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arXiv 2206.13639physics.ins-dethep-ex
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用于暗物质搜索的核反冲的内禀Fano因子

Intrinsic Fano factor of nuclear recoils for dark matter searches

M. Matheny, A. Roberts, A. Srinivasan, A. N. Villano

摘要:

在10 ~ 200 keV的反冲能量范围内,锗和硅中的核反冲产生的电子-空穴比其对应的电子反冲产生的电子-空穴有更大的变化.这种效应--主要是由于给定能量的核反冲导致的晶格能量的偏差--已经被林哈德模型预测到了。我们用内禀核反冲Fano因子来参数化方差,在25 keV附近,硅和锗的内禀核反冲Fano因子分别为24.3 $\pm$ 0.2和26 $\pm$ 8。方差具有重要的影响,预期的信号形状的实验,利用低能量的核反冲,如直接暗物质搜索和相干中微子核散射测量。

英文摘要:

Nuclear recoils in germanium and silicon are shown to have much larger variance in electron-hole production than their electron-recoil counterparts for recoil energies between 10 and 200\,keV. This effect--owing primarily to deviations in the amount of energy given to the crystal lattice in response to a nuclear recoil of a given energy--has been predicted by the Lindhard model. We parameterize the variance in terms of an intrinsic nuclear recoil Fano factor which is 24.3$\pm$0.2 and 26$\pm$8 at around 25\,keV for silicon and germanium respectively. The variance has important effects on the expected signal shapes for experiments utilizing low-energy nuclear recoils such as direct dark matter searches and coherent neutrino-nucleus scattering measurements.

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