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arXiv 2302.04861cond-mat.mtrl-sci
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立方和六方半导体LiZnX(X = P, As, Sb)中电子极化与位移电流的相关性

Correlation between electronic polarization and shift current in cubic and hexagonal semiconductors LiZn$X$ ($X$ = P, As, Sb)

Urmimala Dey, Jeroen van den Brink, Rajyavardhan Ray

AI总结:

本文通过密度泛函计算研究LiZnX(X=P, As, Sb)半导体的位移电流,发现其电导率比已知材料高约一个数量级,并揭示了位移电流响应与电子极化之间的定量关系。

摘要:

非中心对称半导体中的整流体光伏效应(BPVE),也称为位移电流,被认为在光电器件、太赫兹发射以及可能的太阳能收集方面具有广阔前景。因此,清晰理解位移电流机制并寻找具有大位移电流的材料具有极大的研究意义。ABC半导体LiZnX(X = N, P, As, Sb)可以稳定存在于立方和六方两种形态中,且都缺乏反演对称性,这为研究影响位移电流的重要因素(如结构和化学物种的作用)提供了理想平台。利用适当考虑电子带隙的密度泛函计算,发现LiZnX(X = P, As, Sb)中的位移电流电导率比已知的对应材料大约高一个数量级,并且峰值接近最大太阳辐射强度。值得注意的是,六方LiZnSb显示出约-75 μA/V²的峰值位移电流电导率和-20 × 10⁻⁸ cm/V的Glass系数,可与文献中预测的最高值相媲美。我们的比较分析揭示了位移电流响应与电子极化之间的定量关系。这些发现不仅将基于Li-Zn的ABC半导体定位为潜在应用的可行材料候选者,而且阐明了结构-BPVE关系的关键方面。

英文摘要:

The rectified bulk photovoltaic effect (BPVE) in noncentrosymmetric semiconductors, also called shift current, is considered promising for optoelectronic devices, terahertz emission and possibly solar energy harvesting. A clear understanding of the shift current mechanism and search for materials with large shift current is, therefore, of immense interest. $ABC$ semiconductors LiZn$X$ ($X$ = N, P, As, and Sb) can be stabilized in cubic as well as hexagonal morphologies lacking inversion symmetry$-$an ideal platform to investigate the significant contributing factors to shift current, such as the role of structure and chemical species. Using density-functional calculations properly accounting for the electronic bandgaps, the shift current conductivities in LiZn$X$ ($X$ = P, As, Sb) are found to be approximately an order of magnitude larger than the well-known counterparts and peak close to the maximum solar radiation intensity. Notably, hexagonal LiZnSb shows a peak shift current conductivity of $\sim -75 ~\rm{\rmμ}$A/V$^2$ and Glass coefficient of $ -20$ $\times$ 10$^{-8}$ cm/V, comparable to the highest predicted values in literature. Our comparative analysis reveals a quantitative relationship between the shift current response and the electronic polarization. These findings not only posit Li-Zn-based $ABC$ semiconductors as viable material candidates for potential applications but also elucidates key aspects of the structure-BPVE relationship.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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