Realization of Ohmic-contact and velocity saturation in organic field-effect transistors by crystallized monolayer

Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors

Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based transistors in terms of physical accuracy and computational efficiency to support large-scale integrated circuit design. One remaining critical obstacle is the contacts of 2DM-FETs. In order to self-consistently include the contact effect in the current model, it is necessary to perform self-consistent calculations, which is a fatal flaw for applications that priorit…

130 mA/mm $β$-Ga$_2$O$_3$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts

We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown $β$-Ga$_2$O$_3$ metal-semiconductor field effect transistor (MESFET). The low-temperature (600$^{\circ}$C) heavy (n$^{+}$) Si-doped regrown layers exhibit extremely high conductivity with sheet resistance of 73 $Ω$/$\square$ and record low metal/n$^{+}$-Ga$_2$O$_3$ contact resistance of 80 m$Ω$.mm and specific contact resistivity of 8.3$\times$10$^{-7}$ $Ω$.cm$^{2}$ were achieved. The fabricated MESFETs exhibit a maximum drain-to-source current of 130 mA/mm, a high I$_{ON}$/I…

利用Janus MoSSe表面极化设计互补金属-氧化物-半导体场效应晶体管

Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors

本研究利用Janus过渡金属二硫族化合物MoSSe的面外本征偶极特性，通过理论计算与器件仿真，设计出无需额外掺杂即可在同一层制备的n型和p型互补MOSFETs，为新型二维器件设计提供了新思路。

Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage shows the tunability of FET characteristics. The Schottky barrier …

低温下2DFETs增强的非欧姆漏极电阻

Enhanced Non-Ohmic Drain Resistance of 2DFETs at Cryogenic Temperature

本研究发现2DFETs在低温下漏电流从欧姆转为非欧姆行为，源于金属-半导体接触处的不对称电流减小，揭示了低温接触物理机制及金属选择的重要性。

用于横向异质结MoS₂场效应晶体管的CVD石墨烯接触

CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors

针对二维材料晶体管欧姆接触制备难的问题，研究人员制备了CVD二硫化钼与CVD石墨烯的横向异质结晶体管，实现低接触电阻与高开关比，并通过经实验校准的理论模型验证了其进一步缩放与性能提升的潜力。