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arXiv 2405.12901cond-mat.mes-hall
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大角度非公度莫尔同质双层中能谷相干暗激子的扩散

Diffusion of valley-coherent dark excitons in a high-angle incommensurate Moiré homobilayer

Arnab Barman Ray, Trevor Ollis, Sethuraj K. R., Anthony Nickolas Vamivakas

AI总结:

本研究在大角度n型掺杂二硒化钼扭转同质双层中发现增亮的暗层内激子,其扩散长度超4微米且具稳健能谷相干性,为能谷电子器件提供新方向。

摘要:

过去几年,扭转电子学领域尤其是过渡金属二硫化物小角度扭转双层结构的研究兴趣与投入大幅增长。研究已证实这类新型材料平台可承载激子型量子发射体周期阵列、长寿命层间激子以及奇异多体态。尽管人们对这类异质结构的认知仍存在大量空白,但大角度非公度双层结构领域的探索更为不足。当扭转角大于几度时,受制备技术限制,这类双层结构的周期性呈现无序特征,使得系统本质上为非周期且非公度的。本研究中,我们在n型掺杂二硒化钼(MoSe₂)扭转同质双层中观测到一种被增亮的暗层内激子的出现。研究表明,与亮三激子或亮激子相比,该暗激子在激发光斑范围内的扩散效率更高,扩散长度可达4微米以上。温度依赖光谱提供了佐证,同时揭示出一种被增亮的暗三激子。几乎令人费解的是,该暗激子展现出稳健的能谷相干性,我们将其归因于强介电对比度导致的面外反射对称性缺失,进而引发自旋分辨导带的微小混合。我们的研究结果揭示了大角度体系物理特性的丰富性,同时为可利用这类能谷特性更稳健的“混合”暗激子的能谷电子学器件开辟了新机遇。

英文摘要:

The last few years have witnessed a surge in interest and research efforts in the field of twistronics, especially in low-angle twisted bilayers of transition metal dichalocogenides. These novel material platforms have been demonstrated to host periodic arrays of excitonic quantum emitters, interlayer excitons with long lifetimes, and exotic many-body states. While much remains to be known and understood about these heterostructures, the field of large-angle, incommensurate bilayers is even less explored. At twist angles larger than a few degrees, the presence of periodicity in these bilayers becomes chaotic, making the systems essentially aperiodic and incommensurate in nature due to the limitations of fabrication techniques. In this work, we demonstrate the emergence of a brightened dark intralayer exciton in twisted n-doped molybdenum diselenide homobilayer. We show that this dark exciton diffuses across the excitation spot more efficiently as compared to bright trions or excitons, reaching diffusion lengths greater than 4 microns. Temperature-dependent spectra provide corroborative evidence and reveal a brightened dark trion. Almost inexplicably, this dark exciton showcases a robust valley coherence, which we attribute to a small mixing of the spin-resolved conduction bands due to an absence of out-of-plane reflection symmetry arising from a strong dielectric contrast. Our results reveal some of the richness of the physics of these large-angle systems while uncovering new opportunities for valleytronic devices that may utilize these more valley-robust "mixed" dark excitons.

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