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arXiv 2212.04670quant-phphysics.optics
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通过印章转移技术实现GaP光子晶体腔与金刚石中硅空位中心的混合集成

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Srivatsa Chakravarthi, Nicholas S. Yama, Alex Abulnaga, Ding Huang, Christian Pederson, Karine Hestroffer, Fariba Hatami, Nathalie P. de Leon, Kai-Mei C. Fu

AI总结:

本文提出利用印章转移技术将磷化镓光子晶体腔与金刚石中硅空位中心集成,避免了金刚石刻蚀,实现了高达8900的腔品质因子和单缺陷共振激发,为量子网络提供了强光子-缺陷相互作用平台。

摘要:

光学可寻址的固态缺陷正成为量子网络中最具前景的量子比特平台之一。通过纳米光子腔耦合最大化光子-缺陷相互作用是提升网络效率的关键。我们展示了在氧化硅载体上制备磷化镓一维光子晶体波导腔,并随后使用印章转移技术将其与金刚石中注入的硅空位中心进行集成。该印章工艺避免了金刚石刻蚀,并允许在集成前对腔进行微调。转移到金刚石后,我们测量到腔的品质因子(Q)高达8900,并对耦合到这些腔的单个SiV中心进行共振激发。对于Q为4100的腔,我们观察到共振时寿命缩短至三分之一,对应最大潜在协同度为C=2。这些结果表明,在避免制备量子缺陷宿主晶体的情况下,该平台有望实现强光子-缺陷相互作用。

英文摘要:

Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors ($Q$) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with $Q$ of 4100, we observe a three-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of $C = 2$. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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