WTe2范德华薄膜中的面外磁电阻
The out-of-plane magnetoresistance in a Van der Waals thin film of WTe2
AI总结：
本文通过测量WTe2范德华薄膜器件在面内和面外电流下的磁输运，发现面外磁电阻饱和且仅有一个Shubnikov-de Haas振荡峰，为理解未饱和磁电阻起源及自旋电子学非平面集成提供了新思路。
摘要：
我们报告了拓扑外尔半金属WTe2薄膜器件的磁输运测量，其中施加的电流沿面内方向以及垂直于面内方向。该器件由夹在顶部和底部Au电极之间的WTe2范德华薄膜组成。在低温下，当外部磁场垂直于平面施加时，我们发现了一个大的未饱和面内磁电阻和一个饱和的面外磁电阻。通过分析Shubnikov-de Haas振荡，在面外磁电阻中发现了一个振荡峰，与面内磁电阻中的四个振荡峰形成对比。我们的工作为WTe2中未饱和磁电阻的起源提供了新的见解，并可能启发非平面工程以实现自旋电子学中更高的集成度。
英文摘要：
We report the magneto-transport measurements of thin film devices of the topological Weyl semimetal WTe2 with the applied current along and vertical to the in-plane directions. The device is composed of a Van der Waals thin film of WTe2 sandwiched between top and bottom Au electrodes.At low temperatures, we found a large unsaturated in-plane magnetoresistance and a saturated out-of-plane magnetoresistance when the external magnetic fields are applied perpendicular to the plane. By analysis of Shubnikov-de Haas oscillations, one oscillation peak is found in the out-of-plane magnetoresistance, in contrast to four oscillation peaks in the in-plane magnetoresistance.Our work provides new insight into the origin of the unsaturated magnetoresistance in WTe2 and may inspire non-planar engineering to reach higher integration in spintronics.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
