We consider a superlattice of parallel metal tunnel junctions with a spatially non-homogeneous probability for electrons to tunnel. In such structures tunneling can be accompanied by electron scattering that conserves energy but not momentum. In the special case of a tunneling probability that varies periodically with period $a$ in the longitudinal direction, i.e., perpendicular to the junctions, electron tunneling is accompanied by "umklapp" scattering, where the longitudinal momentum changes by a multiple of $h/a$. We predict that as a result a sequence of metal-insulator transitions can be induced by an external electric- or magnetic field as the field strength is increased.
Umklapp processes play a fundamental role as the only intrinsic mechanism that allows electrons to transfer momentum to the crystal lattice and, therefore, provide a finite electrical resistance in pure metals. However, umklapp scattering has proven to be elusive in experiment as it is easily obscured by other dissipation mechanisms. Here we show that electron-electron umklapp scattering dominates the transport properties of graphene-on-boron-nitride superlattices over a wide range of temperatures and carrier densities. The umklapp processes cause giant excess resistivity that rapidly increase…
We argue that the unusually strong electron-electron interactions in the narrow bands in moiré superlattices originate from compact Wannier orbitals. Enhanced overlaps of electronic wavefunctions, enabled by such orbitals, result in a strong el-el superlattice umklapp scattering. We identify the umklapp scattering processes as a source of the strong temperature-dependent resistivity observed in these systems. In a simple model, the umklapp scattering predicts a $T$-dependent resistivity that grows as $T^2$ and is getting bigger as the Wannier orbital radius decreases. We quantify the enhanceme…
Carrier relaxation measurements in moiré materials offer a unique probe of the microscopic interactions, in particular the ones that are not easily measured by transport. Umklapp scattering between phonons is a ubiquitous momentum-nonconserving process that governs the thermal conductivity of semiconductors and insulators. In contrast, Umklapp scattering between electrons and phonons has not been demonstrated experimentally. Here, we study the cooling of hot electrons in moiré graphene using time- and frequency-resolved photovoltage measurements as a direct probe of its complex energy pathways…
Thermal conductivity of GeTe/Sb$_{2}$Te$_{3}$ superlattices measured by coherent phonon spectroscopy
利用飞秒相干声子谱研究了GeTe/Sb $_{2}$ Te $_{3}$超晶格的晶格热导率。在非晶和晶态GeTe/$_{2}$ SL薄膜中获得的时间分辨瞬态反射率在太赫兹（THz）频率下具有皮秒退相时间的相干$A_{1}$光学模式。基于德拜理论，我们计算了晶格热导率，包括晶界散射、点缺陷散射、umklapp过程和声子共振散射。结果表明，在非晶SL的热导率是较小的温度依赖性，归因于占主导地位的声子缺陷散射。
Geometrical moiré patterns, generic for almost aligned bilayers of two-dimensional (2D) crystals with similar lattice structure but slightly different lattice constants, lead to zone folding and miniband formation for electronic states. Here, we show that moiré superlattice (mSL) effects in $\mathrm{MoSe}_2/\mathrm{WS}_2$ and $\mathrm{MoTe}_2/\mathrm{MoSe}_2$ heterobilayers that feature alignment of the band edges are enhanced by resonant interlayer hybridization, and anticipate similar features in twisted homobilayers of TMDs, including examples of narrow minibands close to the actual band ed…
In graphene moiré superlattices, electronic interactions between layers are mostly hidden as band structures get crowded because of folding, making their interpretation cumbersome. Here, the evolution of the electronic band structure as a function of the interlayer rotation angle is studied using Density Functional Theory followed by unfolding bands and then comparing them to their corresponding individual components. We observe interactions at regions not theoretically elucidated so far, where for small interlayer angles, gaps turn into discrete-like states that are evenly spaced in energy. W…
Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions' strength. One possible approach is to place a studied system in proximity of a metal, which induces additional screening and hence suppresses electron interactions. Here, using devices with atomically-thin gate dielectrics and atomically-flat metallic gates, we measure the electron-electron scattering length in graphene and report qualitative deviations from the standard behavior. The changes induced by screening become important…
