Addressing the spin-valley flavors in moir'e mini-bands of MoS2
Chithra H. Sharma, Marta Prada, Jan-Hendrik Schmidt, Isabel Gonz'alez D'iaz-Palacio, Tobias Stauber, Takashi Taniguchi, Kenji Watanabe, Lars Tiemann, Robert H. Blick
The physics of moir'e superlattices and the resulting formation of mini-bands in van der Waals materials have opened up an exciting new field in condensed matter physics. These systems exhibit a rich phase diagram of novel physical phenomena and exotic correlated phases that emerge in the low-dispersing bands. Transition metal dichalcogenides, in particular, molybdenum disulfide (MoS2), are potential candidates to extend the studies on moir'e electronics beyond graphene. Our transport spectroscopy measurements and analysis reveal a correlation-driven phase transition and the emergence of discrete mini-bands in MoS2 moir'e superlattices that remained elusive so far. We resolve these mini-bands arising from quantum mechanical tunneling through Schottky barriers between the MoS2 and its metallic leads. Energy scales deduced from a first approach exhibit an astounding agreement with our experimental observations. The behavior under thermal activation suggests a Lifshitz phase transition at low temperatures that is driven by a complete spin-valley symmetry breaking. These intriguing observations bring out the potential of twisted MoS2 to explore correlated electron states and associated physics.
Umklapp-Enhanced Interlayer Valley Drag in Moiré Bilayers
Institute of Mathematical Sciences（数学科学研究所）；Tata Institute of Fundamental Research（塔塔基础研究所）；Indiana University（印第安纳大学）；Indian Institute of Technology - Kanpur（坎普尔印度理工学院）
Contrasting $Γ$- and K-Valley Moiré Physics in Twisted Monolayer/Bilayer WSe$_2$
University of California, Los Angeles（加州大学洛杉矶分校）；Max Planck Institute for Chemical Physics of Solids（马克斯·普朗克固体化学物理研究所）；University of Wisconsin-Madison（威斯康星大学麦迪逊分校）；National Institute for Materials Science（国立材料研究所）
Robust valley-polarized excitonic Mott states and doublons enabled by stacking-controlled moiré geometry
National Taiwan University（国立台湾大学）；University of Washington（华盛顿大学）；National Institute for Materials Science（国家材料研究所）；Arizona State University（亚利桑那州立大学）
Hidden valley dynamics behind vanishing circular polarization in moiré excitons
National Institute for Materials Science（物质材料研究机构）；Graduate School of Chemical Sciences and Engineering, Hokkaido University（北海道大学化学理工学研究科）；University of Tsukuba（筑波大学）
Chern-Textured Exciton Insulators with Valley Spiral Order in Moiré Materials
Rudolf Peierls Centre for Theoretical Physics（鲁道夫·皮尔斯理论物理中心）；Princeton Center for Theoretical Science, Princeton University（普林斯顿大学理论科学中心）；Department of Physics, University of Zurich（苏黎世大学物理系）；Department of Physics, Ghent University（根特大学物理系）
Unveiling the Spin-Valley Structure of Dipolar Exciton Ladders in R-stacked WSe$_2$/WS$_2$ Moiré Heterobilayers
Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University（赫瑞-瓦特大学光子与量子科学研究所）；Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（物质材料纳米结构研究中心）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（电子与光学材料研究中心）
研究 R 堆叠 WSe₂/WS₂ 莫尔异质双层中偶极激子阶梯的自旋-谷结构，用螺旋度分辨磁光致发光确定其微观起源，明确不同电荷填充时各激子态情况，建立超越简单占据数物理的自旋-谷分辨图像。
Magnetic Field Reorganization of Electronic States in Moiré Bilayer Graphene
Department of Physics, University of California, Santa Barbara（加州大学圣塔芭芭拉分校物理系）；Applied Materials（应用材料公司）；Department of Physics and Astronomy, University of California, Los Angeles（加州大学洛杉矶分校物理与天文学系）；National Institute for Materials Science（国立材料研究所）
Valley polarization of moiré interlayer exciton complexes driven by many-body interactions
Technical University of Munich（慕尼黑工业大学）；Munich Center for Quantum Science and Technology (MCQST)（慕尼黑量子科学与技术中心）；National Institute for Materials Science（物质材料研究机构）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（物质材料研究机构电子光学材料研究中心）；Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（物质材料研究机构材料纳米架构研究中心）
A Catalogue of Topological Moiré Bands in Twisted Semiconductors
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所与凝聚态物理北京国家实验室）；University of Chinese Academy of Sciences（中国科学院大学）；Condensed Matter Physics Data Center of Chinese Academy of Sciences（中国科学院凝聚态物理数据中心）
Chern-Selective multi-valley Flat Bands in Twisted Mono-Bilayer and Mono-Trilayer MoTe$_2$
Beijing National Laboratory for Condensed Matter Physics and Institute of physics, Chinese academy of sciences（中国科学院物理研究所）；University of Chinese academy of sciences（中国科学院大学）；Center for Computational Quantum Physics, Flatiron Institute（平顿研究所计算量子物理中心）；Department of Physics, Princeton University（普林斯顿大学物理系）；Laboratoire de Physique de l’Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité（巴黎高等师范学院物理实验室）
Supermoiré domain-resolved effective Hamiltonians and valley topology in helical multilayer graphene
Seoul National University（首尔大学）；Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST（加泰罗尼亚纳米科学和纳米技术研究所（ICN2，西班牙高等科学研究委员会和巴塞罗那独立系统大学））；University of Seoul（首尔大学）
Topological superconductivity, ferromagnetism, and valley-polarized phases in moire systems: Renormalization group analysis for twisted double bilayer graphene
