低温下2DFETs增强的非欧姆漏极电阻
Enhanced Non-Ohmic Drain Resistance of 2DFETs at Cryogenic Temperature
AI总结：
本研究发现2DFETs在低温下漏电流从欧姆转为非欧姆行为，源于金属-半导体接触处的不对称电流减小，揭示了低温接触物理机制及金属选择的重要性。
摘要：
近年来，基于二维（2D）材料的场效应晶体管（FETs）的接触问题引起了极大关注。尽管在室温下实现了欧姆行为，但2DFETs的漏电流在低温下从欧姆行为转变为非欧姆行为。在本工作中，我们证明这种转变归因于低温下金属-半导体接触处的不对称电流减小。在低漏极偏压下，载流子从源极隧穿到沟道，但由于沟道到漏极的势垒而扩散到漏极侧，导致电流抑制。通过研究不同温度下欧姆金属-半导体接触的特性，我们分析了这一现象背后的机制及其对金属-半导体势垒高度的依赖性。该工作开启了低温下2D材料接触的半导体物理学，以及低温2DFET发展中接触金属选择的重要性。
英文摘要：
The contact issue for two-dimensional (2D) materials-based field-effect transistors (FETs) has drawn enormous attention in recent years. Although ohmic behavior is achieved at room temperature, the drain current of 2DFETs shifts from ohmic to non-ohmic behavior at cryogenic temperatures. In this work, we demonstrate that the shift is attributed to the asymmetric current reduction at the metal-semiconductor contact at low temperature. Under low drain bias, carriers tunnel from the source to the channel but diffuse to the drain side due to the channel-to-drain barrier, resulting in the current suppression. By studying the property of ohmic metal-semiconductor contact at different temperatures, we analyzed the mechanisms behind this phenomenon and the dependence on metal-to-semiconductor barrier height. The work opens the semiconductor physics of 2D material contact at cryogenic temperature and the importance of contact metal selection in the development of 2DFET at cryogenic temperature.
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