单层CrSBr范德华异质结自旋维数的磁输运测量
Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements
摘要：
二维（2D）磁性材料为自旋电子学和磁振子学的基础物理和应用研究提供了前所未有的机会。除了对2D CrI 3和Cr2 Ge 2 Te 6的开创性研究之外，这一新兴领域已经扩展到表现出不同自旋各向异性和纹理的2D反铁磁体。特别令人感兴趣的是层状变磁体CrSBr，一种相对空气稳定的半导体，由反铁磁耦合铁磁层（Tc~150 K）形成，可以剥离到单层。它呈现出复杂的磁性行为，动态磁交叉导致低温隐序低于T*~40 K。在这里，我们检查的CrSBr垂直异质结构的磁输运性质在2D的限制。我们的研究结果表明，显着的低维特征的铁磁单层，与短程相关性高于Tc和伊辛型面内各向异性，自旋自发地沿易轴b低于Tc。通过沿a和c轴施加中等磁场，发生自旋重取向，导致T* 以下的磁阻增强。在多层膜中，观察到自旋阀的行为，与沿T* 以下的三个方向强烈增强的负磁阻。这些结果表明，CrSBr单层/双层提供了一个理想的平台，用于研究和控制场致现象在二维，提供了新的见解，关于二维磁铁和他们的集成到垂直自旋电子器件。
英文摘要：
Two-dimensional (2D) magnetic materials offer unprecedented opportunities for fundamental physics and applied research in spintronics and magnonics. Beyond the pioneering studies on 2D CrI3 and Cr2Ge2Te6, this emerging field has expanded to 2D antiferromagnets exhibiting different spin anisotropies and textures. Of particular interest is the layered metamagnet CrSBr, a relatively air-stable semiconductor formed by antiferromagnetically-coupled ferromagnetic layers (Tc~150 K) that can be exfoliated down to the single-layer. It presents a complex magnetic behavior with a dynamic magnetic crossover leading to a low-temperature hidden order below T*~40 K. Here, we inspect the magneto-transport properties of CrSBr vertical heterostructures in the 2D limit. Our results demonstrate the marked low-dimensional character of the ferromagnetic monolayer, with short-range correlations above Tc and an Ising-type in-plane anisotropy, being the spins spontaneously aligned along the easy-axis b below Tc. By applying moderate magnetic fields along a and c axes, a spin reorientation occurs, leading to a magnetoresistance enhancement below T*. In multilayers, a spin-valve behavior is observed, with negative magnetoresistance strongly enhanced along the three directions below T*. These results show that CrSBr monolayer/bilayer provides an ideal platform for studying and controlling field-induced phenomena in two-dimensions, offering new insights regarding 2D magnets and their integration into vertical spintronic devices.
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