Tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moiré superlattices
State Key Laboratory of Micro-nano Engineering Science, Tsung-Dao Lee lnstitute & School of Physics and Astronomy, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shanghai Jiao Tong University（上海交通大学微纳电子工程科学国家重点实验室、李政道研究所及物理与天文学院人工结构与量子控制教育部重点实验室）；Department of Physics, City University of Hong Kong（香港城市大学物理系）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（国家材料研究所电子与光学材料研究中心）；Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（国家材料研究所材料纳米结构研究中心）；Hefei National Laboratory（合肥国家实验室）；Shanghai Research Center for Quantum Sciences（上海量子科学研究中心）；Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong)（粤港澳大湾区量子科学中心（广东））；Department of Physics, Southern University of Science and Technology（南方科技大学物理系）；Department of Physics, Hong Kong University of Science and Technology（香港科技大学物理系）
Moiré superlattices based on rhombohedral multilayer graphene have emerged as a highly tunable platform for engineering correlated topological phases. Here, we systematically investigate the transport properties of the hole-doped side in rhombohedral tetralayer graphene/ hexagonal boron nitride (hBN) moiré superlattices across a range of twist angles and alignment orientations. Notably, we observed multiple high-Chern-number Chern insulators, including the previously reported integer Chern insulator with Chern number C = -4 at moiré filling factor v = -1 and newly discovered symmetry-broken Chern insulating states with C = +3, $\pm$2, $\pm$1 at fractional moiré fillings of v = -2.5 or -2.6. These Chern insulating states emerge in both hBN alignment, but exhibit a sensitive moiré wavelength dependence. Our findings demonstrate the exceptional tunability of these high-Chern-number states via moiré wavelength, displacement electric field and external magnetic field, underscoring the distinct topological landscape realized in hole-doped RTG/hBN moiré superlattices.
Real-space study of zero-field correlation in tetralayer rhombohedral graphene
Tsung-Dao Lee Institute, Shanghai Jiao Tong University（上海交大李政道研究所）；Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University（上海交通大学物理与天文学院人工结构与量子控制教育部重点实验室）；School of Physical Science and Technology, ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University（上海科技大学物质科学与技术学院拓扑物理实验室）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（日本国立材料研究所电子光学材料研究中心）；Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（日本国立材料研究所材料纳米构筑研究中心）；Hefei National Laboratory（合肥国家实验室）
Fermiology and the Candidate Chiral Superconductor in Rhombohedral Tetralayer Graphene
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory（斯坦福材料能源科学研究所，SLAC国家加速器实验室）；Department of Physics, Stanford University（斯坦福大学物理系）；Princeton University（普林斯顿大学）；Department of Materials Science and Engineering, Stanford University（斯坦福大学材料科学与工程系）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（日本国立物质材料研究所电子与光学材料研究中心）；Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（日本国立物质材料研究所材料纳米架构研究中心）
Visualizing flat-band spatial renormalization in rhombohedral graphene superlattices
Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University（教育部微纳光电器件重点实验室与湖南省低维结构物理及器件重点实验室，湖南大学物理与电子学院）；Yuelushan Center for Industrial Innovation（岳麓山工业创新中心）；College of Semiconductors (College of Integrated Circuits), Hunan University（湖南大学半导体学院（集成电路学院））；College of Physics and Hebei Advanced Thin Films Laboratory, Hebei Normal University（河北师范大学物理学院与河北省先进薄膜材料实验室）
Entangled Moire Chern Insulator in Rhombohedral Graphene
Peking University（北京大学）；National Institute of Material Sciences（国立材料研究所）；Collaborative Innovation Center of Quantum Matter（量子物质协同创新中心）；Hefei National Laboratory（合肥国家实验室）
Moiré Fractional Chern Insulators III: Hartree-Fock Phase Diagram, Magic Angle Regime for Chern Insulator States, the Role of the Moiré Potential and Goldstone Gaps in Rhombohedral Graphene Superlattices
The "Moiré Capacitor Effect" and Stabilization of Fractional Chern Insulators in Rhombohedral Graphene Superlattices
Center for Computational Quantum Physics, Flatiron Institute（Flatiron研究所计算量子物理中心）；Laboratoire de Physique de l’Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité（巴黎高等师范学院物理实验室，ENS，PSL大学，CNRS，索邦大学，巴黎第七大学，索邦巴黎城）；Department of Physics, Princeton University（普林斯顿大学物理系）；Donostia International Physics Center（圣塞巴斯蒂安国际物理中心）；Princeton Center for Theoretical Science, Princeton University（普林斯顿大学理论科学中心）；Department of Physics, University of Texas at Dallas（德克萨斯大学达拉斯分校物理系）；IKERBASQUE, Basque Foundation for Science（伊卡巴斯基克，巴斯克科学基金会）；Department of Physics, Massachusetts Institute of Technology（麻省理工学院物理系）
Competing Chern states revealed by quasiparticle charging in moiré rhombohedral graphene
Cornell University（康奈尔大学）；Max Planck Institute for the Structure and Dynamics of Matter（马克斯·普朗克物质结构与动力学研究所）；Massachusetts Institute of Technology（麻省理工学院）；Florida State University（佛罗里达州立大学）；National Institute for Materials Science（国立材料研究所）
Observation of Kondo Effect in Rhombohedral Graphene Superlattices
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University（北京大学物理学院介观物理国家重点实验室和纳米光电前沿科学中心）；Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology（北京理工大学物理学院量子物理中心、先进光电子量子架构与测量教育部重点实验室）；Research Center for Electronic and Optical Materials, National Institute for Material Sciences（物质材料研究机构电子与光学材料研究中心）；Research Center for Materials Nanoarchitectonics, National Institute for Material Sciences（物质材料研究机构材料纳米结构研究中心）；Hefei National Laboratory（合肥国家实验室）
Quantum Phase Transitions and Fractional Quantized Anomalous Hall Insulators in Rhombohedral Graphene
Massachusetts Institute of Technology（麻省理工学院）；Weizmann Institute of Science（魏茨曼科学研究所）；Florida State University（佛罗里达州立大学）；National Institute for Materials Science（国立材料研究所）
Fractional High-Chern Insulator in Twisted Rhombohedral Graphene
International Center for Quantum Materials, School of Physics, Peking University（北京大学物理学院量子材料国际中心）；State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University（北京大学物理学院介观物理国家重点实验室纳米光电子前沿科学中心）；Research Center for Electronic and Optical Materials, National Institute of Material Sciences（物质材料研究机构电子光学材料研究中心）；Research Center for Materials Nanoarchitectonics, National Institute of Material Sciences（物质材料研究机构材料纳米构造研究中心）；Interdisciplinary Center for Theoretical Physics and Information Sciences, Fudan University（复旦大学理论物理与信息科学交叉中心）；Hefei National Laboratory（合肥国家实验室）；Collaborative Innovation Center of Quantum Matter（量子物质协同创新中心）
Multiple Superconducting Phases in Rhombohedral Heptalayer Graphene
State Key Laboratory of Micro-nano Engineering Science, Tsung-Dao Lee lnstitute & School of Physics and Astronomy, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shanghai Jiao Tong University（上海交通大学微纳电子学系、李政道理论与研究学院、人工结构量子控制教育部重点实验室）；National Institute for Materials Science（国立材料研究所）；Hefei National Laboratory（合肥国家实验室）；Shanghai Research Center for Quantum Sciences（上海量子科学研究中心）；Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong)（粤港澳大湾区（广东）量子科学中心）；Department of Physics, Southern University of Science and Technology（南方科技大学物理系）
Charge imprinting biases topology of correlated insulator in hBN-aligned rhombohedral multilayer graphene
University of Chinese Academy of Sciences（中国科学院大学）；Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences（中国科学院理论科学 kavli 研究所）；ShanghaiTech University（上海科技大学）；Liaoning Academy of Materials（辽宁省材料研究院）
Anomalous Hall Crystals in Rhombohedral Multilayer Graphene I: Interaction-Driven Chern Bands and Fractional Quantum Hall States at Zero Magnetic Field
