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arXiv 2203.04726cond-mat.mes-hall
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均质双层半导体中莫尔赝电磁场的超快控制

Ultrafast control of moiré pseudo-electromagnetic field in homobilayer semiconductors

Dawei Zhai, Wang Yao

摘要:

在均质双层半导体的长波长莫尔条纹中,电子的层赝自旋受到相当大的塞曼场的影响,塞曼场在空间上受到莫尔条纹中层间耦合的调制。通过这种空间调制与均匀的,但动态可调的组件从平面外的电场的干扰,我们表明,整个塞曼场的时空分布,因此具有拓扑结构,可以控制在超快的时间尺度由太赫兹场或层间偏置。这种动态调制导致低能载流子出现面内电场,这与它们的实空间贝里曲率--莫尔磁场--通过法拉第感应定律有关。这些在谷的时间反转对处具有相反符号的出射电磁场可以被利用来在偏置脉冲或太赫兹辐射的控制下操纵莫尔景观中的谷和自旋。

英文摘要:

In long-wavelength moiré patterns of homobilayer semiconductors, the layer pseudospin of electrons is subject to a sizable Zeeman field that is spatially modulated from the interlayer coupling in moiré. By interference of this spatial modulation with a homogeneous but dynamically tunable component from out-of-plane electric field, we show that the spatial-temporal profile of the overall Zeeman field therefore features a topological texture that can be controlled in an ultrafast timescale by a terahertz field or an interlayer bias. Such dynamical modulation leads to the emergence of an in-plane electric field for low energy carriers, which is related to their real space Berry curvature -- the moiré magnetic field -- through the Faraday's law of induction. These emergent electromagnetic fields, having opposite signs at the time reversal pair of valleys, can be exploited to manipulate valley and spin in the moiré landscape under the control by a bias pulse or a terahertz irradiation.

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