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arXiv 2302.02044hep-exnucl-ex
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用于暗物质和CE$ν$NS的中子俘获诱导硅核反冲

Neutron capture-induced silicon nuclear recoils for dark matter and CE$ν$NS

K. Harris, A. Gevorgian, A. J. Biffl, A. N. Villano

AI总结:

针对暗物质探测与CE$ν$NS研究对低能核反冲本底及校准的需求,本文计算并给出了硅材料中子俘获后瞬发核反冲的能谱。

摘要:

材料中的中子俘获发生后,除γ级联外还会产生瞬发核反冲。这些留在材料中的核反冲通常低于1 keV,因此处于暗物质实验和CE$ν$NS研究关注的范围内——既可作为本底,也可作为校准机会。本文获得了硅中中子俘获后瞬发核反冲的能谱。

英文摘要:

Following neutron capture in a material there will be prompt nuclear recoils in addition to the gamma cascade. The nuclear recoils that are left behind in materials are generally below 1\,keV and therefore in the range of interest for dark matter experiments and CE$ν$NS studies--both as backgrounds and calibration opportunities. Here we obtain the spectrum of prompt nuclear recoils following neutron capture for silicon.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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