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arXiv 2211.01005cond-mat.mes-hall
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双层石墨烯莫尔超晶格中的Umklapp电子-电子散射

Umklapp electron-electron scattering in bilayer graphene moiré superlattice

Christian Moulsdale, Vladimir Fal'ko

AI总结:

该研究预测与hBN对齐的双层石墨烯莫尔超晶格中,Umklapp电子-电子散射导致$T^2$依赖电阻率,其强度受掺杂密度、扭转角和带隙影响。

摘要:

最近的实验进展以在石墨烯和六方氮化硼(hBN)高度对齐异质结构中的莫尔超晶格中观测到弹道电子输运为标志。在此,我们预测,与hBN衬底对齐的高质量石墨烯双层表现出由莫尔超晶格引起的Umklapp电子-电子(Uee)散射导致的$T^2$依赖性电阻率,即一对电子经历布拉格散射所获得的动量冲击。当双层被$p$掺杂超过阈值密度时,显著的Uee散射出现,该阈值密度取决于石墨烯与hBN之间的扭转角,其对电阻率的贡献随空穴密度迅速增长直至达到峰值,该峰值的幅度随超晶格周期非单调变化。我们还分析了双层中静电诱导带隙及其在电子色散中增强的三角翘曲对电子-电子Umklapp散射的影响。

英文摘要:

Recent experimental advances have been marked by the observations of ballistic electron transport in moiré superlattices in highly aligned heterostructures of graphene and hexagonal boron nitride (hBN). Here, we predict that a high-quality graphene bilayer aligned with an hBN substrate features $T^2$-dependent resistivity caused by umklapp electron-electron (Uee) scattering from the moiré superlattice, that is, a momentum kick by Bragg scattering experienced by a pair of electrons. Substantial Uee scattering appears upon $p$-doping of the bilayer above a threshold density, which depends on the twist angle between graphene and hBN, and its contribution towards the resistivity grows rapidly with hole density until it reaches a peak value, whose amplitude changes non-monotonically with the superlattice period. We also analyse the influence of an electrostatically induced bandgap in the bilayer and trigonal warping it enhances in the electron dispersion on the electron-electron umklapp scattering.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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