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arXiv 0905.2062cond-mat.mes-hall
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低温弱耦合超晶格中的量子输运

Quantum transport in weakly coupled superlattices at low temperature

E. Lhuillier, I. Ribet-Mohamed, A. Nedelcu, V. Berger, E. Rosencher

摘要:

本文报道了在低温下外加电场作用下,弱耦合超晶格(SL)结构中电流的研究。这种低温输运的特征在于相邻阱之间极低的隧穿概率。在实验上,低温下的I(V)曲线显示出一个显著的特征,即微分电导的平台或零。一个理论模型的基础上的散射率的评估,以了解这种行为,探索不同的散射机制在AlGaAs合金。在通常的实验条件下,如我们的主要相互作用被发现是电子电离的施主散射。I(V)特性曲线中平台的存在可以用弱耦合量子阱中Wannier-Stark电子态的电场局域化与相邻阱间电场辅助隧穿之间的竞争来物理解释。的掺杂浓度和分布的影响,以及存在的杂质内的障碍进行了讨论。

英文摘要:

We report on the study of the electrical current flowing in weakly coupled superlattice (SL) structures under an applied electric field at very low temperature, i.e. in the tunneling regime. This low temperature transport is characterized by an extremely low tunneling probability between adjacent wells. Experimentally, I(V) curves at low temperature display a striking feature, i.e a plateau or null differential conductance. A theoretical model based on the evaluation of scattering rates is developed in order to understand this behaviour, exploring the different scattering mechanisms in AlGaAs alloys. The dominant interaction in usual experimental conditions such as ours is found to be the electron-ionized donors scattering. The existence of the plateau in the I(V) characteristics is physically explained by a competition between the electric field localization of the Wannier-Stark electron states in the weakly coupled quantum wells and the electric field assisted tunneling between adjacent wells. The influence of the doping concentration and profile as well as the presence of impurities inside the barrier are discussed.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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