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arXiv 2301.09374physics.app-ph
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影响垂直型有机场效应晶体管性能的各种因素的模拟研究

Simulation study of various factors affecting the performance of Vertical Organic Field-Effect Transistors

Ramesh Singh Bisht, Pramod Kumar

摘要:

垂直场效应晶体管(VOFET)可以提供短沟道架构,这可以进一步增强在低操作电压下的性能,这使得它对于有机电子应用更可行。VOF4可以用低成本技术制备,这降低了高加工成本,并且还可以在高电流密度和相对较高的频率下操作。为了进一步提高性能,高电流密度和工作频率的物理载流子传输应该理解很好的模拟。VOFET的主要问题是高截止电流,这是由于从源极到漏极接触的传导而不可避免的。在通过在源极电极的顶部上添加绝缘层来减小关态电流方面已经进行了许多努力,这进一步增加了处理的复杂性和成本。基于器件的几何形状,接触势垒,和有机半导体参数的模拟进行了研究的载流子输运VOFET。模拟结果表明,提高性能的最重要的因素是器件的几何形状或架构,这需要一个特定的填充因子,暴露的栅极电介质之间的比率,和源极电极的总长度。优化的VOFET结构,然后模拟的接触势垒和半导体参数的变化,这表明一些性能的提高,但也在关态电流密度的上升。

英文摘要:

Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with low-cost techniques which reduce the high processing costs and can also operate at high current density and relatively higher frequencies. To further improve the performance, high current density, and operating frequency the physics of charge carrier transport should be understood well with the simulation. The main problem with VOFET is the high off-current which is inevitable due to conduction from source to drain contact. There have been many efforts in reducing the off-state current by the addition of an insulating layer on top of the source electrode, which further increases the complexity and cost of processing. Simulations based on device geometry, contact barriers, and organic semiconductor parameters are carried out to study the charge carrier transport in VOFET. The simulation results show that the most important factor to enhance the performance is the device geometry or architecture, which requires a specific fill factor, a ratio between the exposed gate dielectric, and the total length with the source electrode. Optimized VOFET architecture is then simulated for variation in contact barrier and semiconductor parameters, which show some enhancement in performance but also a rise in off-state current density.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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