranging from nanometres to micrometres. Further, diamond quantum thermometry is employed in several application, including electronics and biology, to explore these fields with nanoscale temperature measurements. This review cover…
Quantum Noise Spectroscopy of Nanoscale Charge Defects in Silicon Carbide at Room Temperature
School of Biomedical Engineering, Division of Life Sciences and Medicine, University of Science and Technology of China（中国科学技术大学生命科学与医学部生物医学工程学院）；Laboratory of Spin Magnetic Resonance, School of Physical Sciences, Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China（中国科学技术大学物理学院自旋磁共振实验室、安徽省科学仪器开发与应用重点实验室）；Suzhou Institute for Advanced Research, University of Science and Technology of China（中国科学技术大学苏州高等研究院）；Hefei National Laboratory, University of Science and Technology of China（中国科学技术大学合肥国家实验室）
International Centre for Theory of Quantum Technologies, University of Gdańsk（格但斯克大学量子技术国际理论中心）；Dipartimento di Fisica "Aldo Pontremoli", Università degli Studi di Milano（米兰大学阿尔多·蓬特莫利物理系）
Cubic silicon carbide is an excellent platform for integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications, where divacancy qubit, that is similar to the negatively charged nitrogen-vacancy (NV) center in diamond, has favorable coherence properties. We demonstrate by means of density functional theory calculations that divacancy in 3C SiC has superior spin-stress coupling parameters and stress sensitivity for nanoscale, quantum enhanced photonic, optoelectronic and optomechanical devices.
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1,400 nm diameters. We obtain high collection efficiency, up to 22 kcounts/s opti…
Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, …
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio simulations, we show that spin-spin interactions within SiC neutral divacancies give rise to spin states with an enhanced Stark effect, sub-10**-6 strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15-36%. These results establish SiC color centers as compelling systems for sensing nanoscale fields.
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions, they are increasingly recognized as a valuable resource for quantum-information and nanoscale-sensing applications. Here, we show that individual electron spin states in highly purified monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects, these states exhibit exceptionally long ensemble Hahn-echo spin coherence,…
Scalable integration of silicon carbide color centers into nanophotonic structures
University of Stuttgart（斯图加特大学）；Center for Integrated Quantum Science and Technology（集成量子科学与技术中心）；Max Planck Institute for Solid State Research（马克斯·普朗克固体的研究研究所）；Luxembourg Institute of Science and Technology (LIST)（卢森堡科学与技术研究所）；University of Luxembourg（卢森堡大学）；Helmholtz-Zentrum Dresden-Rossendorf（德累斯顿-罗斯多夫亥姆霍兹中心）
Hybrid spin-mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with low acoustic losses, making them natural candidates for integration with high quality factor mechanical resonators. Here, we show Gaussian focusing of a surface acoustic wave in SiC, characterized by a …
The negatively-charged nitrogen vacancy (NV$^-$) centre in diamond is a remarkable optical quantum sensor for a range of applications including, nanoscale thermometry, magnetometry, single photon generation, quantum computing, and communication. However, to date the performance of these techniques using NV$^-$ centres has been limited by the thermally-induced spectral wandering of NV$^-$ centre photoluminescence due to detrimental photothermal heating. Here we demonstrate that solid-state laser refrigeration can be used to enable rapid (ms) optical temperature control of nitrogen vacancy doped…
Three-dimensional arrays of silicon transistors increase the density of bits. Solid-state qubits are much larger so could benefit even more from using the third dimension given that useful fault-tolerant quantum computing will require at least 100,000 physical qubits and perhaps one billion. Here we use laser writing to create 3D arrays of nitrogen-vacancy centre (NVC) qubits in diamond. This would allow 5 million qubits inside a commercially available 4.5x4.5x0.5 mm diamond based on five nuclear qubits per NVC and allowing $(10 μm)^3$ per NVC to leave room for our laser-written electrical con…
